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GB/T 11073-2007: Standard method for measuring radial resistivity variation on silicon slices
Status: Valid GB/T 11073: Evolution and historical versions
| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 11073-2007 | English | 369 |
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Standard method for measuring radial resistivity variation on silicon slices
| Valid |
GB/T 11073-2007
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| GB/T 11073-1989 | English | 559 |
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Standard method for measuring radial resistivity variation on silicon slices
| Obsolete |
GB/T 11073-1989
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PDF similar to GB/T 11073-2007
Basic data | Standard ID | GB/T 11073-2007 (GB/T11073-2007) | | Description (Translated English) | Standard method for measuring radial resistivity variation on silicon slices | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H17 | | Classification of International Standard | 77.040.01 | | Word Count Estimation | 14,162 | | Date of Issue | 2007-09-11 | | Date of Implementation | 2008-02-01 | | Older Standard (superseded by this standard) | GB/T 11073-1989 | | Adopted Standard | ASTM F81-2001, MOD | | Regulation (derived from) | China National Standard Approval Announcement2007 No.11 (Total No.111) | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This standard specifies the radial resistivity Si wafers measuring changes in the four -probe method with a straight row method. This standard applies to the average thickness is less than the probe spacing, diameter greater than 15 mm, resistivity of 1X10-3�� �� cm ~ 3 �� 103 �� �� cm silicon single crystal wafer measuring radial resistivity change. | GB/T 11073-2007: Standard method for measuring radial resistivity variation on silicon slices---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Standard method for measuring radial resistivity variation on silicon slices
ICS 77.040.01
H17
National Standards of People's Republic of China
Replacing GB/T 11073-1989
Methods of measurement of radial resistivity variation on silicon
Posted 2007-09-11
2008-02-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
This standard is GB/T 11073-1989 "Methods of measurement of radial resistivity variation on silicon" amendment. This revised standard adopts
ASTMF81-01 "Methods of measurement of radial resistivity variation on silicon."
This standard is consistent with the degree of modification ASTMF81-01 use, the main differences are as follows.
--- Deleted ASTMF81-01 Chapter 4, "meaning and purpose."
This standard compared with GB/T 11073-1989 main changes are as follows.
--- By GB/T 6615 has been incorporated into the GB/T 1552, this standard will be revised at the time of wafer resistivity test method standards to
GB/T 1552, and Chapter 2, "Normative references" in the "GB/T 6615" to "GB/T 1552";
--- A method of calculating the "Calculation" in Chapter 8 of ASTMF81-01 replace the original GB 11073-1989 radial resistivity change
Calculation method;
--- According to GB/T 1552 to measure the resistivity of the upper limit from 1 × 103Ω · cm to 3 × 103Ω · cm;
--- Original GB/T 11073-1989 in Chapter 7, "measurement error" to Chapter 4, "noise", and subsequent chapter by chapter number for
Adjusted accordingly;
--- Deleted the original GB/T 11073-1989 in Table 1, with a diameter deviation GB/T 12965 stipulated;
--- Original GB/T 11073-1989 Table 2 to Table 1, and according to GB/T 12965 provisions, deleting this standard
Nominal diameters 80.0mm, 150.0mm and 200.0mm increase the nominal diameter specifications.
Appendix A of this standard is a normative appendix.
From the date of implementation of this standard, but instead of GB/T 11073-1989.
The standard proposed by China Nonferrous Metals Industry Association.
This standard by the National Standardization Technical Committee materials and equipment at the Technical Committee of semiconductor material.
This standard was drafted. Emei Semiconductor Material Factory.
The main drafters of this standard. Liang Hong, Qinrui Bing, Wang Yan.
This standard replaces the standards previously issued as follows.
--- GB/T 11073-1989.
Methods of measurement of radial resistivity variation on silicon
1 Scope
This standard specifies the Si wafers measuring radial resistivity variation on the straight row four-probe method.
This standard applies to a thickness less than the mean distance between the probe, diameter greater than 15mm, resistivity of 1 × 10-3Ω · cm ~ 3 × 103Ω · cm
A silicon single crystal wafer radial change in resistivity measurements.
2 Normative references
The following documents contain provisions which, through reference in this standard and become the standard terms. For dated references, subsequent
Amendments (not including errata content) or revisions do not apply to this standard, however, encourage the parties to the agreement are based on research
Whether the latest versions of these documents. For undated reference documents, the latest versions apply to this standard.
GB/T 1552 silicon germanium crystal measuring resistivity inline four-probe method
GB/T 2828 (all parts) Sampling procedures for inspection
GB/T 6618-1995 wafer thickness and total thickness variation of test methods
GB/T 12965 monocrystalline silicon cutting discs and grinding sheet
3 Method summary
Select one of four selected according to the requirements of the program in one point, according to GB/T 1552 method measured and calculated using the geometric correction factor
A wafer radial resistivity and resistivity change.
This standard provides four measurement points selected program. Different programs can be measured at selected points at different radial resistivity variation value.
4 confounding factors
When the four-probe spacing of less than 4.1 or measured distance between the probe sample the high life in this standard should be used to find the appropriate current range of resistivity
measuring.
4.2 local variations in dopant concentrations can cause resistivity along the growth direction of the crystal changes, and four-point probe resistivity measurements are local level
Mean, effects of sample longitudinal resistivity change this value by; so may result in different measuring resistivity changes in wafer front and back.
Magnitude of this effect is also associated with the probe spacing.
4.3 When the probe is located near the edge of the wafer on the measured voltage and current ratio has a significant impact. According to the voltage and current ratio and geometry repair
Positive factors to calculate the local resistivity. Appendix A Section A. Chapter 2 provides a probe spacing of 1.59mm, the measurement point is moved to the edge of the wafer
Local resistivity when the error amount 0.15mm. Different sizes of silicon and measuring point, with the decrease of the amount of these errors probe spacing
Decreases.
4.4 and the geometry of the silicon-related errors.
4.4.1 measurement or in the case of silicon on the back and around the conductive measurement will produce an error near the wafer surface position of the reference.
4.4.2 does not calculate the correction factor according to the actual diameter of the wafer, the error will increase the geometric correction factor. When measured from the edge of the probe
6mm above, the use of nominal diameter error caused negligible.
4.4.3 wafer thickness directly affects the measured resistivity. When the maximum local thickness variation of silicon is GB/T 12965 or allowed
When 13μm, Appendix A, Section A. Chapter 2 gives a margin of error of local resistivity. To accurately measure the local resistivity, measure
The thickness of each measurement location and calculating the resistivity of the position, or change in thickness of wafers small, or the use of thicker silicon.
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