SJ/T 11493-2015 PDF English
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| SJ/T 11493-2015 | English | 479 | Add to Cart | 3 days [Need to translate] | Test method for measuring nitrogen concentration in silicon substrates by secondary ion mass spectrometry |
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Basic data
| Standard ID | SJ/T 11493-2015 (SJ/T11493-2015) |
| Description (Translated English) | Test method for measuring nitrogen concentration in silicon substrates by secondary ion mass spectrometry |
| Sector / Industry | Electronics Industry Standard (Recommended) |
| Classification of Chinese Standard | H82 |
| Classification of International Standard | 29.045 |
| Word Count Estimation | 12,10 |
| Date of Issue | 2015-04-30 |
| Date of Implementation | 2015-10-01 |
| Quoted Standard | GB/T 24580-2009 |
| Regulation (derived from) | Ministry of Industry and Information Technology Announcement (2015 No. 28) |
| Issuing agency(ies) | Ministry of Industry and Information Technology |
| Summary | This Standard specifies the secondary ion mass spectrometry (SIMS) test method for single crystal silicon substrate material, the total concentration of nitrogen. This Standard applies to antimony, arsenic, phosphorus doping concentration <0.2% (1 �� 1020at.cm-3) a single product sample, wherein the concentration of nitrogen is not less than 1 �� 1014at.cm-3. |