SJ 20858-2002 PDF English
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Basic data
| Standard ID | SJ 20858-2002 (SJ20858-2002) |
| Description (Translated English) | Measuring methods for electrical parameters of silicon carbide single crystal material |
| Sector / Industry | Electronics Industry Standard |
| Classification of Chinese Standard | H82 |
| Word Count Estimation | 9,989 |
| Date of Issue | 2002-12-12 |
| Date of Implementation | 2003-05-01 |
| Summary | This standard specifies the silicon carbide single crystal material resistivity, Hall mobility testing methods. This standard applies to the temperature at 20 �� ~ 700 �� range of 4H-SiC, 6H-SiC single crystal materials such as low-resistivity silicon carbide resistivity, Hall mobility measurements. |