SJ 20858-2002 English PDF

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SJ 20858-2002: Measuring methods for electrical parameters of silicon carbide single crystal material
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
SJ 20858-2002	289	Add to Cart	3 days	Measuring methods for electrical parameters of silicon carbide single crystal material	Valid

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Basic data

Standard ID: SJ 20858-2002 (SJ20858-2002)
Description (Translated English): Measuring methods for electrical parameters of silicon carbide single crystal material
Sector / Industry: Electronics Industry Standard
Classification of Chinese Standard: H82
Word Count Estimation: 9,933
Date of Issue: 2002-12-12
Date of Implementation: 2003-05-01
Summary: This standard specifies the silicon carbide single crystal material resistivity, Hall mobility testing methods. This standard applies to the temperature at 20 �� ~ 700 �� range of 4H-SiC, 6H-SiC single crystal materials such as low-resistivity silicon carbide resistivity, Hall mobility measurements.

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