SJ 20177-1992 English PDF

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SJ 20177-1992: Semiconductor discrete device Detail specification for NPN silicon low-power switching transistor for type 3CK3634~3CK3637

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SJ 20177-1992	559	Add to Cart	3 days	Semiconductor discrete device Detail specification for NPN silicon low-power switching transistor for type 3CK3634~3CK3637

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Basic data

Standard ID: SJ 20177-1992 (SJ20177-1992)
Description (Translated English): Semiconductor discrete device Detail specification for NPN silicon low-power switching transistor for type 3CK3634~3CK3637
Sector / Industry: Electronics Industry Standard
Classification of Chinese Standard: L40
Word Count Estimation: 16,152
Date of Issue: 11/19/1992
Date of Implementation: 5/1/1993
Quoted Standard: GB 4587-84; GB 7581-87; GJB 33-85; GJB 128-86
Summary: This standard specifies the detailed requirements 3CK3634 ~ 3CK3637 silicon NPN low power switching transistor. This kind of device according to GJB 33 "total discrete semiconductor devices" requirement to provide three levels of product assurance (GP, GT and GCT level).

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