SJ 20176-1992 PDF English
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Basic data
| Standard ID | SJ 20176-1992 (SJ20176-1992) |
| Description (Translated English) | Semiconductor discrete device Detail specification for NPN silicon low-power high-reverse-voltage transistor of types 3DG3499 and 3DG3440 |
| Sector / Industry | Electronics Industry Standard |
| Classification of Chinese Standard | L40 |
| Word Count Estimation | 13,199 |
| Date of Issue | 11/19/1992 |
| Date of Implementation | 5/1/1993 |
| Quoted Standard | GB 4587-84; GB 7581-87; GJB 33-85; GJB 128-86 |
| Summary | This standard specifies the detailed requirements 3DG3439 type and 3DG3440 low power silicon NPN transistor high back pressure. This kind of device according to GJB 33 "total discrete semiconductor devices" requirement to provide three levels of product assurance (GP, GT and GCT level). |