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| Standard ID | GB/T 4937.28-2026 (GB/T4937.28-2026) |
| Description (Translated English) | Semiconductor devices - Mechanical and climate test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level |
| Sector / Industry | National Standard (Recommended) |
| Classification of Chinese Standard | L40 |
| Classification of International Standard | 31.080.01 |
| Word Count Estimation | 46,420 |
| Date of Issue | 2026-02-27 |
| Date of Implementation | 2026-09-01 |
| Issuing agency(ies) | State Administration for Market Regulation, Standardization Administration of China |
GB/T 4937.28-2026: Semiconductor devices - Mechanical and climate test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level
---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 31.080.01
CCSL40
National Standards of the People's Republic of China
Mechanical and Climate Testing Methods for Semiconductor Devices
Part 28.Electrostatic Discharge (ESD) Sensitivity Testing
Charged Device Model (CDM) Device Level
(IEC 60749-28.2022, IDT)
Published on 2026-02-27
Implemented on 2026-09-01
State Administration for Market Regulation
The State Administration for Standardization issued a statement.
Table of contents
Preface III
Introduction V
1.Scope 1
2 Normative References 1
3.Terms and Definitions 1
4.Required equipment 2
4.1 CDMESD testing equipment 2
4.2 Waveform Measurement Equipment 3
4.3 Verification Module (Metal Disc) 4
4.4 Capacitance meter 4
4.5 Ohmmeter 4
5.Requirements for periodic calibration of testing equipment, waveform recording, and waveform verification.
5.1 General Requirements for CDM Testing Equipment Evaluation 4
5.2 Waveform Acquisition Hardware 4
5.3 Waveform Acquisition Settings 4
5.4 Waveform Acquisition Program 4
5.5 Verification/Re-verification Procedure for CDM Test Equipment
5.6 Quarterly and Regular Waveform Verification Procedures for CDM Test Equipment 6
5.7 Waveform Characteristics 6
5.8 Archive 8
5.9 Evaluation procedure for full device charge using CDM testing equipment 8
6 CDMESD Testing Requirements and Procedures 9
6.1 Preparation of Test Equipment and Devices 9
6.2 Test Requirements 9
6.3 Stress Testing Procedure 9
6.4 CDM Test Record/Report Guidelines 10
6.5 Testing of Small Package Devices 10
7 CDM Classification Standards 10
Appendix A (Normative) Specifications for Validation Modules (Metal Discs) and Cleaning Guidelines for Validation Modules and Test Equipment 11
A.1 Test equipment verification module and field board medium 11
A.2 Maintenance of the verification module 11
Appendix B (Normative) Capacitance Measurement of Verification Module (Metal Disc) on Dielectric of Test Equipment 12
Appendix C (Normative) Testing of Small Package Integrated Circuits and Discrete Semiconductor Devices (ICDS) 13
C.1 Test Principle 13
C.2 Determine the procedure for CSmal 13
C.3 ICDS Process Requirements 14
Appendix D (Informative) Improvements to CDM Testing Hardware and Metrology 15
Appendix E (Informative) Electrical Schematic Diagram of CDM Test Equipment 16
Appendix F (Informative) Oscilloscope Settings and Waveform Examples 17
F.1 Overview 17
F.2 1GHz bandwidth oscilloscope setting 17
F.3 High Bandwidth Oscilloscope Settings 17
F.4 Configuration 17
F.5 1GHz Oscilloscope Waveform Example 17
F.6 8GHz Oscilloscope Waveform Example 18
Appendix G (Informative) Discharge Procedure for Field Induction CDM Test Equipment 20
G.1 Overview 20
G.2 Single Discharge Procedure 20
G.3 Double Discharge Program 20
Appendix H (Informative) Waveform Verification Procedure 22
H.1 Factor/Offset Adjustment Method 22
H.2 Software Voltage Adjustment Method 25
H.3 Parameter Record Representation Example 27
Appendix I (Informative) Determining the Appropriate Charging Delay for Fully Charging Large Modules or Devices 29
I.1 Overview 29
I.2 Procedure for Determining Charging Delay 29
Appendix J (Informative) Electrostatic Discharge (ESD) Sensitivity Testing. Direct Contact Model with Charged Devices (DC-CDM) 30
J.1 Overview 30
J.2 Standard Test Module 30
J.3 Test Equipment (CDM Simulator) 30
J.4 Test Equipment Verification 31
J.5 Test Program 34
J.6 Failure Criterion 34
J.7 Grading Standard 34
J.8 Summary 35
References 36
Foreword
This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents".
Drafting.
This document is Part 28 of GB/T 4937, "Mechanical and Climatic Testing Methods for Semiconductor Devices". GB/T 4937 has been published.
The following section.
---Part 1.General Provisions;
---Part 2.Low Pressure;
---Part 3.External Visual Inspection;
---Part 4.Highly Accelerated Steady-State Damp Heat Test (HAST);
---Part 8.Sealing;
---Part 9.Marking Durability;
---Part 10.Mechanical Impact Devices and Components;
---Part 11.Rapid Temperature Change in Two-Liquid Tank Method;
---Part 12.Sweep Frequency Vibration;
---Part 13.Salt Spray;
---Part 14.Lead Strength (Lead Wire Secureness);
---Part 15.Solder Heat Resistance of Through-Hole Mounting Devices;
---Part 16.Particle Collision Noise Detection (PIND);
---Part 17.Neutron Irradiation;
---Part 18.Ionizing Radiation (Total Dose);
---Part 19.Chip Shear Strength;
---Part 20.Combined effects of moisture and soldering heat on molded surface mount devices;
---Part 20-1.Handling, Packaging, Marking, and Shipping of Surface Mount Devices Sensitive to the Combined Effects of Moisture and Solder Heat;
---Part 21.Solderability;
---Part 22.Bond Strength;
---Part 23.High-Temperature Operating Life;
---Part 24.Accelerated Moisture Resistance Test with Unbiased Strong Accelerated Stress;
---Part 25.Temperature Cycling;
---Part 26.Electrostatic Discharge (ESD) Sensitivity Testing Human Model (HBM);
---Part 27.Electrostatic Discharge (ESD) Sensitivity Testing Machine Model (MM);
---Part 28.Electrostatic Discharge (ESD) Sensitivity Testing of Charged Device Models (CDMs) at the Device Level;
---Part 29.Latch Test;
---Part 30.Pretreatment of Unsealed Surface Mount Devices Prior to Reliability Testing;
---Part 31.Flammability of Molded Devices (Internal Causes);
---Part 32.Flammability of Molded Devices (Externally Caused);
---Part 33.Accelerated Moisture-Resistant, Non-Biased High-Pressure Cooking;
---Part 34.Power Cycling;
---Part 35.Acoustic Microscopy Inspection of Plastic-Encapsulated Electronic Components;
---Part 36.Steady-state acceleration;
---Part 37.Plate Drop Test Method Using Accelerometers;
---Part 38.Soft Fault Testing Methods for Semiconductor Devices with Storage;
---Part 39.Measurement of moisture diffusivity and water solubility of organic materials for semiconductor devices;
---Part 40.Plate Drop Test Method Using Strain Gauges;
---Part 41.Test methods for the reliability of non-volatile memory;
---Part 42.Temperature and Humidity Storage;
---Part 44.Test methods for single-event effects (SEE) by neutron irradiation on semiconductor devices.
This document is equivalent to IEC 60749-28.2022 "Semiconductor devices - Mechanical and climatic testing methods - Part 28.Electrostatic discharge".
(ESD) Sensitivity Testing of Charged Component Model (CDM) at the Device Level.
The following minimal editorial changes have been made to this document.
---The phrase "Waveform acquisition procedure see 5.5" in sections 5.5.1, 5.6.1, and 5.6.2.1 of IEC 60749-28.2022 is corrected to "Waveform acquisition procedure".
See 5.4”;
---In section 4.1.1, insert "The electrical schematic diagram of the CDM test equipment is shown in Appendix E" at the end of the second paragraph;
---A voltage symbol "U" has been added after "Graded Test Conditions" in Table 3 of Chapter 7;
---Adjust the segment between Figure H.2 and Figure H.3 to correspond to Note 3 in Figure H.1;
---Change "The process of verification/re-verification and quarterly waveform verification is shown in Figure H.1" in H.1 to "Use factor/offset adjustment method to perform..."
The flowchart for row waveform verification/re-verification and quarterly waveform verification is shown in Figure H.1.Adjust the "Quarterly Waveform Verification Flowchart" in Figure H.1.
The process has been revised to "Flowchart of Waveform Verification/Re-verification and Quarterly Waveform Verification", and the title of Figure H.1 has been changed to "Adjusting with Factors/Offsets".
Example of a process for performing waveform verification/re-verification and quarterly waveform verification;
---Change "The process for verification/re-verification and quarterly waveform verification is shown in Figure H.4" in H.2 to "Use the software voltage adjustment method"
The waveform verification/re-verification and quarterly waveform verification process is shown in Figure H.4.The "Quarterly Waveform Verification Process" in Figure H.4 is adjusted accordingly.
For the "Flowchart of Waveform Verification/Re-verification and Quarterly Waveform Verification", the title of Figure H.4 is changed to "Using Software Voltage Adjustment Method for..."
Example of a process for line waveform verification/re-verification and quarterly waveform verification.
Please note that some content in this document may involve patents. The issuing organization of this document assumes no responsibility for identifying patents.
This document was proposed by the Ministry of Industry and Information Technology of the People's Republic of China.
This document is under the jurisdiction of the National Semiconductor Device Standardization Technical Committee (SAC/TC78).
This document was drafted by. Hebei Beixin Semiconductor Technology Co., Ltd., Hefei Kewei Microelectronics Technology Co., Ltd., and the Ministry of Industry and Information Technology.
The Fifth Research Institute of China Electronics Technology Group Corporation, the Thirteenth Research Institute of China Electronics Technology Group Corporation, Hebei University of Science and Technology, Institute of Microelectronics of Chinese Academy of Sciences, Xi'an University of Electronic Science and Technology
Jilin University of Science and Technology, Tianjin University, Shijiazhuang Campus of the Army Engineering University of the Chinese People's Liberation Army, Jilin Huawei Electronics Co., Ltd., Jilin Mai
Jike Semiconductor Co., Ltd., Beijing Xinkejian Technology Co., Ltd., Jilin Jiangji Special Industry Co., Ltd., Jiangsu Changjing Technology Co., Ltd.
The company, Chongqing Pingwei Industrial Co., Ltd., Hangzhou Yuanfang Electromagnetic Compatibility Technology Co., Ltd., Xunxin Microelectronics (Suzhou) Co., Ltd.
Hunan Zhongnan Hongsi Automation Technology Co., Ltd., Guangdong Zhongzhi Testing Instruments Co., Ltd., Foshan Tongke Electronics Co., Ltd., Hefei Peidun
Storage Technology Co., Ltd., Rizhao Luguang Electronics Technology Co., Ltd., Chipbet Microelectronics (Wuxi) Co., Ltd., Guangdong Kexin Electronics Co., Ltd.
Company, Zhuhai Chengfeng Electronics Technology Co., Ltd., Guangzhou Shengzhong Electronics Co., Ltd., Xianzhike Semiconductor Technology (Dongguan) Co., Ltd., Shanghai Yuanyue
Automotive Electronics Co., Ltd.
The main drafters of this document are. Zhang Tao, Zhao Yuyang, Xu Zhongguang, Chi Lei, Wu Xiaoshuai, Wang Yutao, Gui Mingyang, Wang Chong, Zheng Xuefeng, Wang Chao, and Sun Hongjun.
Yang Jie, Jia Lin, Chen Yazhou, Hu Xiaofeng, Chen Longpo, Jiao Longfei, An Wei, Zhou Xiaoli, Zhang Chong, Peng Hao, Xi Shanbin, Hu Songxiang, Cao Yaolong, Chen Yuyu
Zhang Yuhang, Chen Haoxiang, Shao Weiheng, Sun Kai, Li Bo, Li Zhongmao, Chang Jiang, Yang Shouguo, Shan Shushan, Yin Lijing, Li Yanlin, Sun Zhe, Lei Humin,
Yang Guojiang, Liu Jian, Yu Shengdong, Zhang Jinchen, Li Binhui, Li Shuzhou, Gu Yamin, Zhang Wenhua, Liu Fang, Tu Xinya, Jiang Mingbao, Wu Jin, Tang Jia, Li Xingzhe
Zhong Jianfeng, Huang Chuqi, He Hongwen, Zhu Ligui, Zhang Haitao, Ke Jiajian, Zhang Teng, Xu Xinghua, Luo Zongyou, Zhang Pengcheng.
Introduction
Semiconductor devices are general-purpose basic products in the electronics industry chain and are the most basic units in electronic systems. GB/T 4937 "Semiconductor Devices"
The "Mechanical and Climate Test Methods for Semiconductor Devices" is a fundamental and universal standard for testing semiconductor devices, used for evaluating and assessing semiconductors.
The device plays a crucial role in quality and reliability and is planned to consist of 44 parts.
---Part 1.General Principles. The purpose is to establish general guidelines for mechanical and climatic testing methods for semiconductor devices.
---Part 2.Low Pressure. The purpose is to test the ability of components and materials to avoid electrical breakdown failure.
---Part 3.External Visual Inspection. The purpose is to inspect whether the materials, design, structure, markings, and manufacturing processes of semiconductor devices meet the required standards.
Requirements for procurement documents.
---Part 4.Strong Accelerated Steady-State Damp Heat Test (HAST). The purpose is to specify the Strong Accelerated Steady-State Damp Heat Test (HAST) to detect...
To test the reliability of non-hermetically sealed semiconductor devices in humid environments.
---Part 5.Steady-State Temperature and Humidity Offset Lifetime Test. The purpose is to specify the steady-state temperature and humidity offset lifetime test to detect non-hermetic leaks.
Reliability of packaged semiconductor devices in humid environments.
---Part 6.High-Temperature Storage. The purpose is to investigate the effects of high-temperature storage on semiconductor devices without applying electrical stress.
---Part 7.Internal Moisture Measurement and Other Residual Gas Analysis. The purpose is to assess the quality of the packaging process and provide information on the gas content.
Information on the long-term chemical stability of the substance within the shell.
---Part 8.Sealing. The purpose is to detect the leakage rate of semiconductor devices.
---Part 9.Marking Durability. The purpose is to test the durability of markings on semiconductor devices.
---Part 10.Mechanical Shock Devices and Components. The purpose is to test semiconductor devices and printed circuit board assemblies against moderate stress.
The ability to adapt to shocks.
---Part 11.Rapid Temperature Change Two-Batter Method. The purpose is to define the rapid temperature change (two-batter method) for semiconductor devices.
The test procedures, failure criteria, and other related content.
---Part 12.Sweep Frequency Vibration. The purpose is to detect the effect of vibration on semiconductor devices within a specified frequency range.
---Part 13.Salt Spray. The purpose is to test the corrosion resistance of semiconductor devices.
---Part 14.Lead Strength (Lead Bonding). The purpose is to test the bonding strength of semiconductor device lead/package interfaces and leads.
Solid.
---Part 15.Solder Heat Resistance of Through-Hole Mounted Devices. The purpose is to test the solder heat resistance of through-hole mounted solid-state packaged semiconductor devices.
The ability to withstand the thermal stress generated by peak soldering or soldering leads with a soldering iron.
---Part 16.Particle Collision Noise Detection (PIND). The purpose is to specify a method for detecting free particles within cavity devices.
---Part 17.Neutron Irradiation. The purpose is to detect the susceptibility of semiconductor devices to performance degradation in a neutron environment.
---Part 18.Ionizing Radiation (Total Dose). The purpose is to specify the methods for assessing the effects of low-dose-rate ionizing radiation on semiconductor devices.
Rapid annealing test method.
---Part 19.Chip Shear Strength. The purpose is to test the materials and processes used in mounting semiconductor chips onto sockets or substrates.
The completeness of the process steps.
---Part 20.Combined Effects of Moisture and Soldering Heat on Molded Surface Mount Devices. The aim is to simulate storage conditions in warehouses or dry environments.
The moisture absorbed by the plastic-sealed surface of semiconductor devices in a dry packaging environment is then evaluated to assess their resistance to soldering heat.
---Part 20-1.Handling, Packaging, Marking, and Shipping of Surface Mount Devices Sensitive to the Combined Effects of Moisture and Solder Heat. The purpose is to...
This specifies the methods for handling, packaging, transporting, and using surface-mount semiconductor devices that are sensitive to the combined effects of moisture and soldering heat.
---Part 21.Solderability. This section specifies the solderability of component package leads that are soldered using lead-tin solder or lead-free solder.
Solderability test procedure.
---Part 22.Bond Strength. The purpose is to test the bond strength of semiconductor devices.
---Part 23.High-Temperature Operating Life. The purpose is to specify the effects of bias conditions and temperature on solid-state devices over time.
Experimental methods.
---Part 24.Accelerated Moisture Resistance Test with No Bias. The purpose is to test the performance of non-hermetic solid-state devices in humid environments.
Reliability under certain conditions.
---Part 25.Temperature Cycling. The purpose is to test the ability of semiconductor devices, components, and circuit board assemblies to withstand extreme high temperatures and extreme...
The ability of low-temperature alternating forces to induce mechanical stress.
---Part 26.Human Model (HBM) for Electrostatic Discharge (ESD) Sensitivity Testing. The aim is to specify reliable and repeatable...
HBMESD testing method.
---Part 27.Electrostatic Discharge (ESD) Sensitivity Testing Machine Model (MM). The purpose is to specify reliable and repeatable...
MMESD testing method.
---Part 28.Electrostatic Discharge (ESD) Sensitivity Testing of Charged Device Models (CDMs) at the Device Level. The purpose is to specify...
A reliable and repeatable CDMESD testing method.
---Part 29.Latch-up Testing. The purpose is to specify methods for testing the latch-up characteristics of integrated circuits and criteria for latch-up failure.
---Part 30.Pre-treatment of Unsealed Surface Mount Devices Prior to Reliability Testing. The purpose is to specify the pre-treatment procedures for unsealed surface mount devices.
The standard procedure for pre-processing components before reliability testing.
---Part 31.Flammability of Molded Devices (Internal Cause). The purpose is to test whether internal flammability of molded devices is caused by overload.
The part heats up and burns.
---Part 32.Flammability of Molded Devices (Externally Caused). The purpose is to test whether flammability of molded devices is caused by external heat.
combustion.
---Part 33.Accelerated Moisture-Resistant, Bias-Free High-Pressure Cooking. The aim is to confirm the internal failure mechanism of semiconductor device packages.
---Part 34.Power Cycling. The purpose is to detect power cycling by applying cyclic power losses to the chips and connectors inside semiconductor devices.
To test the heat and mechanical stress resistance of semiconductor devices.
---Part 35.Acoustic Microscopy Inspection of Plastic-Encapsulated Electronic Components. The purpose is to specify the acoustic microscopy requirements for plastic-encapsulated electronic components.
Methods for detecting defects (delamination, cracks, voids, etc.).
---Part 36.Steady-State Acceleration. The purpose is to specify the test method for the steady-state acceleration of cavity semiconductor devices in order to detect their structural properties.
Defects in structure and mechanical type.
---Part 37.Plate Drop Test Method Using Accelerometers. The purpose is to specify the plate drop test method using accelerometers.
The method allows for repeated testing of surface-mount devices during drop tests, while also reproducing common failure modes encountered during product-level testing.
---Part 38.Soft Fault Testing Methods for Semiconductor Devices with Storage. The purpose is to specify the operating conditions of semiconductor devices with storage.
Experimental methods for soft error sensitivity in high-energy particle environments (such as alpha radiation).
---Part 39.Measurement of Moisture Diffusivity and Water Solubility of Organic Materials for Semiconductor Devices. The purpose is to specify the applications of organic materials in semiconductor devices.
Methods for measuring the moisture diffusivity and water solubility of organic materials used in the packaging of bulk devices.
---Part 40.Plate Drop Test Method Using Strain Gauges. The purpose is to specify the plate drop test method using strain gauges.
This method allows for repeated testing of surface-mount devices during drop tests, while also reproducing common failure modes encountered during product-level testing.
---Part 41.Test methods for the reliability of non-volatile memory. The purpose is to specify the effective durability and reliability of non-volatile memory.
According to the requirements of the holding and temperature cycling test.
---Part 42.Temperature and Humidity Storage. The purpose is to specify test methods for assessing the ability of semiconductor devices to withstand high temperature and humidity environments.
---Part 44.Test methods for single-event effects (SEE) under neutron irradiation in semiconductor devices. The purpose is to specify the detection methods for high-density integrated circuits.
Test methods for single-event effect (SEE) in circuits.
GB/T 4937 (all parts) are adopted one-to-one with IEC 60749 (all parts) to ensure that the test methods for semiconductor devices are consistent with national standards.
This standard aligns with international standards, bringing semiconductor device testing methods, reliability evaluation, and quality levels in line with international practices. By establishing this standard, a unified approach is achieved.
The test methods and stresses were improved, and the standard system for semiconductor devices was perfected.
Mechanical and Climate Testing Methods for Semiconductor Devices
Part 28.Electrostatic Discharge (ESD) Sensitivity Testing
Charged Device Model (CDM) Device Level
1 Scope
This document addresses the damage or degradation caused by electrostatic discharge (ESD) to a specified charged device model (CDM) based on components and microcircuits.
Sensitivity assessment establishes procedures for ESD testing, evaluation, and classification of components and microcircuits. This document applies to the evaluation of all semiconductor packages.
Devices, thin-film circuits, surface acoustic wave (SAW) devices, optoelectronic devices, hybrid integrated circuits (HICs), and multi-chipsets that include any of these devices.
Components (MCMs). For testing purposes, components need to be assembled in a package similar to that of the end application. The CDM models discussed in this document are not applicable.
This document describes the field induction (FI) method, an alternative to the direct contact (DC) method, for use in socket-type discharge model testing equipment. It is intended for use in socket-type discharge model testing equipment.
See Appendix J.
The purpose of this document is to establish a CDMESD that can reproduce CDM failures and provide reliable and repeatable testing across different test equipment.
The test results are consistent with the test method regardless of device type. Repeatability data ensures the accurate classification of CDMESD sensitivity levels.
contrast.
2 Normative references
This document has no normative references.
3 Terms and Definitions
The following terms and definitions apply to this document.
3.1
Using a charged device model (CDM) to simulate the rapid transfer of a charged device to another low-potential object via a single pin or terminal in real-world scenarios.
Electrostatic discharge (ESD) events.
3.2
tester
Devices that simulate device-level CDMESD events using non-socket test methods.
Note. In this document, "equipment" refers to "test equipment".
3.3
Capacitance Limit
CSmal
The critical capacitance value of an integrated circuit or discrete semiconductor device to a CDM field plate. If specified conditions are met, the capacitance is less than or equal to this value.
If the condition is met, then it is determined that no CDM test is required.
3.4
dielectric layer
A thin insulator placed above the field plate to isolate the device from the field plate.
...
