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GB/T 43885-2024 English PDF

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US$279.00 · In stock
Delivery: <= 3 days. True-PDF full-copy in English will be manually translated and delivered via email.
GB/T 43885-2024: Silicon carbide epitaxial wafers
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 43885-2024	279	Add to Cart	3 days	Silicon carbide epitaxial wafers	Valid

Similar standards

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Basic data

Standard ID: GB/T 43885-2024 (GB/T43885-2024)
Description (Translated English): Silicon carbide epitaxial wafers
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H83
Classification of International Standard: 29.045
Word Count Estimation: 14,174
Date of Issue: 2024-04-25
Date of Implementation: 2024-11-01
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration

GB/T 43885-2024: Silicon carbide epitaxial wafers

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 29:045 CCSH83 National Standards of People's Republic of China Silicon Carbide Epitaxial Wafer Released on 2024-04-25 2024-11-01 Implementation State Administration for Market Regulation The National Standardization Administration issued

Foreword

This document is in accordance with the provisions of GB/T 1:1-2020 "Guidelines for standardization work Part 1: Structure and drafting rules for standardization documents" Drafting: Please note that some of the contents of this document may involve patents: The issuing organization of this document does not assume the responsibility for identifying patents: This document was jointly issued by the National Technical Committee on Semiconductor Equipment and Materials Standardization (SAC/TC203) and the National Technical Committee on Semiconductor Equipment and Materials Standardization (SAC/TC203): It was jointly proposed and coordinated by the Materials Branch of the Chemical Technology Committee (SAC/TC203/SC2): This document was drafted by: Nanjing Guosheng Electronics Co:, Ltd:, Guangdong Tianyu Semiconductor Co:, Ltd:, Shanghai Tianyue Semiconductor Materials Co:, Ltd: Co:, Ltd:, Beijing Tianke Heda Semiconductor Co:, Ltd:, Hantian Tiancheng Electronic Technology (Xiamen) Co:, Ltd:, TCL Huanxin Semiconductor (Tianjin) Co:, Ltd:, Nonferrous Metals Technology and Economic Research Institute Co:, Ltd:, Nanjing Shengxin Semiconductor Materials Co:, Ltd:, Shanxi Shuokejing Co:, Ltd:, Hebei Puxing Electronic Technology Co:, Ltd:, Anhui Changfei Advanced Semiconductor Co:, Ltd:, China Electronics Compound Semiconductor Co:, Ltd: Company, Shanghai Hejing Silicon Material Co:, Ltd:, Jiangsu Huaxing Laser Technology Co:, Ltd:, Hangzhou Qianjing Semiconductor Co:, Ltd:, Hunan Sanan Semiconductor Co:, Ltd:, Zhejiang Jingrui Electronic Technology Co:, Ltd:, Ningbo Hesheng New Materials Co:, Ltd:, Shenyang Xingguang Technical Ceramics Co:, Ltd: Company, Shenzhen Basic Semiconductor Co:, Ltd:, Haidike (Nantong) Optoelectronics Technology Co:, Ltd:, Harbin Keyou Semiconductor Industry Equipment and Technology Research Institute Co:, Ltd: and Lianke Semiconductor Co:, Ltd: The main drafters of this document are: Li Guopeng, Qiu Guangyin, Liu Yong, Luo Hong, Li Suqing, Ding Xiongjie, Shu Tianyu, She Zongjing, Feng Gan, Yang Yucong, Wang Yinhai, Hou Xiaorui, Xue Hongwei, Liu Hongchao, Jin Xiangjun, Shang Haibo, Liu Wei, Wang Yan, Xu Suocheng, Li Biqing, Chen Hao, Yuan Zhaogeng, Zhou Xun, Liu Changchun, Wang Zhihan, Huang Qinjin, Zhao Lili, Hu Dongli, and He Weiwei: Silicon Carbide Epitaxial Wafer

1 Scope

This document specifies the product classification, technical requirements, test methods, inspection rules and marking, packaging, transportation and storage of silicon carbide epitaxial wafers, Accompanying documents and order form contents: This document is applicable to epitaxial wafers grown on conductive silicon carbide substrates with homogeneous epitaxial layers of silicon carbide: The product is used to make silicon carbide power Electronic devices:

2 Normative references

The contents of the following documents constitute the essential clauses of this document through normative references in this document: For referenced documents without a date, only the version corresponding to that date applies to this document; for referenced documents without a date, the latest version (including all amendments) applies to This document: GB/T 2828:1-2012 Sampling procedures for inspection by attributes Part 1: Sampling for batch inspection based on acceptance quality limit (AQL) plan GB/T 6624 Visual inspection method for surface quality of silicon polished wafers GB/T 14146 Determination of carrier concentration in silicon epitaxial layers - Capacitance-voltage method GB/T 14264 Terminology of Semiconductor Materials GB/T 19921 Test method for surface particles of silicon polishing wafers GB/T 29505 Surface roughness measurement method for flat surfaces of silicon wafers GB/T 30656 Silicon carbide single crystal polishing sheet GB/T 32278 Test method for flatness of silicon carbide single crystal wafer GB/T 39145 Determination of metal element content on silicon wafer surface - Inductively coupled plasma mass spectrometry GB/T 42902 Test of surface defects of silicon carbide epitaxial wafers - Laser scattering method GB/T 42905 Test method for thickness of silicon carbide epitaxial layer - infrared reflection method YS/T 28 Wafer Packaging

3 Terms and definitions

The terms and definitions defined in GB/T 14264 apply to this document:

4 Product Categories

4:1 Silicon carbide epitaxial wafers are divided into n-type and p-type according to the conductivity type of the epitaxial layer: The carrier element of the n-type epitaxial layer is nitrogen, and the carrier element of the p-type epitaxial layer is nitrogen: The daughter element is aluminum: 4:2 Silicon carbide epitaxial wafers are divided into types such as 76:2mm, 100:0mm, 150:0mm, and:200:0mm according to their diameters: 4:3 Silicon carbide epitaxial wafers are divided into 4H and 6H according to their crystal form: ......

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Tips & Frequently Asked Questions:

Question 1: How long will the true-PDF of GB/T 43885-2024_English be delivered?

Answer: Upon your order, we will start to translate GB/T 43885-2024_English as soon as possible, and keep you informed of the progress. The lead time is typically 1 ~ 3 working days. The lengthier the document the longer the lead time.

Question 2: Can I share the purchased PDF of GB/T 43885-2024_English with my colleagues?

Answer: Yes. The purchased PDF of GB/T 43885-2024_English will be deemed to be sold to your employer/organization who actually pays for it, including your colleagues and your employer's intranet.

Question 3: Does the price include tax/VAT?

Answer: Yes. Our tax invoice, downloaded/delivered in 9 seconds, includes all tax/VAT and complies with 100+ countries' tax regulations (tax exempted in 100+ countries) -- See Avoidance of Double Taxation Agreements (DTAs): List of DTAs signed between Singapore and 100+ countries

Question 4: Do you accept my currency other than USD?

Answer: Yes. If you need your currency to be printed on the invoice, please write an email to Sales@ChineseStandard.net. In 2 working-hours, we will create a special link for you to pay in any currencies. Otherwise, follow the normal steps: Add to Cart -- Checkout -- Select your currency to pay.