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SJ/T 11488-2015: Test method for measuring resistivity, hall coefficient and determining hall mobility in semi-insulating GaAs single crystals Delivery: 9 seconds. True-PDF full-copy in English & invoice will be downloaded + auto-delivered via email. See step-by-step procedure Status: Valid
Similar standardsSJ/T 11488-2015: Test method for measuring resistivity, hall coefficient and determining hall mobility in semi-insulating GaAs single crystals---This is an excerpt. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.), auto-downloaded/delivered in 9 seconds, can be purchased online: https://www.ChineseStandard.net/PDF.aspx/SJT11488-2015 SJ ELECTRONIC INDUSTRY STANDARD OF THE PEOPLE’S REPUBLIC OF CHINA ICS 29.045 H 83 Filing No.: 50545-2015 Test method for measuring resistivity, hall coefficient and determining hall mobility in semi-insulating GaAs single crystals ISSUED ON: APRIL 30, 2015 IMPLEMENTED ON: OCTOBER 01, 2015 Issued by: Ministry of Industry and Information Technology of PRC Table of ContentsForeword ... 3 1 Scope ... 4 2 Normative references ... 4 3 Terms and definitions ... 4 4 Principles of the method ... 4 5 Interfering factors ... 5 6 Instruments ... 5 7 Environmental requirements ... 5 8 Sample preparation ... 5 9 Measurement procedure ... 5 10 Calculations ... 6 11 Precision ... 7 12 Reports ... 7 Test method for measuring resistivity, hall coefficient and determining hall mobility in semi-insulating GaAs single crystals1 ScopeThis standard specifies the methods for measuring resistivity, hall coefficient and determining hall mobility in semi-insulating GaAs single crystals. This standard applies to the measurement of electrical parameters of semi-insulating GaAs single crystals, which have a resistivity in the range of 104 Ω•cm ~ 109 Ω•cm.2 Normative referencesThe following documents are essential to the application of this document. For the dated documents, only the versions with the dates indicated are applicable to this document; for the undated documents, only the latest version (including all the amendments) is applicable to this standard. GB/T 4326 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient GB/T 14264 Semiconductor materials - Terms and definitions3 Terms and definitionsThe terms and definitions, which are defined in GB/T 14264, apply to this document.4 Principles of the methodWhen a current I is passed along the X-axis direction, on a rectangular semiconductor sheet, AND a magnetic field B is applied in the Z-axis direction, a potential difference VH is generated in the direction, which is perpendicular to the current and magnetic field (that is, the Y-axis direction). This phenomenon is called Hall effect, wherein VH is called the Hall voltage. The cause of the Hall effect is the Lorentz force of the charged particles, that form the directional movement of the current, that is, the carrier in the magnetic field. The Hall effect can be used to measure the electrical parameters of the semi-insulating GaAs single crystals.5 Interfering factorsMeasurement temperature, ohmic contact electrode preparation, etc. will all affect the measurement results.6 InstrumentsThe measuring instrument consists of the following parts: a) Hall test system. The applied magnetic field strength is 0.3 T ~ 1.0 T; the uniformity of the magnetic field within the sample measurement range is better than 1%; the input impedance is lower than 1013 Ω; the accuracy of the current source is better than 1%; the temperature accuracy is better than 0.1 °C; b) Micrometer, accuracy ±0.01 mm; c) Sample holder, protected from light.7 Environmental requirementsThe ambient temperature is 22 °C ~ 24 °C; the relative humidity is less than 60%. The test shielding room shall not have mechanical shock, vibration, or electromagnetic interference.8 Sample preparation8.1 Cutting, grinding, cleaning of specimen Follow the requirements of GB/T 4326, to carry out cutting, grinding, cleaning of specimen. 8.2 Ohm contact electrodes Follow the requirements of GB/T 4326, use In, AuGe/Au or AuGe/Ni alloys to prepare ohmic contact electrodes.9 Measurement procedureMake measurement, according to the measurement steps which are specified in GB/T 4326. ......Source: Above contents are excerpted from the full-copy PDF -- translated/reviewed by: www.ChineseStandard.net / Wayne Zheng et al. 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