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GB/T 43682-2024 English PDF

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GB/T 43682-2024: Nanotechnology - Measurement methods for carrier mobility and sheet resistance of graphene films of sub-nanometer thickness
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GB/T 43682-2024379 Add to Cart 4 days Nanotechnology - Measurement methods for carrier mobility and sheet resistance of graphene films of sub-nanometer thickness Valid

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Basic data

Standard ID: GB/T 43682-2024 (GB/T43682-2024)
Description (Translated English): Nanotechnology - Measurement methods for carrier mobility and sheet resistance of graphene films of sub-nanometer thickness
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: A42
Classification of International Standard: 71.040.50
Word Count Estimation: 18,142
Date of Issue: 2024-03-15
Date of Implementation: 2024-07-01
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration

GB/T 43682-2024: Nanotechnology - Measurement methods for carrier mobility and sheet resistance of graphene films of sub-nanometer thickness


---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 71.040.50 CCSA42 National Standards of People's Republic of China Nanotechnology Sub-nanometer thickness graphene film carrier Mobility and Sheet Resistance Measurement Methods Released on 2024-03-15 2024-07-01 Implementation State Administration for Market Regulation The National Standardization Administration issued

Table of Contents

Preface III Introduction IV 1 Scope 1 2 Normative references 1 3 Terms and Definitions 1 4 Principle 2 5 Equipment 3 6 Device preparation and measurement process 4 7 Calculation method 7 8 Analysis and calculation of uncertainty 9 9 Measurement Report 10 Appendix A (Informative) Graphene samples grown by chemical vapor deposition (CVD) Mobility and sheet resistance are key control characteristics for graphene film quality control and product development. From touch screens to solar cells, sheet resistance is a key control characteristic for graphene films. The resistance varies by two to three orders of magnitude. However, even when made of the same thin film, the carrier mobility extracted from devices with different structures varies. The formulation of this document is conducive to standardizing the shape, electrode type, electrode contact method, and measurement of Hall devices of graphene films. The scientific nature of the graphene film quality evaluation system can be improved, and the influence of different experimental conditions on the measurement of carrier mobility and sheet resistance can be reduced. At the same time, the measurement method specified in this document is simple to operate, low-cost and has good economic benefits. Nanotechnology Sub-nanometer thickness graphene film carrier Mobility and Sheet Resistance Measurement Methods

1 Scope

This paper describes the principle of sample preparation and carrier mobility and sheet resistance measurements of Hall devices in sub-nanometer thick graphene films. The instrument includes the principles, equipment, device preparation and measurement process, calculation methods, analysis and calculation of uncertainty, and measurement reports. This document applies to the carrier mobility of sub-nanometer thick graphene films with length and width greater than 100 μm. (< 104cm2/Vs) and sheet resistance measurements.

2 Normative references

This document has no normative references.

3 Terms and definitions

The following terms and definitions apply to this document. 3.1 Graphene film of sub-nanometer thickness Graphene film with a thickness of less than 1nm. 3.2 Hall Effect If a magnetic field is applied to a sample with current flowing through it, a transverse potential difference is generated in the direction perpendicular to the current and magnetic field due to the influence of the Lorentz force. Phenomenon. [Source. GB/T 14264-2009, 3.111, modified] 3.3 Resistivity The ratio of the potential gradient parallel to the current flow in a material to the current density. Note. Resistivity is a directly measurable material parameter. [Source. GB/T 4326-2006, 2.1, modified] 3.4 Hall electric field When a sub-nanometer graphene film (3.1) sample is simultaneously subjected to a mutually perpendicular electric field and a magnetic field, the carriers in the sample will be The sample is deflected in three mutually perpendicular directions, establishing a transverse electric field on both sides of the sample. [Source. GB/T 4326-2006, 2.2, modified] 3.5 Hall coefficient halcoefficient The ratio of the Hall electric field (3.4) to the product of current density and magnetic flux density. [Source. GB/T 4326-2006, 2.2, modified] 3.6 The ratio of the absolute value of the Hall coefficient (3.5) to the resistivity. 3.7 aspect ratio The ratio of the width (w) to the length (l) of a Hall device.
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