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Test method for resistivity of semi-insulating monocrystalline silicon carbide by contactless measurement
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Basic data
| Standard ID | GB/T 42271-2022 (GB/T42271-2022) |
| Description (Translated English) | Test method for resistivity of semi-insulating monocrystalline silicon carbide by contactless measurement |
| Sector / Industry | National Standard (Recommended) |
| Classification of Chinese Standard | H21 |
| Classification of International Standard | 77.040 |
| Word Count Estimation | 10,198 |
| Date of Issue | 2022-12-30 |
| Date of Implementation | 2023-04-01 |
| Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration |
GB/T 42271-2022: Test method for resistivity of semi-insulating monocrystalline silicon carbide by contactless measurement
---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 77.040
CCSH21
National Standards of People's Republic of China
Resistivity of semi-insulating silicon carbide single crystal
non-contact testing method
Posted on 2022-12-30
2023-04-01 Implementation
State Administration for Market Regulation
Released by the National Standardization Management Committee
foreword
This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1.Structure and Drafting Rules for Standardization Documents"
drafting.
Please note that some contents of this document may refer to patents. The issuing agency of this document assumes no responsibility for identifying patents.
This document is prepared by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standard
It is jointly proposed and managed by the Materials Subcommittee (SAC/TC203/SC2) of the Chemical Technology Committee.
This document was drafted by. Beijing Tianke Heda Semiconductor Co., Ltd., Zhongguancun Tianhe Wide Bandgap Semiconductor Technology Innovation Alliance, An
Huichangfei Advanced Semiconductor Co., Ltd., Nonferrous Metal Technology and Economic Research Institute Co., Ltd., China Electronics Technology Group Corporation forty-sixth
graduate School.
The main drafters of this document. Peng Tonghua, She Zongjing, Wang Dajun, Zhang He, Li Suqing, Wang Bo, Yang Jian, Yuan Song, Liu Lina.
Resistivity of semi-insulating silicon carbide single crystal
non-contact testing method
1 Scope
This document describes a method for the non-contact measurement of resistivity of semi-insulating silicon carbide single crystals.
This document is applicable to the measurement of semi-insulating silicon carbide single wafers with resistivity ranging from 1×105Ω·cm to 1×1012Ω·cm.
2 Normative references
The contents of the following documents constitute the essential provisions of this document through normative references in the text. Among them, dated references
For documents, only the version corresponding to the date is applicable to this document; for undated reference documents, the latest version (including all amendments) is applicable to
this document.
GB/T 14264 Terminology of semiconductor materials
GB/T 30656 Silicon carbide single crystal polished wafer
3 Terms and Definitions
The terms and definitions defined in GB/T 14264 apply to this document.
4 principles
The non-contact resistivity test uses the principle of capacitive charge and discharge. First charge the sample instantaneously, and then use the instrument to monitor the discharge in real time
In order to obtain the relaxation curve of the change, the relaxation time (τ) is obtained by mathematical analysis of the curve, and finally through
The relaxation time (τ) was used to calculate the resistivity of semi-insulating SiC single crystals.
5 Test conditions
5.1 The test machine used in the test process should have no vibration, no electromagnetic interference and be well grounded.
5.2 Temperature. (23±3)℃; relative humidity (RH). 60%±20%.
6 Interfering factors
6.1 Different light intensities will affect the test results of resistivity, and the hood of the equipment should be closed during the test.
6.2 Static electricity and vibration test environment will affect the test results of resistivity, and strict shielding measures should be taken during the test.
6.3 Particle contamination on the surface of the sample, the adsorption stage and the test probe will affect the resistivity of the semi-insulating silicon carbide single wafer.
Confirm that the surface of the sample, the adsorption stage and the test probe are free of large particles visible to the naked eye.
6.4 Changes in sample thickness will affect the test results of resistivity, and the sample thickness should be uniform before testing.
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