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GB/T 39163-2020 English PDF

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GB/T 39163-2020: Test methods of the bonding strength for target-backing plate assemblies
Status: Valid
Standard IDUSDBUY PDFLead-DaysStandard Title (Description)Status
GB/T 39163-2020229 Add to Cart 3 days Test methods of the bonding strength for target-backing plate assemblies Valid

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Basic data

Standard ID: GB/T 39163-2020 (GB/T39163-2020)
Description (Translated English): Test methods of the bonding strength for target-backing plate assemblies
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H22
Classification of International Standard: 19.060
Word Count Estimation: 12,167
Date of Issue: 2020-11-19
Date of Implementation: 2021-10-01
Quoted Standard: GB/T 228.1-2010; GB/T 228.2; GB/T 8170; GB/T 10623; GB/T 16825.1
Regulation (derived from): National Standard Announcement No. 26 of 2020
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration
Summary: This standard specifies the test method for the bonding strength between the target and the backplane. This standard is applicable to the test method for the bonding strength between target and backplane for coating in the microelectronics field.

GB/T 39163-2020: Test methods of the bonding strength for target-backing plate assemblies

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
(Target and backplane bonding strength test method) ICS 19.060 H22 National Standards of People's Republic of China Target and backplane bonding strength test method 2020-11-19 released 2021-10-01 implementation State Administration for Market Regulation Issued by the National Standardization Management Committee

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard was proposed by China Nonferrous Metals Industry Association. This standard is under the jurisdiction of the National Nonferrous Metals Standardization Technical Committee (SAC/TC243). Drafting organizations of this standard. Youyan Yijin New Materials Co., Ltd., Non-ferrous Metal Technology and Economic Research Institute, Ningbo Jiangfeng Electronic Materials Co., Ltd. Co., Ltd., Shandong Zibo Hanergy Thin Film Solar Co., Ltd., Guiyan Platinum Co., Ltd. The main drafters of this standard. Ding Zhaochong, Chen Ming, Zhao Yongshan, Xiong Xiaodong, He Xin, Lin Ruoxu, Li Yongjun, Zhang Xiaona, Cao Huanhuan, Wang Yunneng, Yuan Haijun, Li Lili, Cao Xiaomeng, Zhang Jing, Wang Chuanjun. Target and backplane bonding strength test method

1 Scope

This standard specifies the test method for the bonding strength between the target and the backplane. This standard is applicable to the test method for the bonding strength between the target material and the backplane for coating in the field of microelectronics. Note. The combination of target and backplane includes brazing (traditional solder, conductive silver glue, nano-foil welding, etc.), diffusion welding, electron beam or laser welding, explosive welding, friction Welding, mechanical compounding, cold spraying, thermal spraying, etc.

2 Normative references

The following documents are indispensable for the application of this document. For dated reference documents, only the dated version applies to this article Pieces. For undated references, the latest version (including all amendments) applies to this document. GB/T 228.1-2010 Metallic materials tensile test part 1.room temperature test method GB/T 228.2 Tensile Test of Metallic Materials Part 2.High Temperature Test Method GB/T 8170 Numerical rounding rules and the expression and determination of limit values GB/T 10623 Terminology for Mechanical Properties Test of Metallic Materials GB/T 16825.1 Inspection of static uniaxial testing machine Part 1.Inspection and test of force measuring system of tensile and (or) compression testing machine calibration

3 Terms and definitions

The following terms and definitions defined in GB/T 228.1-2010 apply to this document. For ease of use, the following is repeated Some terms and definitions in GB/T 228.1-2010. 3.1 Target The cathode part in sputtering deposition technology. The cathode material is in the form of molecules, atoms or ions under the impact of positively charged cations. The formula is separated from the cathode and deposited on the anode surface. It is composed of target blank and back plate. 3.2 Target blank The part of the cathode used as sputtering material. 3.3 Backplane The part used to support or fix the target blank. 3.4 Maximum force Fm The maximum force that the specimen can resist after the yield stage. For materials with no obvious yield (continuous yield), the maximum force during the test. Note. Rewrite GB/T 228.1-2010, definitions 3.9.1 and 3.9.2.
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