GB/T 39145-2020 English PDF

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GB/T 39145-2020: Test method for the content of surface metal elements on silicon wafers - Inductively coupled plasma mass spectrometry
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 39145-2020	189	Add to Cart	3 days	Test method for the content of surface metal elements on silicon wafers - Inductively coupled plasma mass spectrometry	Valid

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GB/T 14849.3   GB/T 14849.1   GB/T 38976   GB/T 14140   GB/T 39144   

Basic data

Standard ID: GB/T 39145-2020 (GB/T39145-2020)
Description (Translated English): Test method for the content of surface metal elements on silicon wafers - Inductively coupled plasma mass spectrometry
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H17
Classification of International Standard: 77.040
Word Count Estimation: 10,173
Date of Issue: 2020-10-11
Date of Implementation: 2021-09-01
Regulation (derived from): National Standard Announcement No. 21 of 2020
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration

GB/T 39145-2020: Test method for the content of surface metal elements on silicon wafers - Inductively coupled plasma mass spectrometry

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test method for the content of surface metal elements on silicon wafers - Inductively coupled plasma mass spectrometry ICS 77.040 H17 National Standards of People's Republic of China Determination of Metal Element Content on the Surface of Silicon Wafer Inductively coupled plasma mass spectrometry 2020-10-11 released 2021-09-01 implementation State Administration for Market Regulation Issued by the National Standardization Management Committee

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard is composed of the National Semiconductor Equipment and Material Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Material Standard The material sub-committee of the Chemical Technology Committee (SAC/TC203/SC2) jointly proposed and managed. Drafting organizations of this standard. Nanjing Guosheng Electronics Co., Ltd., Youyan Semiconductor Materials Co., Ltd., Zhejiang Jinruihong Technology Co., Ltd. Company, Shanghai Hejing Silicon Materials Co., Ltd., Non-ferrous Metal Technology and Economic Research Institute, Wuxi Huaying Microelectronics Technology Co., Ltd., Longteng Semiconductor Limited company, Xiamen Kexin Electronics Co., Ltd. The main drafters of this standard. Luo Hong, Pan Wenbin, Zhao Erjing, Sun Yan, Zhang Haiying, Xu Xinhua, Wen Ziying, Hu Jinzhi, Li Suqing, Ma Linbao, Li Jun needs. Determination of Metal Element Content on the Surface of Silicon Wafer Inductively coupled plasma mass spectrometry

1 Scope

This standard specifies the method for determining the content of metal elements on the surface of silicon wafers by inductively coupled plasma mass spectrometry. This standard is applicable to the trace metal sodium, magnesium, aluminum, potassium, calcium, chromium, manganese, iron, cobalt, nickel, copper and zinc on the surface of polished silicon single crystal wafers and silicon epitaxial wafers. The determination of the element content is in the range of 108cm-2~1013cm-2.This standard also applies to non-patterned silicon annealing wafers, silicon diffusion wafers, etc. Determination of trace metal element content on silicon wafer surface. Note. The metal element content on the surface of the silicon wafer is calculated in the number of atoms per square centimeter.

2 Normative references

The following documents are indispensable for the application of this document. For dated reference documents, only the dated version applies to this article Pieces. For undated references, the latest version (including all amendments) applies to this document. GB/T 6624 Visual inspection method for surface quality of polished silicon wafer GB/T 14264 Terminology of Semiconductor Materials GB/T 17433 Basic terms for chemical analysis of metallurgical products GB/T 19921 Test method for surface particles of polished silicon wafers GB/T 25915.1-2010 Clean room and related controlled environment Part 1.Air cleanliness grade GB/T 37837 Quadrupole Inductively Coupled Plasma Mass Spectrometry Method General JJF1159 Quadrupole Inductively Coupled Plasma Mass Spectrometer Calibration Specification SEMIF63 Ultrapure Water Guide for Semiconductor Processing

3 Terms and definitions

The following terms and definitions defined in GB/T 14264, GB/T 17433, GB/T 37837 and JJF1159 apply to this document. 3.1 Scan solution A solution containing trace metal elements on the surface of a silicon wafer collected by scanning. 3.2 Direct acid drop decomposition Decompose the oxide layer on the surface of the silicon wafer with an extraction solution containing hydrofluoric acid to form a hydrophobic surface, so that trace metals on the surface of the silicon wafer are collected A scanning solution is formed in the extraction solution. 3.3 Gas phase decomposition Use hydrofluoric acid vapor to decompose the oxide layer on the surface of the silicon wafer to form a hydrophobic surface, and then use an extraction solution containing hydrofluoric acid to extract the surface of the silicon wafer. ......

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