GB/T 34481-2017 English PDF

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GB/T 34481-2017: Test method for measuring etch pit density (EPD) in low dislocation density monocrystalline germanium slices
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 34481-2017	109	Add to Cart	3 days	Test method for measuring etch pit density (EPD) in low dislocation density monocrystalline germanium slices	Valid

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Basic data

Standard ID: GB/T 34481-2017 (GB/T34481-2017)
Description (Translated English): Test method for measuring etch pit density (EPD) in low dislocation density monocrystalline germanium slices
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H25
Classification of International Standard: 77.040
Word Count Estimation: 5,510
Date of Issue: 2017-10-14
Date of Implementation: 2018-07-01
Regulation (derived from): National Standard Announcement 2017 No. 26
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China

GB/T 34481-2017: Test method for measuring etch pit density (EPD) in low dislocation density monocrystalline germanium slices

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test method for measuring etch pit density (EPD) in low dislocation density monocrystalline germanium slices ICS 77.040 H25 National Standards of People's Republic of China Low Dislocation Density Germanium Single Crystal Etch Pit Density (EPD) measurement method Testmethodformeasuringetchpitdensity (EPD) inlowdislocationdensity 2017-10-14 Published 2018-07-01 implementation General Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China China National Standardization Administration released

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standards Technical Committee Sub-Technical Committee on Materials (SAC/TC203/SC2) co-sponsored and centralized. This standard was drafted unit. Yunnan Branch Xin Crystal Materials Co., Ltd., Yunnan Lincang Xin Yuan Germanium Co., Ltd., Chinese Academy of Sciences Body Institute. The main drafters of this standard. Huifeng, universal Kun, Dong Rukun. Low Dislocation Density Germanium Single Crystal Etch Pit Density (EPD) measurement method

1 Scope

This standard specifies the low dislocation density of germanium single crystal etching pit density (EPD) measurement method. This standard applies to the test dislocation density less than 1000/cm2, a diameter of 75mm ~ 150mm dislocation of the circular germanium single crystal Corrosion pit density.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version applies to this article Pieces. For undated references, the latest edition (including all amendments) applies to this document. GB/T 5252 germanium single crystal dislocation corrosion pit density measurement method

3 method summary

Germanium single-wafer chemical etching method shows dislocation corrosion pits, the microscope can be observed within the field of view the number of corrosion pits. Dislocation corrosion The pit density is equal to the number of etch pits across the field of view divided by the field of view. Germanium single crystal wafers mainly have 0 °, (100) partial (111) 6 ° and (100) partial (111) 9 ° three kinds, the dislocation images are shown in Figure 1, Figure 2, Figure 3. Fig. 1 0 °.200 × Fig. 2 (100) Partial (111) 6 °.200 × Figure 3 (100) Partial (111) 9 °.200 × ......

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