GB/T 31092-2022 English PDFUS$279.00 · In stock
Delivery: <= 3 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 31092-2022: Monocrystalline sapphire bar Status: Valid GB/T 31092: Historical versions
Basic dataStandard ID: GB/T 31092-2022 (GB/T31092-2022)Description (Translated English): Monocrystalline sapphire bar Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: H83 Classification of International Standard: 29.045 Word Count Estimation: 14,125 Date of Issue: 2022-12-30 Date of Implementation: 2023-07-01 Older Standard (superseded by this standard): GB/T 31092-2014 Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration GB/T 31092-2022: Monocrystalline sapphire bar---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.ICS 29.045 CCSH83 National Standards of People's Republic of China Replacing GB/T 31092-2014 Sapphire single crystal ingot Posted on 2022-12-30 2023-07-01 implementation State Administration for Market Regulation Released by the National Standardization Management Committee forewordThis document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1.Structure and Drafting Rules for Standardization Documents" drafting. This document replaces GB/T 31092-2014 "Sapphire Single Crystal Ingot". Compared with GB/T 31092-2014, except for structural adjustment and In addition to editorial changes, the main technical changes are as follows. a) The scope of application has been changed (see Chapter 1, Chapter 1 of the.2014 edition); b) Changed the definition of "sapphire single crystal" (see 3.1, 3.1 of the.2014 edition), and added "sapphire single crystal rod" and "reference groove" Definition (see 3.2, 3.3), delete the definition of "total length" of "sapphire crystal ingot" (see 3.2, 3.3 of the.2014 edition); c) Changed the requirements for crystal quality (see 4.2, 4.2 of the.2014 edition); d) Figure 1 (see 4.4.1 of the.2014 edition) and Figure 2 (see 4.4.2 of the.2014 edition) are deleted; e) Changed the requirements for bar size and allowable deviation (see 4.4.1, 4.5 of the.2014 edition); f) The requirements for the dimensions and allowable deviation of the reference groove (see 4.4.2) and the structural diagram of the reference groove (see Figure 1) are added; g) Added size requirements for blocks (see 4.4.3); h) Changed the requirements for transmittance (see 4.6, 4.7 of the.2014 edition); i) Changed the total impurity content, crystal quality, surface orientation and main reference plane orientation, size and tolerance, mosaic, twinning and transmission Test method of rate (see Chapter 5, Chapter 5 of the.2014 edition); j) The content of the logo has been changed (see 7.1, 7.1 of the.2014 edition); k) Added the content of the accompanying file (see 7.4). Please note that some contents of this document may refer to patents. The issuing agency of this document assumes no responsibility for identifying patents. This document is prepared by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standard It is jointly proposed and managed by the Materials Subcommittee (SAC/TC203/SC2) of the Chemical Technology Committee. This document is drafted by. Tiantong Yinxia New Materials Co., Ltd., Tiantong Holdings Co., Ltd., Nonferrous Metal Technology and Economic Research Institute Co., Ltd., Zhejiang Jingrui Electronic Materials Co., Ltd., Abbott (Fujian) New Materials Co., Ltd., Shanghai Optical Precision Machinery Co., Ltd., Chinese Academy of Sciences Machinery Research Institute, Harbin Orient Photoelectric Technology Co., Ltd., Shandong Hengjing New Materials Co., Ltd., Shanxi Huajing Hengji New Materials Co., Ltd., Chongqing Silian Photoelectric Technology Co., Ltd., Suzhou Hengjia Crystal Material Co., Ltd., Tongliao Seiko Sapphire Co., Ltd., Yiwu Limai New Materials Ltd. The main drafters of this document. Kang Sen, Lu Yarong, Teng Bin, Shao Feng, Li Suqing, Song Yanyan, Zhang Qin, He Dongjiang, Hang Yin, Shi Gang, Zuo Hongbo, Yang Xinhong, Xu Yongbin, Kuang Guangning, Zhao Wei, Xu Yongliang, Yan Dianjun, Fu Ping, Huang Deyin. This document was first published in.2014, and this is the first revision. Sapphire single crystal ingot1 ScopeThis document specifies the technical requirements, test methods, inspection rules, marks, packaging, transportation, storage, and accompanying documents of sapphire single crystal ingots. and order form. This document applies to substrates and sapphire single crystal ingots for optical purposes (hereinafter referred to as "ingots").2 Normative referencesThe contents of the following documents constitute the essential provisions of this document through normative references in the text. Among them, dated references For documents, only the version corresponding to the date is applicable to this document; for undated reference documents, the latest version (including all amendments) is applicable to this document. GB/T 1958 Product Geometric Specifications (GPS) Geometric Tolerance Testing and Verification GB/T 7962.12 Test methods for colorless optical glass - Part 12.Inner spectral transmittance GB/T 14264 Terminology of semiconductor materials GB/T 31093 Sapphire Ingot Stress Test Method GB/T 33236 Chemical Analysis of Trace Elements in Polycrystalline Silicon Glow Discharge Mass Spectrometry GB/T 33763 Sapphire Single Crystal Dislocation Density Measurement Method GB/T 34210 Method for determination of crystallographic orientation of sapphire single crystal GB/T 34612 Sapphire Crystal X-ray Twin Crystal Diffraction Rocking Curve Measurement Method3 Terms and DefinitionsThe following terms and definitions defined in GB/T 14264 apply to this document. 3.1 An artificially grown α-type alumina single crystal with a definite crystal orientation. 3.2 The sapphire single crystal grown according to a specific axis can meet the requirements of the buyer after machining. 3.3 Reference slot notch A groove of a specified shape and size machined on a boule with a diameter through the center of the groove parallel to a specified low-index crystallographic direction.4 Technical Requirements4.1 Total impurity content The total content of impurity elements Li, Na, Mg, Si, Ca, Ti, V, Cr, Fe, Co, Nb, Cu, Ga, Mo, W in crystal bar should be less than 100mg/kg. ......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 31092-2022_English be delivered?Answer: Upon your order, we will start to translate GB/T 31092-2022_English as soon as possible, and keep you informed of the progress. 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Otherwise, follow the normal steps: Add to Cart -- Checkout -- Select your currency to pay.Question 5: Should I purchase the latest version GB/T 31092-2022?Answer: Yes. Unless special scenarios such as technical constraints or academic study, you should always prioritize to purchase the latest version GB/T 31092-2022 even if the enforcement date is in future. Complying with the latest version means that, by default, it also complies with all the earlier versions, technically. |