GB/T 30656-2023 English PDFUS$359.00 ยท In stock
Delivery: <= 4 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 30656-2023: Polished monocrystalline silicon carbide wafers Status: Valid GB/T 30656: Historical versions
Basic dataStandard ID: GB/T 30656-2023 (GB/T30656-2023)Description (Translated English): Polished monocrystalline silicon carbide wafers Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: H83 Classification of International Standard: 29.045 Word Count Estimation: 18,196 Date of Issue: 2023-03-17 Date of Implementation: 2023-10-01 Older Standard (superseded by this standard): GB/T 30656-2014 Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration GB/T 30656-2023: Polished monocrystalline silicon carbide wafers---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.ICS29:045 CCSH83 National Standards of People's Republic of China Replacing GB/T 30656-2014 Silicon carbide single crystal polished wafer Released on 2023-03-17 2023-10-01 implementation State Administration for Market Regulation Released by the National Standardization Management Committee forewordThis document is in accordance with the provisions of GB/T 1:1-2020 "Guidelines for Standardization Work Part 1: Structure and Drafting Rules for Standardization Documents" drafting: This document replaces GB/T 30656-2014 "Silicon Carbide Single Crystal Polished Sheet": Compared with GB/T 30656-2014, except for structural adjustment and Apart from editorial changes, the main technical changes are as follows: a) The scope of application has been changed (see Chapter 1, Chapter 1 of the:2014 edition); b) Changed the terms and definitions (see Chapter 3, Chapter 3 of the:2014 edition); c) Added classification by diameter 150:0mm (see 4:2:3); d) The technical requirements for silicon carbide single crystal polished wafers with a diameter of 150:0mm have been added (see Chapter 5); e) The thickness and allowable deviation of semi-insulating silicon carbide single crystal polished wafers with a diameter of 100:0mm have been added (see 5:2); f) Changed the requirements for total thickness variation (see 5:2, 4:5 of the:2014 edition); g) The requirement for local thickness variation is added (see 5:2); h) The warpage and curvature requirements for silicon carbide single crystal polished wafers with a diameter of 100:0 mm have been changed (see 5:2, 4:5 of the:2014 edition); i) The requirements for resistivity have been changed (see 5:5, 4:10 of the:2014 edition); j) Changed the requirements for microtubule density (see 5:6, 4:8 of the:2014 edition); k) Added the requirements for the dislocation density of industrial-grade conductive silicon carbide single crystal polished wafers (see 5:7); l) The requirements for cracks, hexagonal voids, and pits visible to the naked eye in the surface quality have been changed (see 5:10, 4:7 of the:2014 edition); m) The requirements for chipping are added (see 5:10); n) Added the content of usable area ratio and detection surface in surface quality (see the footnote of Table 9 in 5:10); o) Changed the requirements for surface roughness (see 5:11, 4:5 of the:2014 edition); p) The test method has been changed (see Chapter 6, Chapter 5 of the:2014 edition); q) The requirements for batching and sampling have been changed (see 7:2, 7:3, 6:2, 6:3 of the:2014 edition); r) Added inspection items (see 7:3); s) Changed the determination of inspection results (see 7:4, 6:4 of the:2014 edition); t) The content of the logo has been changed (see 8:1, 7:1 of the:2014 edition); u) Changed the contents of accompanying documents (see 8:5, 7:4 of the:2014 edition); v) Changed the content of diameter, crystal orientation angle and thickness in the method of designation (see Appendix A, Appendix A of the:2014 edition); w) The detection method of the rocking curve is deleted (see Appendix B of the:2014 edition); x) Added the test steps of Raman scattering method (see B:4:2): Please note that some contents of this document may refer to patents: The issuing agency of this document assumes no responsibility for identifying patents: This document is prepared by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standard It is jointly proposed and managed by Materials Subcommittee (SAC/TC203/SC2) of Chemical Technology Committee: This document was drafted by: Beijing Tianke Heda Semiconductor Co:, Ltd:, Institute of Physics, Chinese Academy of Sciences, Nanjing Guosheng Electronics Co:, Ltd: Company, Anhui Changfei Advanced Semiconductor Co:, Ltd:, Nonferrous Metal Technology and Economic Research Institute Co:, Ltd: The main drafters of this document: Chen Xiaolong, Peng Tonghua, She Zongjing, Wang Bo, Liu Chunjun, Li Suqing, Guo Yu, Lou Yanfang, Zheng Hongjun, Yang Jian, Luo Hong and Niu Yingxi: This document was first published in:2014, and this is the first revision: Silicon carbide single crystal polished wafer1 ScopeThis document specifies the grades and classifications, technical requirements, test methods, inspection rules, marks, Packaging, transportation, storage, accompanying documents and order form contents: This document is applicable to the silicon carbide single crystal light sheet:2 Normative referencesThe contents of the following documents constitute the essential provisions of this document through normative references in the text: Among them, dated references For documents, only the version corresponding to the date is applicable to this document; for undated reference documents, the latest version (including all amendments) is applicable to this document: GB/T 1555 Method for Determination of Crystalline Orientation of Semiconductor Single Crystals GB/T 2828:1-2012 Counting sampling inspection procedure Part 1: Batch-by-batch inspection sampling retrieved by acceptance quality limit (AQL) plan GB/T 6616 Non-contact eddy current method for testing the resistivity of semiconductor silicon wafers and the sheet resistance of silicon thin films GB/T 6624 Visual inspection method for surface quality of silicon polished wafers GB/T 13387 Silicon and other electronic material wafer reference plane length measurement method GB/T 13388 X-ray test method for crystallographic orientation of silicon wafer reference plane GB/T 14264 Terminology of semiconductor materials GB/T 25915:1-2021 Clean rooms and related controlled environments Part 1: Classification of air cleanliness by particle concentration GB/T 26067 Test method for notch size of silicon wafer GB/T 29505 Surface Roughness Measurement Method for Silicon Wafer Flat Surface GB/T 30866 Test method for silicon carbide single wafer diameter GB/T 30867 Test method for silicon carbide single wafer thickness and total thickness change GB/T 31351 Non-destructive testing method for micropipe density on silicon carbide single crystal polished wafers GB/T 32188 Gallium Nitride Single Crystal Substrate X-ray Dual Crystal Rocking Curve FWHM Test Method GB/T 32278 Test method for flatness of silicon carbide single wafer GB/T 42271 Non-contact test method for resistivity of semi-insulating silicon carbide single crystal GB/T 41765 Test method for dislocation density of silicon carbide single crystal3 Terms and DefinitionsGB/T 14264, GB/T 32278 and the following terms and definitions apply to this document: 3:1 4H silicon carbide 4Hsiliconcarbide 4H-SiC The Si-C biatomic layer composed of Si atoms and C atoms has three different stacking modes: A, B, and C: The < 0001 > direction is periodically stacked in the "ABCBABCB" sequence, thus forming a silicon carbide crystal: ......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 30656-2023_English be delivered?Answer: Upon your order, we will start to translate GB/T 30656-2023_English as soon as possible, and keep you informed of the progress. 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Otherwise, follow the normal steps: Add to Cart -- Checkout -- Select your currency to pay.Question 5: Should I purchase the latest version GB/T 30656-2023?Answer: Yes. Unless special scenarios such as technical constraints or academic study, you should always prioritize to purchase the latest version GB/T 30656-2023 even if the enforcement date is in future. Complying with the latest version means that, by default, it also complies with all the earlier versions, technically. |
