GB/T 29844-2013 English PDF

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GB/T 29844-2013: Specifications of metrology patterns for the evaluation of advanced photolithography
Status: Valid

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Basic data

Standard ID: GB/T 29844-2013 (GB/T29844-2013)
Description (Translated English): Specifications of metrology patterns for the evaluation of advanced photolithography
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: L90
Classification of International Standard: 31.030
Word Count Estimation: 11,187
Quoted Standard: GB/T 16878-1997; SJ/T 10584-1994
Regulation (derived from): National Standards Bulletin No. 22 of 2013
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary: This standard specifies: a photolithography process for advanced integrated circuits integrated assessment standard test graphics unit the shape, the general size, and recommendations layout and design rules, these standards test patterns include availabl

GB/T 29844-2013: Specifications of metrology patterns for the evaluation of advanced photolithography

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Specifications of metrology patterns for the evaluation of advanced photolithgraphy ICS 31.030 L90 National Standards of People's Republic of China Integrated circuits for advanced lithography process integrated Graphic evaluation norms Issued on. 2013-11-12 2014-04-15 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

This standard was drafted in accordance with GB/T 1.1-2009 given rules. Please note that some of the content of this document may involve patents. Release mechanism of the present document does not assume responsibility for the identification of these patents. The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and focal points. This standard was drafted. Shanghai Hua Hong NEC Electronics Co., Ltd. The main drafters of this standard. Wang Lei, Wu Qiang, Jun Zhu, Chen Baoqin. Integrated circuits for advanced lithography process integrated Graphic evaluation norms

1 Scope

This standard specifies the form of integrated circuits for advanced lithography process a comprehensive assessment of the standard test pattern units, general size, as well as push Recommended layout and design rules, these standards include test patterns for optical microscopy and scanning electron microscopy with a variety of graphical elements. Technology, conventional reticle, photoresist and lithography characteristics and the capacity of the standard of review applicable to integrated circuits and alternating phase shift Phase measurement reticle for the g-line, i-ray, KrF, ArF, etc. of the lithographic apparatus and the corresponding wavelength photolithography process.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein Member. For undated references, the latest edition (including any amendments) applies to this document. GB/T 16878-1997 Specification for detecting the graphics unit integrated circuit manufacturing technology SJ/T 10584-1994 microelectronics photomask technical terms

3 Terms and Definitions

GB/T 16878-1997 and SJ/T 10584-1994 define the following terms and definitions apply to this document. 3.1 Mask error factor maskerrorfactor; MEF When the graphic reticle is transferred onto a silicon wafer, the silicon graphics linewidth partial derivatives of the reticle linewidth. NOTE. Factors Affecting mask error factor of the exposure conditions, the performance of the photoresist, lithography lens aberrations, after baking temperature. Much larger than the wavelength of the exposure in FIG. Shaped mask error factor is usually very close to 1. Close to or smaller than the wavelength of the pattern, mask error factor will increase significantly. The alternating Phase-shift lithography reticle lines can produce significantly smaller than 1 mask error factor. In the optical proximity effect correction in the fine structure of the compensation will be near Significantly less than one. 3.2 Phase shift reticle phaseshiftmask Produced in different regions of the photomask specific optical thickness, so that the light phase difference through different regions in order to achieve greater Image contrast and the lithographic process window of the reticle. 3.3 Off-axis illumination off-axisilumination To further enhance the resolution of the lithographic projection lithography machine, so that the illumination beam to deviate from the direction of the lens axis of symmetry oblique incident illumination method. 3.4 Light acid molecule effective diffusion length effectivediffusionlengthofphoto-generatedacid Chemically amplified photoresist after the exposure of the baked PSII acid molecules randomly diffuse the photoresist polymers formed expanded Powder length. 3.5 Alternating phase shift mask alternatingphaseshiftingmask By a conventional light transmission area and enables light to produce a 180 ° phase shift of the phase shifter quartz zones alternately arranged phase-shifting mask, also known Levenson ......

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