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GB/T 29507-2013: Test method for measuring flatness, thickness and total thickness variation on silicon wafers -- Automated non-contact scanning
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GB/T 29507-2013: Test method for measuring flatness, thickness and total thickness variation on silicon wafers -- Automated non-contact scanning

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Test method for measuring flatness, thickness and total thickness vsriation on silicon wafers. Automated non-contact scanning ICS 29.045 H80 National Standards of People's Republic of China Change test wafer flatness, thickness and total thickness Automatic non-contact scanning Testmethodformeasuringflatness, thicknessandtotalthicknessvariation Issued on. 2013-05-09 2014-02-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

This standard was drafted in accordance with GB/T 1.1-2009 given rules. The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and focal points. This standard was drafted. Shanghai co-crystal silicon Material Co., Ltd. has semiconductor materials research. The main drafters of this standard. Xu Xinhua, Wang Zhen, Sun Yan, Cao Zi. Change test wafer flatness, thickness and total thickness Automatic non-contact scanning

1 Scope

This standard specifies the diameter of not less than 50mm, thickness not less than cutting, grinding 100μm, the corrosion, polishing, epitaxial or other surfaces Wafer flatness state test thickness and total thickness variation. The standard non-destructive, non-contact automatic scan test method for clean, dry wafer flatness and thickness of the test, and not By the thickness variation of the silicon wafer, the silicon wafer surface state influence and shape.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein Member. For undated references, the latest edition (including any amendments) applies to this document. GB/T 14264 semiconductor material terms

3 Terms and Definitions

3.1 GB/T 14264 define the terms and definitions apply to this document. 3.2 Definitions and abbreviations wafer flatness parameters in Table 1. Abbreviations 1 wafer flatness parameters and definitions abbreviation test method Datum plane Datum plane Plane constituting regions Test parameters GB IR (Globalflatnessbacksidereferenceplane idealrange) The total surface of the back over the back surface quality Eligible area TIR GF3R (Globalflatnessfrontsidereferenceplane 3pointsrange) Plane TIR total of three elements to form the front surface GF3D (Globalflatnessfrontsidereference3 pointsdeviation) Datum FPD total front surface composed of three GFLR (Globalflatnessfrontsidereferenceplane least-squaresrange) The total surface plane being constituted least squares quality Eligible area TIR ...