GB/T 29332-2012 English PDF

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GB/T 29332-2012: Semiconductor devices -- Discrete devices -- Part 9: Insulated-gate bipolar transistors (IGBT)
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GB/T 29332-2012	1094	Add to Cart	3 days	Semiconductor devices -- Discrete devices -- Part 9: Insulated-gate bipolar transistors (IGBT)	Valid

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Basic data

Standard ID: GB/T 29332-2012 (GB/T29332-2012)
Description (Translated English): Semiconductor devices -- Discrete devices -- Part 9: Insulated-gate bipolar transistors (IGBT)
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: L42
Classification of International Standard: 31.080.01; 31.080.30
Word Count Estimation: 55,561
Quoted Standard: IEC 60747-1-2006; IEC 60747-2; IEC 60747-6; IEC 61340-2-1; IEC 61340-2-3; IEC 61340-3-1; IEC 61340-3-2; IEC 61340-4-10; IEC 61340-4-1; IEC 61340-4-3; IEC 61340-4-4; IEC 61340-4-5; IEC 61340-4-6; IEC 61340-4-7; IEC 61340-4-8; IEC 61340-4-9; IEC 61340-5-1;
Adopted Standard: IEC 60747-9-2007, IDT
Regulation (derived from): National Standards Bulletin No. 41 of 2012
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary: This standard specifies the insulated gate bipolar transistor (IGBT) terminology, text symbols, essential ratings and characteristics and test methods, product-specific requirements.

GB/T 29332-2012: Semiconductor devices -- Discrete devices -- Part 9: Insulated-gate bipolar transistors (IGBT)

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Semiconductor devices Discrete devices Part 9. Insulated-gate bipolar transistors (IGB T) ICS 31.080.01; 31.080.30 L42 National Standards of People's Republic of China Semiconductor devices Discrete devices Part 9. insulated gate bipolar transistor (IGB T) Part 9. Insulated-gatebipolartransistors (IGB T) (IEC 60747-9.2007, IDT) Issued on. 2012-12-31 2013-06-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Table of Contents

Introduction Ⅴ 1 Scope 1 2 Normative references 1 3 Terms and definitions Graphics 3.1 IGB T symbol 1 3.2 General terms 1 3.3 ratings and characteristics of voltage and current terminology 2 Other features 3.4 term ratings and characteristics of 4 4 text symbols 6 4.1 General 6 General 4.2 supplement standard 6 4.3 6 text symbols 5 Essential ratings and characteristics 7 5.1 rating (limit) 7 5.2 Features 8 6 Test Method 10 6.1 General 10 6.2 rating (limit) Test 11 6.3 Measurement 19 7 receives and reliability 34 7.1 General 34 34 7.2 Special Requirements 7.3 type test and routine test 37 Appendix A (normative) collector - emitter breakdown voltage test 39 Appendix B (normative) under specified conditions, inductive load current shut-off Test Method 41 Annex C (normative) forward biased safe operating area FBSOA 43 Annex D (normative) shell is not broken 47 References 48 1 collector - emitter voltage VCES, VCER, VCEX test circuit 11 Figure 2 gate - emitter voltage test circuit 12 ± VGES Figure 3 collector current of the test circuit 13 Figure 4 Collector peak current test circuit 14 5 reverse bias safe operating area (RBSOA) test circuit 14 Figure 6 gate turn-off period - emitter voltage VGE and the collector current IC waveform 15 Figure 7 load short-circuit (SCSOA1), safety test pulse width circuit 16 Load short-circuit gate 8 (SCSOA1) period - emitter voltage VGE, collector current IC and the collector voltage VCE waveform 16 9 short circuit safe operating area 2 (SCSOA2) test circuit 17 10 SCSOA2 waveforms during 18 11 collector - emitter sustaining voltage VCE * sus measuring circuit 19 Running track 12 of the collector current 20 Figure 13 collector - emitter saturation voltage measuring circuit 21 VCEsat Figure 14 gate - emitter threshold voltage of the basic measuring circuit 21 15 Collector cutoff current measuring circuit 22 Figure 16 gate leakage current measuring circuit 23 17 input capacitance measuring circuit 24 18 output capacitance measuring circuit 25 19 reverse transfer capacitance measurement circuit 26 Figure 20 gate charge measurement circuit 26 21 gate charge basic waveform 27 22 short-circuit gate resistance measuring circuit 28 Each time interval during the opening 23 and the opening of energy measurement circuit 29 Current, the voltage waveform 24 during the opening 29 25 shut off during each time interval and off the energy measurement circuit 30 Current, the voltage waveform 26 during the OFF period 30 27 small measure under current IC1 VCE varies with temperature and large current IC2 heating device under test DUT measurement circuit 31 Under 28 with small measuring current IC1 VCE case temperature Tc (external heating, i.e. when Tc = Tj) of typical variations 32 29 thermal resistance and transient thermal impedance measurement circuit (Method 2) 33 30 small measure under current IC1 VGE (th) with case temperature Tc (external heating, i.e. when Tc = Tj) of typical variations 33 Diagram 31 IC, VGE and Tc and time 34 32 high-temperature blocking test circuit 35 Figure 33 Test temperature gate bias circuit 36 Figure 34 intermittent life test circuit 36 35 cycles desired relationship with the temperature of 37 ΔTj Figure A.1 collector - emitter breakdown voltage test circuit 39 Figure B.1 inductive load off current test circuit 41 Figure B.2 During the shutdown, the collector current IC and the collector voltage VCE waveform 41 Figure C.1 FBSOA test circuit (1) 43 Figure C.2 ΔVCE collector - emitter voltage VCE typical characteristic 44 Figure C.3 typical FBSOA 44 Figure C.4 FBSOA test circuit (Method 2) 45 Figure C.5 lock mode waveform 45 Figure C.6 lockout mode voltage characteristic 45 Table 1 Characteristics of 11 received judgment Table 2 Durability and reliability test reception characteristic determination 35 Table 3 Minimum type test and routine test item (if applicable) 37

Foreword

"Semiconductor devices Discrete devices" national standards are expected structure as follows. --- Part 1. General (GB/T 17573-1998, idt IEC 60747-1. 1983); --- Part 2. Rectifier diodes (GB/T 4023-1997, eqv IEC 60747-2. 1983 and its amendments 1.1992 and amendments Case 2.1993); --- Part 3. Signal (including switching) and regulator diodes (GB/T 6571-1995, idt IEC 60747-3. 1985); --- Part 4. Microwave Devices (GB/T 20516-2006, IEC 60747-4.2001, IDT); --- Part 5-1. Optoelectronic devices - General (IEC 60747-5-1.2002); --- Part 6. Thyristors (GB/T 15291-1994, eqv IEC 60747-6. 1983 and its amendments 1.1991); --- Part 7. Bipolar transistors (GB/T 4587-1994, idt IEC 60747-7. 1988); --- Part 8. Field Effect Transistor (GB/T 4586-1994, idt IEC 60747-8. 1984); --- Part 9. Insulated Gate Bipolar Transistors (IEC 60747-9.2007); --- Part 10. Generic specification for discrete devices and integrated circuits (GB/T 4589.1-2006, IEC 60747-10.1991, IDT); --- Part 11. Sectional specification for discrete devices (GB/T 12560-1999, idt IEC 60747-11. 1985); --- Part 14-1. Semiconductor sensors - General and classification (GB/T 20521-2006, IEC 60747-14-1.2000, IDT); --- Part 15. Insulation of power semiconductor devices (IEC 60747-15.2010); --- Part 17. Basic and reinforced insulation of magnetic and capacitive coupling (IEC /PAS60747-17.2011). The standard is "Semiconductor devices Discrete devices" Part 9 the national standards. This standard was drafted in accordance with GB/T 1.1-2009 given rules. This standard uses the translation method is equivalent to using IEC 60747-9.2007 "Semiconductor devices Discrete devices Part 9. insulated gate bipolar transistor Transistor. " Correspondence between the consistency of the standards of international documents and normative references of the following documents. --- GB/T 4023-1997 discrete devices and integrated circuits of semiconductor devices - Part 2. Rectifier diodes (Eqv IEC 60747-2. 1983 and its amendments 1.1992 and Amendment 2.1993) --- GB/T 15291-1994 semiconductor devices Part 6. Thyristors (eqv IEC 60747-6. 1983 and its amendments 1. 1991) --- GB/T 17573-1998 semiconductor devices - Part 1. General (idt IEC 60747-1. 1983) This standard made the following editorial changes and corrections. --- 3.2.5,3.2.6 and 3.2.7 define three terms, when the word "end" after the increase "(electrode)" word; --- Junction temperature of text symbols Tvj unified Tj; --- Gate - emitter voltage of the second subscript unified as "E"; --- "Predetermined condition", the position of the temperature conditions of unity for the column item 1; --- (Test) device Abbreviations DUT in place to highlight the corresponding IGB T measured by the test (test) of the device; --- 6.3.1.7, the supplemental voltage of the missing text symbols VCEXsus; --- Increase in the following description in 6.3.6.3. "One, yie --- small signal common emitter short-circuit input admittance; yoe --- small signal common emitter short-circuit output admittance "; --- 6.3.6.5,6.3.7.5 and 6.3.8.5, the supplemental measurement frequency of text symbols f; --- 6.3.10.3 in, "| yie | »ωC1" corrected to "ωC1» | yie |", "| yos | »ωC2" corrected to "ωC2» | yoe |"; --- 30 in the figure caption "IC2" corrected to "IC1"; --- A.4, the column item 2 of the following three items listed by two column item processing. The standard proposed by the Ministry of Industry and Information Technology of the People's Republic of China. This standard by the National Standardization Technical Committee of the semiconductor device (SAC/TC78) centralized. Ltd., Weihai new best Electronics Co., Ltd., Jiangsu-Hong-Technology Co., Ltd. The main drafters of this standard. red Wei, Zhang, Chen Ziying, NIE even wave, Wang Po, Qin Yin full. Semiconductor devices Discrete devices Part 9. insulated gate bipolar transistor (IGB T)

1 Scope

This standard gives the terminology insulated gate bipolar transistor (IGB T), text symbols, essential ratings and characteristics and test methods yield Product specific requirements.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein Member. For undated references, the latest edition (including any amendments) applies to this document. IEC 60747-1.2006 Semiconductor devices - Part 1. General (Semiconductordevices-Part 1. General) IEC 60747-2 Semiconductor devices - Discrete devices and integrated circuits - Part 2. Rectifier diodes (Semiconductor devices-Discretedevicesandintegratedcircuits-Part 2. Rectifierdiodes) IEC 60747-6 Semiconductor devices Part 6. Thyristors (Semiconductordevices-Part 6. Thyristors) IEC 61340 (all parts) static (Electrostatics)

3 Terms and Definitions

The following terms and definitions apply to this document. Graphics 3.1 IGB T symbol This standard graphic symbols as follows. Note. This standard uses only N-channel graphics IGB T symbols. This standard also applies to the P-channel device, but must make the appropriate polarity. 3.2 General terms 3.2.1 Insulated Gate Bipolar Transistor insulated-gatebipolartransistor; IGB T And a conduction channel having a PN junction, and the current flowing through the current channel and the junction voltage is applied between the gate terminal and the emitter terminal of the resulting Field control transistor. NOTE. applying a collector - emitter voltage, PN forward bias became. ......

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