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GB/T 19444-2025 English PDF

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US$209.00 · In stock
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GB/T 19444-2025: Test method for oxygen precipition characteristics of silicon wafers - Interstitial oxygen reduction
Status: Valid

GB/T 19444: Historical versions

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 19444-2025	209	Add to Cart	3 days	Test method for oxygen precipition characteristics of silicon wafers - Interstitial oxygen reduction	Valid
GB/T 19444-2004	134	Add to Cart	3 days	Oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction	Valid

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Basic data

Standard ID: GB/T 19444-2025 (GB/T19444-2025)
Description (Translated English): Test method for oxygen precipition characteristics of silicon wafers - Interstitial oxygen reduction
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H21
Classification of International Standard: 77.040
Word Count Estimation: 10,117
Date of Issue: 2025-06-30
Date of Implementation: 2026-01-01
Older Standard (superseded by this standard): GB/T 19444-2004
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration

GB/T 19444-2025: Test method for oxygen precipition characteristics of silicon wafers - Interstitial oxygen reduction

---This is an excerpt. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.), auto-downloaded/delivered in 9 seconds, can be purchased online: https://www.ChineseStandard.net/PDF.aspx/GBT19444-2025
ICS 77.040 CCSH21 National Standard of the People's Republic of China Replaces GB/T 19444-2004 Testing of silicon wafer oxygen precipitation characteristics Interstitial oxygen content reduction method Released on June 30, 2025 Implementation on January 1, 2026 State Administration for Market Regulation The National Standardization Administration issued

Preface

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1.Structure and drafting rules for standardization documents" Drafting. This document replaces GB/T 19444-2004 "Determination of oxygen precipitation characteristics of silicon wafers - Interstitial oxygen content reduction method" and GB/T 19444- Compared with.2004, in addition to structural adjustments and editorial changes, the main technical changes are as follows. a) The scope of application has been changed (see Chapter 1, Chapter 1 of the.2004 edition); b) Added terms and definitions (see Chapter 3); c) The principle of the method has been changed (see Chapter 4, Chapter 3 of the.2004 edition); d) Increased interference factors (see Chapter 5); e) Added test conditions (see Chapter 6); f) The reagents or materials have been changed (see Chapter 7, Chapter 5 of the.2004 edition); g) Added instruments and equipment (see Chapter 8); h) The sample has been changed (see Chapter 9, Chapter 6 of the.2004 edition); i) The test steps have been changed (see Chapter 10, Chapter 7 of the.2004 edition); j) Added test data processing (see Chapter 11); k) The precision has been changed (see Chapter 12, Chapter 10 of the.2004 edition); l) The test report has been changed (see Chapter 13, Chapter 9 of the.2004 edition). Please note that some of the contents of this document may involve patents. The issuing organization of this document does not assume the responsibility for identifying patents. This document was jointly issued by the National Technical Committee on Semiconductor Equipment and Materials Standardization (SAC/TC203) and the National Technical Committee on Semiconductor Equipment and Materials Standardization (SAC/TC203). It is jointly proposed and coordinated by the Materials Subcommittee of the Chemical Technology Committee (SAC/TC203/SC2). This document was drafted by. Maxek Electronic Materials Co., Ltd., Zhejiang Zhongjing Technology Co., Ltd., and Longi Green Energy Technology Co., Ltd. Co., Ltd., Inner Mongolia Zhonghuan Crystal Materials Co., Ltd., Zhejiang Haina Semiconductor Co., Ltd., Shandong Youyan Ace Semiconductor Materials Co., Ltd. Co., Ltd., Zhejiang Jinruihong Technology Co., Ltd., Hangzhou Zhongxin Wafer Semiconductor Co., Ltd., Shanghai Hejing Silicon Materials Co., Ltd. Company, Zhejiang University Ningbo Institute of Technology. The main drafters of this document are. Fang Lixia, Chen Weiqun, Yao Xianpeng, Huang Xiaoxiao, Kou Wenhui, Wang Xinshe, Guo Hongqiang, Liu Lijuan, Xiao Shihao, Zhu Xiaotong, Zhang Haiying, Wang Jianghua, Shang Haibo, and Zhang Jinbing. This document was first published in.2004 and this is the first revision. Testing of silicon wafer oxygen precipitation characteristics Interstitial oxygen content reduction method

1 Scope

This document describes a method for testing the oxygen precipitation characteristics of silicon wafers by measuring the reduction in interstitial oxygen content before and after thermal treatment of the wafers. This document applies to n-type silicon single crystals with room temperature resistivity greater than 0.1Ω·cm and p-type silicon with room temperature resistivity greater than 0.5Ω·cm Testing of oxygen precipitation characteristics of single wafers.

2 Normative references

The contents of the following documents constitute the essential clauses of this document through normative references in this document. For referenced documents without a date, only the version corresponding to that date applies to this document; for referenced documents without a date, the latest version (including all amendments) applies to This document. GB/T 1557-2018 Infrared absorption measurement method for interstitial oxygen content in silicon crystals GB/T 6682 Specifications and test methods for water used in analytical laboratories GB/T 14264 Terminology of Semiconductor Materials

3 Terms and Definitions

The terms and definitions defined in GB/T 14264 and the following apply to this document. 3.1 oxygen precipitation During the crystal growth and subsequent heat treatment stages, oxygen atoms between the lattices react with silicon and other impurities in the silicon crystal to form oxygen deposits. Accumulation of things. 3.2 Initial oxygen content initialoxygencontent Interstitial oxygen content of silicon single wafer without heat treatment process. 3.3 Final oxygen content finaloxygencontent Interstitial oxygen content of silicon single wafer after heat treatment process. 3.4 The difference between the initial oxygen content and the final oxygen content.

4 Principles

The sample was heat treated and the interstitial oxygen content of the sample before and after heat treatment was tested by infrared absorption method. The difference was regarded as The amount of interstitial oxygen precipitation is used to characterize the oxygen precipitation characteristics of the sample. ......

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Tips & Frequently Asked Questions:

Question 1: How long will the true-PDF of GB/T 19444-2025_English be delivered?

Answer: Upon your order, we will start to translate GB/T 19444-2025_English as soon as possible, and keep you informed of the progress. The lead time is typically 1 ~ 3 working days. The lengthier the document the longer the lead time.

Question 2: Can I share the purchased PDF of GB/T 19444-2025_English with my colleagues?

Answer: Yes. The purchased PDF of GB/T 19444-2025_English will be deemed to be sold to your employer/organization who actually pays for it, including your colleagues and your employer's intranet.

Question 3: Does the price include tax/VAT?

Answer: Yes. Our tax invoice, downloaded/delivered in 9 seconds, includes all tax/VAT and complies with 100+ countries' tax regulations (tax exempted in 100+ countries) -- See Avoidance of Double Taxation Agreements (DTAs): List of DTAs signed between Singapore and 100+ countries

Question 4: Do you accept my currency other than USD?

Answer: Yes. If you need your currency to be printed on the invoice, please write an email to Sales@ChineseStandard.net. In 2 working-hours, we will create a special link for you to pay in any currencies. Otherwise, follow the normal steps: Add to Cart -- Checkout -- Select your currency to pay.

Question 5: Should I purchase the latest version GB/T 19444-2025?

Answer: Yes. Unless special scenarios such as technical constraints or academic study, you should always prioritize to purchase the latest version GB/T 19444-2025 even if the enforcement date is in future. Complying with the latest version means that, by default, it also complies with all the earlier versions, technically.