GB/T 1555-2023 English PDF

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GB/T 1555-2023: Test methods for determining the orientation of a semiconductive single crystal
Status: Valid

GB/T 1555: Historical versions

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 1555-2023	189	Add to Cart	3 days	Test methods for determining the orientation of a semiconductive single crystal	Valid
GB/T 1555-2009	319	Add to Cart	3 days	Testing methods for determining the orientation of a semiconductor single crystal	Obsolete
GB/T 1555-1997	319	Add to Cart	3 days	Test methods for determining the orientation of a semiconductor single crystal	Obsolete
GB/T 1555-1979	RFQ	ASK	3 days	Measurement of crystal orientation of monocrystalline silicon by photo-orientation methods	Obsolete

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Basic data

Standard ID: GB/T 1555-2023 (GB/T1555-2023)
Description (Translated English): Test methods for determining the orientation of a semiconductive single crystal
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H21
Classification of International Standard: 77.040
Word Count Estimation: 10,171
Date of Issue: 2023-08-06
Date of Implementation: 2024-03-01
Older Standard (superseded by this standard): GB/T 1555-2009
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration

GB/T 1555-2023: Test methods for determining the orientation of a semiconductive single crystal

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 77.040 CCSH21 National Standards of People's Republic of China Replace GB/T 1555-2009 Semiconductor single crystal crystal orientation determination method Published on 2023-08-06 2024-03-01 Implementation State Administration for Market Regulation Released by the National Standardization Administration Committee

Foreword

This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents" Drafting. This document replaces GB/T 1555-2009 "Method for determination of crystal orientation of semiconductor single crystals". Compared with GB/T 1555-2009, except for structural adjustment In addition to general and editorial changes, the main technical changes are as follows. a) The scope of application of the X-ray diffraction orientation method has been changed (see Chapter 1, Chapter 1 of the.2009 edition); b) Added test conditions (see Chapter 4); c) The principle of the X-ray diffraction orientation method has been changed (see 5.1, Chapter 4 of the.2009 edition); d) Added sample requirements (see 5.4 and 6.4); e) Changed the test data processing (see 5.6, Chapter 14 of the.2009 edition); f) Changed the precision of the X-ray diffraction orientation method (see 5.7, Chapter 15 of the.2009 edition); g) Changed the interference factors of the light pattern orientation method (see 6.2.1, 12.1 of the.2009 edition); h) The grinding materials used in the grinding process have been changed (see 6.4.1, 11.1 of the.2009 edition); i) Changed the corrosion temperature range of silicon single crystal materials (see 6.4.2, 11.2 of the.2009 edition); j) Increased the Bragg angle of some crystal planes of the semiconductor crystal (see Appendix A). Please note that some content in this document may be subject to patents. The publisher of this document assumes no responsibility for identifying patents. This document is sponsored by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standards It was jointly proposed and coordinated by the Materials Sub-Technical Committee of the Chemistry Technical Committee (SAC/TC203/SC2). This document was drafted by. China Electronics Technology Group Corporation No. 46 Research Institute, Nonferrous Metals Technology and Economic Research Institute Co., Ltd. Company, Zhejiang Jinruihong Technology Co., Ltd., Youyan Guojinghui New Materials Co., Ltd., Zhejiang Haina Semiconductor Co., Ltd., Hal Bin Keyou Semiconductor Industry Equipment and Technology Research Institute Co., Ltd., Yunnan Chihong International Germanium Industry Co., Ltd., Beijing Tongmei Crystal Technology Co., Ltd. Co., Ltd., Zhejiang Xusheng Electronics Co., Ltd., China Electronics Technology Group Corporation Thirteenth Research Institute, Dandong New Oriental Crystal Instrument Co., Ltd., GB (Beijing) Inspection and Certification Co., Ltd., New Micron (Suzhou) Semiconductor Technology Co., Ltd. The main drafters of this document. Xu Rong, Liu Lina, Li Suqing, Pang Yue, Ma Chunxi, Zhang Haiying, Lin Quan, Shang Peng, Ma Haoyue, Pan Jinping, Liao Jiwei, Cui Dingfang, Ren Diansheng, Wang Yuanli, Chen Yuehua, Sun Niefeng, Zhao Songbin, Wang Shuming, Li Xiaolan, Shi Yanlei, Zhao Lili, Xia Qiuliang. The previous versions of this document and the documents it replaces are as follows. ---First released in 1979 as GB 1555-1979 and GB 1556-1979; ---The first revision in 1985 was GB 5254-1985 and GB 5255-1985; ---Merged into GB 8759-1988 during the second revision in 1988; ---The third revision in.1997 was GB/T 1555-1997; the fourth revision in.2009; ---This is the fifth revision. Semiconductor single crystal crystal orientation determination method

1 Scope

This document describes methods for determining the crystal orientation of semiconductor single crystals using X-ray diffraction orientation and optical pattern orientation. This document is applicable to the determination of crystal orientation of semiconductor single crystals. The X-ray diffraction orientation method is suitable for the determination of silicon, germanium, gallium arsenide, silicon carbide, oxide The surface orientation of semiconductor single crystal materials such as gallium, gallium nitride, indium antimonide and indium phosphide is roughly parallel to the low-index atomic plane; the light pattern orientation method is suitable for It is used to determine the surface orientation of semiconductor single crystal materials such as silicon and germanium that are roughly parallel to the low-index atomic plane.

2 Normative reference documents

The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to this document. GB/T 2481.1 Detection and marking of abrasive grain size composition for bonded abrasive tools Part 1.Coarse abrasive grains F4~F220 GB/T 2481.2 Detection and marking of abrasive particle size composition for bonded abrasive tools Part 2.Micropowder GB/T 14264 Semiconductor material terminology

3 Terms and definitions

The terms and definitions defined in GB/T 14264 apply to this document.

4 test conditions

Ambient temperature. 23℃±5℃; relative humidity. 20%~75%. 5 X-ray diffraction orientation method 5.1 Principles Single crystal atoms arranged in a three-dimensional periodic crystal structure, the crystal can be regarded as a series of atoms arranged in the spatial interplanar spacing (d) Formed by parallel planes, when a beam of parallel monochromatic X-rays is incident on the plane, and the optical path difference between the X-rays shining on adjacent planes is When the wavelength is an integer (n) times, diffraction (reflection) will occur. Use a counter to detect diffraction lines, and determine the single crystal based on the position where they appear. The schematic diagram of the geometric reflection conditions of X-ray irradiation on a single crystal is shown in Figure 1.When the angle (θ) between the incident beam and the reflecting crystal plane, X When the ray wavelength (λ), interplanar spacing (d) and diffraction order (n) satisfy formula (1) (Bragg's law), the X-ray diffraction beam intensity will reach Maximum value. At this time, the angle between the incident beam and the reflecting crystal plane is the Bragg angle (θB). ......

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