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Delivery: <= 5 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 1553-2023: Test methods for minority carrier lifetime in bulk silicon and germanium - Photoconductivity decay method Status: Valid GB/T 1553: Historical versions
Basic dataStandard ID: GB/T 1553-2023 (GB/T1553-2023)Description (Translated English): Test methods for minority carrier lifetime in bulk silicon and germanium - Photoconductivity decay method Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: H21 Classification of International Standard: 77.040 Word Count Estimation: 30,368 Date of Issue: 2023-08-06 Date of Implementation: 2024-03-01 Older Standard (superseded by this standard): GB/T 1553-2009 Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration GB/T 1553-2023: Test methods for minority carrier lifetime in bulk silicon and germanium - Photoconductivity decay method---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order. ICS 77.040 CCSH21 National Standards of People's Republic of China Replace GB/T 1553-2009 Determination of minority carrier lifetime in silicon and germanium Photoconductivity attenuation method Published on 2023-08-06 2024-03-01 Implementation State Administration for Market Regulation Released by the National Standardization Administration Committee ForewordThis document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents" Drafting. This document replaces GB/T 1553-2009 "Photoconductivity Attenuation Method for Determination of Minority Carrier Lifetime in Silicon and Germanium Body" and is consistent with GB/T 1553- Compared with.2009, in addition to structural adjustments and editorial changes, the main technical changes are as follows. a) Changed the scope (see Chapter 1, Chapter 1 of the.2009 edition); b) Added the definitions of intuitive lifetime, minority carrier lifetime, carrier recombination lifetime, and injection level in terms and definitions (see Section 3 Chapter), deleted the definition of apparent life (see 3.1 of the.2009 edition), changed the definition of body life (see 3.2,.2009 edition of 3.2); c) Among the interference factors, the trap effect, photovoltaic effect, temperature, conductivity amplitude modulation effect, sweep-out effect, wavelength of the light source and Turn-off characteristics, influence of optical filter (see 4.1, 4.4, 4.5, 4.10~4.13,.2009 version of 5.1, 5.4, 5.7, 5.3, 5.6, 5.5, 5.9), adding injection ratio, resistivity, sample surface, sample size, carrier concentration changes, the effect of adding water, and different life measurements The relationship between test methods (see 4.2, 4.3, 4.7, 4.8, 4.14~4.16); d) The method principle has been changed (see 5.1, Chapter 4 of the.2009 edition); e) The grinding materials have been changed (see 5.2.2, 7.1.2 of the.2009 edition); f) Changed the placement of the light source, power supply, and filter (see 5.3.2.1~5.3.2.4, 6.2, 6.3, and 6.5 of the.2009 version), and deleted the constant thermostats, grinding equipment, cleaning and drying equipment (see 6.4, 7.6, and 7.7 of the.2009 edition), and added computers and software systems (see 5.3.2.6); g) Added test conditions (see 5.3.4); h) Changed the temperature requirements in the test steps (see 5.3.5.1, 8.1 of the.2009 edition); i) Changed the precision of the DC photoconductivity attenuation-pulse light method (see 5.3.7, Chapter 11 of the.2009 edition); j) Changed the schematic diagram of the high-frequency photoconductivity test system (see 6.2.1, A.3.1 of the.2009 version); k) Changed the requirements for optical pulse generating devices, optical systems, high-frequency power supplies, and detectors (see 6.2.2.1~6.2.2.4,.2009 edition A.3.2~A.3.5), adding a wide-band amplifier, sampler, oscilloscope or computer and software system test device (see 6.2.2.5~ 6.2.2.7); l) Added sample requirements (see 6.3); m) Added requirements for relative humidity in test conditions (see 6.4); n) Added instrument calibration (see 6.5.2); o) Added quick test method (see 6.5.4); p) Added calculation of injection level (see 6.6.1); q) Changed the precision of the high-frequency photoconductivity attenuation method (see 6.7, Chapter 11 of the.2009 edition); r) Added the relationship between life values obtained by different testing methods (see Appendix B). Please note that some content in this document may be subject to patents. The publisher of this document assumes no responsibility for identifying patents. This document is jointly developed by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standards It was jointly proposed and coordinated by the Materials Sub-Technical Committee of the Chemistry Technical Committee (SAC/TC203/SC2). This document was drafted by. Youyan Semiconductor Silicon Materials Co., Ltd., Nonferrous Metals Technology and Economic Research Institute Co., Ltd., Guangzhou Kunde Semiconductor Testing Technology Co., Ltd., Qinghai Core Testing Technology Co., Ltd., Shaanxi Nonferrous Tianhongruike Silicon Materials Co., Ltd., Zhejiang Haina Semiconductor Co., Ltd., Luoyang China Silicon High-tech Co., Ltd., Jiangsu Zhongneng Silicon Technology Development Co., Ltd., Yichang CSG Silicon Materials Co., Ltd. Co., Ltd., Jiangsu Xinhua Semiconductor Technology Co., Ltd., Asia Silicon Industry (Qinghai) Co., Ltd., Yunnan Lincang Xinyuan Germanium Industry Co., Ltd. Co., Ltd., Yunnan Chihong International Germanium Industry Co., Ltd. The main drafters of this document. Sun Yan, Ning Yongduo, Li Suqing, Zhu Xiaotong, He Dongjiang, Wang Xin, Xue Xinlu, Xu Yan, Pan Jinping, Yan Dazhou, Wang Bin, Cai Yunpeng, Tian Xin, Zhao Peizhi, Ran Shengguo, Han Chengfu, Pu Shikun, Cai Liyan, Gao Yuan, Zhao Jing, Cui Dingfang. The previous versions of this document and the documents it replaces are as follows. ---First published as GB/T 1553-1979 in 1979, first revised in 1985; ---The content of GB 5257-1985 was incorporated into the second revision in.1997 and replaced GB 5257-1985;.2009 Third revision; ---This is the fourth revision. Determination of minority carrier lifetime in silicon and germanium Photoconductivity attenuation method1 ScopeThis document specifies the photoconductance decay of non-equilibrium minority carrier lifetime during carrier recombination in extrinsic silicon single crystals and germanium single crystals. Test Methods. This document is applicable to the testing of non-equilibrium minority carrier lifetime in extrinsic silicon single crystals and germanium single crystals. DC photoconductivity attenuation-pulsed light The method can test cuboid or cylindrical samples with special dimensions. The shortest life of silicon single crystal is 50μs, and the shortest life of germanium single crystal is tested. The life value is 10μs. The high-frequency photoconductivity attenuation method can test rod-shaped or block-shaped samples, and the minimum lifetime value for testing silicon single crystal and germanium single crystal is 10μs. Note. There are two methods of DC photoconductivity attenuation. DC photoconductivity attenuation-pulse light method and DC photoconductivity attenuation-chopper light method (see Appendix A).2 Normative reference documentsThe contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to this document. GB/T 1550 Test method for conductivity type of extrinsic semiconductor materials GB/T 1551 Determination of resistivity of silicon single crystal. direct current four-probe method and direct current two-probe method GB/T 14264 Semiconductor material terminology GB/T 26074 DC four-probe measurement method for resistivity of germanium single crystal3 Terms and definitionsThe terms and definitions defined in GB/T 14264 apply to this document. 3.1 Intuitive life filamentlifetime 1/e life The duration from the end of pulse injection to when the attenuated signal drops to 1/e of the initial signal is visually displayed on the oscilloscope. Note 1.The initial part of the decay curve often does not conform to exponential decay, so the intuitive lifetime determined from the initial part of the decay curve cannot determine the minority carriers Lifetime or carrier recombination life; the measured reported value of the lifespan can correct the intuitive lifespan, that is, the exponential part that appears some time after the decay curve. Determined. Note 2.In the DC photoconductivity attenuation method, the determination of intuitive lifetime refers to the attenuation of the peak value or saturation voltage of the photoconductivity voltage to equal to 1/e of the initial voltage. time. 3.2 bulklifetime When the surface recombination of hole-electron pairs is negligible, it is determined only by the recombination of impurities and defects in the crystal. life. Note. The body lifetime can be the minority carrier lifetime or the carrier recombination lifetime, which is different from the surface lifetime which is mainly surface recombination. Normal life test ......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 1553-2023_English be delivered?Answer: Upon your order, we will start to translate GB/T 1553-2023_English as soon as possible, and keep you informed of the progress. The lead time is typically 3 ~ 5 working days. The lengthier the document the longer the lead time.Question 2: Can I share the purchased PDF of GB/T 1553-2023_English with my colleagues?Answer: Yes. The purchased PDF of GB/T 1553-2023_English will be deemed to be sold to your employer/organization who actually pays for it, including your colleagues and your employer's intranet.Question 3: Does the price include tax/VAT?Answer: Yes. 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