GB/T 1551-2021 English PDFUS$489.00 · In stock
Delivery: <= 5 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 1551-2021: Test method for measuring resistivity of monocrystal silicon - In-line four-point probe and direct current two-point probe method Status: Valid GB/T 1551: Historical versions
Basic dataStandard ID: GB/T 1551-2021 (GB/T1551-2021)Description (Translated English): Test method for measuring resistivity of monocrystal silicon - In-line four-point probe and direct current two-point probe method Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: H21 Word Count Estimation: 26,266 Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration GB/T 1551-2021: Test method for measuring resistivity of monocrystal silicon - In-line four-point probe and direct current two-point probe method---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order. Test method for measuring resistivity of monocrystal silicon-In-line four-point probe and direct current two-point probe method ICS 77.040 CCSH21 National Standards of People's Republic of China Replace GB/T 1551-2009 Determination of resistivity of silicon single crystal Straight four-point probe method and DC two-point probe method Released on 2021-05-21 2021-12-01 implementation State Administration of Market Supervision and Administration Issued by the National Standardization Management Committee ForewordThis document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1.Structure and Drafting Rules of Standardization Documents" Drafting. This document replaces GB/T 1551-2009 "Method for Measuring the Resistivity of Silicon Single Crystals". Compared with GB/T 1551-2009, except for structural adjustments In addition to editorial changes, the main technical changes are as follows. a) The scope of application of the straight four-point probe method has been changed (see Chapter 1, Chapter 1 of the.2009 edition); b) "Scope" has been added "The resistivity test of other ranges of silicon single crystals can be carried out with reference to this document" (see Chapter 1); c) Added normative reference document GB/T 14264 (see Chapter 2); d) Added "Terms and Definitions" (see Chapter 3); e) The requirements of the test environment temperature are changed (see Chapter 4, Chapter 2 and Chapter 13 of the.2009 edition); f) The influence of light on the test results in the "Interference Factors" has been changed (see 5.1, 3.1 and 14.1 of the.2009 edition); g) Added the interference factors of the specific impact of minority carrier injection on the test results (see 5.3); h) The influence of temperature on the test results in "Interference Factors" has been changed (see 5.4, 3.4 and 14.4 of the.2009 edition); i) The interference factors of probe vibration and probe head type affecting the test results have been added (see 5.5, 5.6); j) The interference factors that affect the test results due to the heating of the sample and the contact position of the probe and the sample during the test of the straight four-probe method have been added [see 5.7a), 5.7c)]; k) Added that the sample resistivity is not uniform, there are slight cracks or other mechanical damage, and the conductivity type is not unique when the DC two-probe method is tested. A pair of interference factors affecting the test results (see 5.8); l) Deleted the content of the probe spacing in the DC two-probe method to test interference factors (see 14.6 in the.2009 edition); m) The test principle of the straight four-point probe method is changed (see Chapter 6.1, Chapter 4 of the.2009 edition); n) Added "reagents and materials" in the straight four-probe method (see 6.2); o) The requirements for the shape of the needle tip and the initial nominal radius in the straight four-point probe method have been changed [see 6.3.1a), 5.1.1 of the.2009 edition; p) The standard resistance requirements in the straight four-point probe method have been changed [see 6.3.2c), 5.2.4 of the.2009 edition; q) The requirements of the radiator in the straight four-point probe method are changed (see 6.3.4, 5.4 in the.2009 edition); r) The requirements of the sample preparation device in the straight four-probe method are changed (see 6.3.5, 5.5 in the.2009 edition); s) The requirements of the thickness tester in the straight four-point probe method are changed (see 6.3.6, 5.6 in the.2009 edition); t) The requirements for ultrasonic cleaners and chemical laboratory appliances in the straight four-probe method have been deleted (see 5.13 and 5.14 in the.2009 edition); u) The description of the sample surface treatment in the straight four-probe method is changed (see 6.4.1, 6.1 of the.2009 edition); v) Added the recommended test current value of wafer samples corresponding to samples with resistivity greater than 3000Ω·cm (see Table 2,.2009 edition of the table 2); w) Deleted the test currents corresponding to samples with different resistivities (see Table 2 in the.2009 edition); x) The requirements for electrical testing devices in the straight four-point probe method are changed (see 6.5.1.6, 7.1.6 in the.2009 edition); y) The requirements for materials used to determine the probe spacing in the straight four-point probe method are changed (see 6.5.2.1, 7.2.1 in the.2009 edition); z) Deleted the process of sample cleaning and drying in the straight four-probe method test (see 7.3.1 of the.2009 edition); aa) Deleted the special requirements for wafer specimens in the straight four-point probe test (see 7.3.2 and 7.3.3 of the.2009 edition); bb) Deleted the requirements for the position of the probe array when testing the wafer by the in-line four-probe method (see 7.3.4 in the.2009 edition); cc) The requirements for the number of groups measured by the straight four-probe method have been changed (see 6.5.3.7, 7.3.8 in the.2009 edition); dd) Changed the content of the test precision of the straight four-point probe method (see 6.7, Chapter 9 of the.2009 edition); ee) The test principle of the in-line four-probe method has been changed (see Chapter 7.1, Chapter 15 of the.2009 edition); ff) Deleted the acetone and ethanol in the "reagent" of the DC two-probe method (see 16.2 and 16.3 in the.2009 edition); gg) The requirements for ohmic contact materials and abrasives in the DC two-probe method have been changed (see 7.2.2, 7.2.3, 16.4 and 16.5 in the.2009 edition); hh) The requirement for microscope magnification in the DC two-probe method has been added (see 7.3.5); i) Deleted the chemical laboratory equipment in the DC two-probe method (see 17.7 in the.2009 edition); j) Deleted the requirements for crystal conductivity type in the "sample preparation" of the DC two-probe method (see 18.1 in the.2009 edition); kk) Changed the test conditions of the DC two-probe method on the second measurement channel (see 7.4.2, 7.5.3.10, 18.2,.2009 edition 19.3.10); l) The description of the sample surface treatment in the DC two-probe method is changed (see 7.4.3, 7.4.4, 18.3 and 18.4 in the.2009 edition); mm) Changed the requirement of the simulated resistance average value Ra in the suitability check of the DC two-probe test equipment (see 7.5.2.2,.2009 edition 19.2.2.3); nn) The content of the precision of the DC two-probe method is changed (see Chapter 7.7, Chapter 21 of the.2009 edition). Please note that some of the contents of this document may involve patents. The issuing agency of this document is not responsible for identifying patents. This document is prepared by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standards The material subcommittee of the Chemical Technology Committee (SAC/TC203/SC2) jointly proposed and managed. Drafting organizations of this document. The 46th Research Institute of China Electronics Technology Group Corporation, Non-ferrous Metals Technology and Economic Research Institute Co., Ltd. Company, Youyan Semiconductor Materials Co., Ltd., Guangzhou Kunde Technology Co., Ltd., Qinghai Xince Technology Co., Ltd., Zhejiang Haina Semiconductor Co., Ltd. Company, Leshan City Product Quality Supervision and Inspection Institute, China Institute of Metrology, Asia Silicon Industry (Qinghai) Co., Ltd., Zhejiang Jinrui Hongke Technology Co., Ltd., Kaihua County Inspection and Testing Research Institute, Nanjing Guosheng Electronics Co., Ltd., Qinghai Yellow River Upstream Hydropower Development Co., Ltd. Division New Energy Branch, Yiwu Limai New Material Co., Ltd. The main drafters of this document. Liu Lina, Liu Zhaofeng, He Xuankun, Liu Gang, Yang Suxin, Sun Yan, Gao Ying, Wang Xin, Liang Hong, Pan Jinping, Lou Chunlan, Zong Bing, Li Shenzhong, Pan Wenbin, Cai Liyan, Wang Zhiqiang, Pi Kunlin. The previous versions of this document and the documents replaced are as follows. ---First released as GB 1551-1979 in 1979; --- When it was first revised in.1995, the content of GB 5253-1985 ``Measurement Method of Germanium Single Crystal Resistivity DC Two Probes'' was incorporated; --- In the second revision in.2009, it was incorporated into the GB/T 1552-1995 "Silicon and Germanium Single Crystal Resistivity Determination of the Straight Four Probe Method" The release status of the previous editions of GB/T 1552-1995 is. GB 1552-1979 "Single crystal resistivity DC four-probe measurement Measurement Method, GB/T 1552-1995 "Silicon and Germanium Single Crystal Resistivity Determination Direct-array Four-Probe Method", of which GB/T 1552-1995 Replace GB 1552-1979, GB 5251-1985, GB 6615-1986), and delete the germanium single crystal resistivity test method content; ---This is the third revision. Determination of resistivity of silicon single crystal Straight four-point probe method and DC two-point probe method1 ScopeThis document specifies the methods for testing the resistivity of silicon single crystals by the straight four-point probe method and the DC two-point probe method. This document is suitable for testing the resistivity of silicon single crystals, and the range of p-type silicon single crystal resistivity that can be tested by the straight four-point probe method is 7× 10-4Ω·cm~8×103Ω·cm, n-type silicon single crystal resistivity range is 7×10-4Ω·cm~1.5×104Ω·cm; DC two probes The method is suitable for testing the resistivity of round, square or rectangular silicon single crystals with uniform cross-sectional area, and the test range is 1×10-3Ω·cm~1× 104Ω·cm, the ratio of the length of the sample to the maximum dimension of the cross-section is not less than 3.1.Refer to this document for the test of resistivity in other ranges of silicon single crystal get on.2 Normative referencesThe contents of the following documents constitute the indispensable clauses of this document through normative references in the text. Among them, dated quotations Only the version corresponding to that date is applicable to this document; for undated reference documents, the latest version (including all amendments) is applicable to This document. GB/T 1550 Test method for conductivity type of extrinsic semiconductor materials GB/T 14264 Terminology of Semiconductor Materials3 Terms and definitionsThe terms and definitions defined in GB/T 14264 are applicable to this document.4 Test conditionsThe ambient temperature is 23℃±5℃, and the relative humidity is not more than 65%.5 Disturbing factors5.1 Light may affect the resistivity test results. Therefore, unless the sample to be tested is not sensitive to the surrounding light, the test should be in light as much as possible. Performed in a darker environment or in a hood. Note. For samples with resistivity greater than 103Ω·cm, the influence of light is more significant. 5.2 When the test instrument is placed near a high-frequency interference source, it may cause stray currents caused by AC interference in the sample, resulting in resistivity For the error of the test result, the instrument should be electromagnetically shielded at this time. 5.3 The electric field intensity in the sample should not be too large to avoid minority carrier injection. For samples with high resistivity and long life, minority carrier injection Entry may cause the resistivity to decrease. The influence of minority carrier injection on resistivity can be obtained by repeating the test at low current, repeating the test The resistivity does not change, indicating that the minority carrier injection has little effect. If the current used is appropriate, use 2 or 1/2 times the current During the test, the change in resistivity should not exceed ±0.5%. 5.4 The resistivity test is affected by temperature, so it is necessary to keep the temperature of the test environment stable during the test. The test reference temperature is ......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 1551-2021_English be delivered?Answer: Upon your order, we will start to translate GB/T 1551-2021_English as soon as possible, and keep you informed of the progress. The lead time is typically 3 ~ 5 working days. The lengthier the document the longer the lead time.Question 2: Can I share the purchased PDF of GB/T 1551-2021_English with my colleagues?Answer: Yes. 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