GB/T 1550-2018 English PDF

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GB/T 1550-2018: Test methods for conductivity type of extrinsic semiconducting materials
Status: Valid

GB/T 1550: Historical versions

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 1550-2018	279	Add to Cart	3 days	Test methods for conductivity type of extrinsic semiconducting materials	Valid
GB/T 1550-1997	399	Add to Cart	3 days	Standard methods for measuring conductivity type of extrinsic semiconducting materials	Obsolete
GB 1550-1979	199	Add to Cart	2 days	Testing methods for conductivity type of monocrystalline silicon	Obsolete

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Basic data

Standard ID: GB/T 1550-2018 (GB/T1550-2018)
Description (Translated English): Test methods for conductivity type of extrinsic semiconducting materials
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H21
Classification of International Standard: 77.040
Word Count Estimation: 14,133
Date of Issue: 2018-12-28
Date of Implementation: 2019-11-01
Older Standard (superseded by this standard): GB/T 1550-1997
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration

GB/T 1550-2018: Test methods for conductivity type of extrinsic semiconducting materials

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test methods for conductivity type of extrinsic semiconducting materials ICS 77.040 H21 National Standards of People's Republic of China Replace GB/T 1550-1997 Test method for conductivity type of extrinsic semiconductor materials Published on.2018-12-28 2019-11-01 implementation State market supervision and administration China National Standardization Administration issued

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard replaces GB/T 1550-1997 "Test method for conductivity type of extrinsic semiconductor materials", compared with GB/T 1550-1997 The main technical changes are as follows. --- The scope of application was changed to "This standard applies to the testing of conductivity types of silicon and germanium non-intrinsic semiconductor materials, and other extrinsic semiconductors. Materials can be tested with reference to this standard" (see Chapter 1, Chapter 1 of the.1997 edition); --- Added terms and definitions (see Chapter 3); --- Change the original standard 1.2~1.9 to "4.1 General" (see 4.1,.1997 version 1.2~1.9); --- Revised the scope of application of Method A, Method D1, Method D2 (see 4.1.2, 4.1.5, 4.1.6,.1997, 1.3, 1.6, 1.7); --- Added method E (surface photovoltage method) to test the conductivity type (see 4.1.7, 4.5, 5.5, 7.6, 9.5); --- Added "If you use 9.1 ~ 9.5 test steps to obtain stable readings and good sensitivity, then the sample table No stain or oxide layer on the surface. If the reading is unstable or the sensitivity is poor, it indicates that the surface of the sample has been stained or has an oxide layer. The surface of the sample was treated by the method of 8.2. " (see 9.6); --- Added analysis of test results (see Chapter 10). This standard is supported by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and National Semiconductor Equipment and Materials Standards. The Technical Subcommittee Materials Branch (SAC/TC203/SC2) jointly proposed and managed. This standard was drafted. Leshan City Product Quality Supervision and Inspection Institute, China Institute of Metrology, Guangzhou Kunde Technology Co., Ltd. Milliper Trading (Shanghai) Co., Ltd., Zhejiang Haina Semiconductor Co., Ltd., Xinte Energy Co., Ltd., Jiangsu Zhongneng Silicon Technology Co., Ltd. Exhibition Co., Ltd., Silicon Semiconductor Materials Research Institute, Luoyang Zhongsi High-Tech Co., Ltd., Zhonghao Technology Co., Ltd., Yunnan Metallurgical Cloud Silicon Co., Ltd., Jiangxi Saiwei LDK Solar High-Tech Co., Ltd., Beijing Heineng Sunshine New Energy Technology Co., Ltd. The main drafters of this standard. Liang Hong, Wang Ying, Zhao Xiaobin, Gao Ying, Wang Wei, Wang Feiqi, Huang Li, Xu Hongyu, Qiu Yanmei, Liu Xiaoxia, Yang Xu, Zhang Yuanyuan, Liu Xinjun, Xu Yuanzhi, Cheng Xiaojuan, Pan Jinping, Xiao Zongjie. The previous versions of the standards replaced by this standard are. ---GB 1550-1979, GB/T 1550-1997; ---GB 5256-1985. Test method for conductivity type of extrinsic semiconductor materials

1 Scope

This standard specifies the test method for the conductivity type of extrinsic semiconductor materials. This standard is applicable to the testing of conductivity types of silicon and germanium non-intrinsic semiconductor materials. Other extrinsic semiconductor materials may be tested with reference to this standard. test. This standard method can ensure reliable results for uniform materials of the same conductivity type; for materials with non-uniform conductivity types, Different conductive type regions are measured on the surface. This standard does not apply to the testing of conductive types of layered structural materials such as epitaxial wafers.

2 Normative references

The following documents are indispensable for the application of this document. For dated references, only dated versions apply to this article. Pieces. For undated references, the latest edition (including all amendments) applies to this document. GB/T 1551 silicon single crystal resistivity determination method GB/T 4326 extrinsic semiconductor single crystal Hall mobility and Hall coefficient measurement method GB/T 14264 semiconductor material terminology

3 Terms and definitions

The terms and definitions defined in GB/T 14264 apply to this document.

4 Method summary

4.1 General 4.1.1 This standard includes five test methods. Method A---Thermal probe method; Method B---Cold probe method; Method C---Point contact rectification Method; Method D---All-type method, including method D1---all types of rectification method, method D2---all types of thermoelectric potential method; method E---table Surface light voltage method. 4.1.2 Method A. Applicable to N-type and P-type tantalum materials with a resistivity of 20 Ω·cm or less and N-type resistivity of 1000 Ω·cm or less And P-type silicon material. 4.1.3 Method B. Applicable to N-type and P-type tantalum materials with a resistivity of 20 Ω·cm or less and N-type resistivity of 1000 Ω·cm or less And P-type silicon material. 4.1.4 Method C. Applicable to N-type and P-type silicon materials with a resistivity of 1 Ω·cm to 1000 Ω·cm. 4.1.5 Method D1. Suitable for N-type and P-type tantalum materials with a resistivity of 1 Ω·cm~36 Ω·cm and a resistivity of 0.1 Ω·cm~ N-type and P-type silicon materials of 3000 Ω·cm. 4.1.6 Method D2. Applicable to N-type and P-type silicon materials with a resistivity of 0.2 Ω·cm to 1 Ω·cm. 4.1.7 Method E. Applicable to N-type and P-type silicon materials with a resistivity of 0.2 Ω·cm to 3000 Ω·cm. 4.1.8 Methods A to E may also be used to test extrinsic semiconductor materials beyond the scope defined in 4.1.2 to 4.1.7, but their applicability is not Tested and verified. ......

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