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GB/T 10067.417-2023 English PDF

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US$359.00 · In stock
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GB/T 10067.417-2023: Basic specifications for electroheating and electromagnetic processing installations - Part 417: Silicon carbide crystal growth installations
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 10067.417-2023	359	Add to Cart	4 days	Basic specifications for electroheating and electromagnetic processing installations - Part 417: Silicon carbide crystal growth installations	Valid

Similar standards

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Basic data

Standard ID: GB/T 10067.417-2023 (GB/T10067.417-2023)
Description (Translated English): Basic specifications for electroheating and electromagnetic processing installations - Part 417: Silicon carbide crystal growth installations
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: K61
Classification of International Standard: 25.180.10
Word Count Estimation: 17,151
Date of Issue: 2023-05-23
Date of Implementation: 2023-12-01
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration

GB/T 10067.417-2023: Basic specifications for electroheating and electromagnetic processing installations - Part 417: Silicon carbide crystal growth installations

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 25:180:10 CCSK61 National Standards of People's Republic of China Basic technical conditions for electrothermal and electromagnetic treatment devices Part 417: Silicon carbide single crystal growth apparatus Released on 2023-05-23 2023-12-01 Implementation State Administration for Market Regulation Released by the National Standardization Management Committee

Preface III Introduction V 1 Scope 1 2 Normative references 1 3 Terms and Definitions 1 4 Product Category 2 4:1 Model parameters 2 4:2 Single crystal furnace type, heating method and code 2 4:3 Main parameters 3 5 Technical requirements 3 5:1 General requirements 3 5:2 Supplementary requirements for design and manufacture4 5:3 Performance requirements 6 5:4 Set of requirements 7 6 Test method 7 6:1 General requirements 7 6:2 Measurement of pressure rise rate 7 6:3 Measurement of Furnace Temperature Stability 7 6:4 Measurement of Relative Deviation of Motion Parameters 8 6:5 Measurement of speed percentage deviation 8 6:6 Measurement of creepage 8 6:7 Measurement of coaxiality 8 6:8 Industrial growth crystal experiment 8 7 Inspection rules 9 7:1 General requirements 9 7:2 Factory inspection items 9 7:3 Type inspection items 9 8 Labeling, packaging, transportation and storage 9 8:1 General requirements 9 8:2 Other requirements 10 9 Ordering and Delivery 10 9:1 General requirements 10 9:2 Special requirements 10

foreword

This document is in accordance with the provisions of GB/T 1:1-2020 "Guidelines for Standardization Work Part 1: Structure and Drafting Rules for Standardization Documents" drafting: This document is part 417 of GB/T 10067 "Basic Technical Conditions for Electrothermal and Electromagnetic Treatment Devices": GB/T 10067 has issued Published the following sections: --- Part 1: General part; --- Part 2: Arc heating device; --- Part 21: Large AC electric arc furnace; --- Part 3: Induction electric heating device; --- Part 31: Intermediate frequency centerless induction furnace; --- Part 32: Complete set of voltage type frequency conversion multiple intermediate frequency centerless induction furnaces; --- Part 33: Power frequency centerless induction copper melting furnace; --- Part 34: Transistor-type high-frequency induction heating device; --- Part 35: Intermediate frequency vacuum induction melting furnace; --- Part 36: Induction diathermy device; --- Part 4: Indirect resistance furnace; --- Part 41: Mesh belt resistance heating unit; --- Part 42: Push type resistance heating unit; --- Part 43: Forced convection pit type resistance furnace; --- Part 44: Box resistance furnace; --- Part 45: Vacuum quenching furnace; --- Part 46: Bell resistance furnace; --- Part 47: Vacuum heat treatment and brazing furnace; --- Part 48: Trolley resistance furnace; --- Part 49: Natural convection well resistance furnace; --- Part 410: Single crystal furnace; --- Part 411: Electric heating bath furnace; --- Part 412: Box quenching furnace; --- Part 413: Experimental resistance furnace; --- Part 414: Industrial gem furnaces; --- Part 415: Aluminum annealing furnace; --- Part 416: Polycrystalline silicon ingot furnace; --- Part 417: Silicon carbide single crystal growth device; --- Part 5: High-frequency dielectric heating equipment; --- Part 8: Electroslag remelting furnace: Please note that some contents of this document may refer to patents: The issuing agency of this document assumes no responsibility for identifying patents: This document is proposed by China Electrical Equipment Industry Association: This document is under the jurisdiction of the National Industrial Electric Heating Equipment Standardization Technical Committee (SAC/TC121): This document was drafted by: Jiangsu Xingteliang Technology Co:, Ltd:, Xi'an Electric Furnace Research Institute Co:, Ltd:, Anhui Ruichi New Energy Co:, Ltd:, Henan Tianli Thermal Equipment Co:, Ltd:, Xiamen Xiaoxun New Energy Technology Co:, Ltd:, Chengdu Yuehai Gold Semiconductor Materials Co:, Ltd:, Changzhou Lemeng Pressure Vessel Co:, Ltd:, Hebei Tongguang Semiconductor Co:, Ltd:, Zhangjiagang Zhongya Special Transformer Manufacturing Co:, Ltd: Division, Xi'an Huijin Technology Co:, Ltd:, Zhuzhou Ruidell Intelligent Equipment Co:, Ltd:, Zhongshan Heshuo Gaopin Electric Co:, Ltd:, Guangdong Feichengxin Materials Co:, Ltd:, Xi'an Flat Heat Treatment Co:, Ltd: The main drafters of this document: Li Liuchen, Yu Weijiang, Li Kun, Cao Jiao, Xie Ping, Zhang Yongwu, Li Mingke, Zhao Ran, Pan Yanping, Yang Kun, Zhou Zhengxing, Li Xiaojie, Chen Peixian, Jin Xingyu, Yin Dan, Duan Chunfang, Yang Zhen:

Introduction

Electric heating and electromagnetic treatment devices are important thermal process equipment in various industrial sectors of the national economy: The device is mainly based on different electric heating methods and The classification of electromagnetic treatment can also be classified according to different applications, different working frequencies and different working atmospheres: In order to ensure the development, production, Use and sales are carried out in an orderly manner, to promote its technological progress and product quality, and to better meet the requirements of thermal processes, it is necessary to develop this device This also provides the necessary conditions for the formulation of its safety and test method standards: In this regard, our country has established GB/T 10067 "Basic Technical Conditions for Electrothermal and Electromagnetic Treatment Devices" series of standards, consisting of the general part and its supplements, as well as the special parts classified according to the above Composed of parts: GB/T 10067 aims to specify the product classification of electrothermal and electromagnetic treatment devices and the design, manufacture, safety, energy saving and Requirements that need to be met in terms of environmental protection, performance and packaging, and describe the verification method used to determine whether the requirements are met, to be organized by the following It consists of 39 parts: --- Part 1: General part: The purpose is to specify the general technical requirements for various types of electrothermal and electromagnetic treatment devices: --- Part 1101: General requirements for vacuum electrothermal and electromagnetic treatment devices: The purpose is to specify vacuum electrothermal and electromagnetic treatment devices general technical requirements: --- Part 2: Arc heating device: The purpose is to specify the special technical requirements for arc heating devices: --- Part 21: Large AC electric arc furnace: The purpose is to specify the special technical requirements for large AC electric arc furnaces: --- Part 22: Vacuum remelting electric arc furnace: The purpose is to specify the special technical requirements for vacuum remelting electric arc furnaces: --- Part 3: Induction heating device: The purpose is to specify the special technical requirements for induction heating devices: --- Part 31: Intermediate frequency centerless induction furnace: The purpose is to specify the special technical requirements for intermediate frequency centerless induction furnaces: --- Part 32: Complete set of voltage-type frequency conversion multiple intermediate frequency centerless induction furnaces: The purpose is to specify the voltage-type frequency conversion multiple intermediate frequency without Special technical requirements for complete sets of induction furnaces: --- Part 33: Power frequency centerless induction copper melting furnace: The purpose is to specify the special technical requirements for power frequency centerless induction copper melting furnaces: --- Part 34: Transistor-type high-frequency induction heating device: The purpose is to specify the special technology of transistor-type high-frequency induction heating device technical requirements: --- Part 35: Intermediate frequency vacuum induction melting furnace: The purpose is to specify the special technical requirements for intermediate frequency vacuum induction melting furnaces: --- Part 36: Induction diathermy device: The purpose is to specify the special technical requirements for induction diathermy devices: --- Part 37: Superconducting DC induction diathermy device: The purpose is to specify the special technical requirements for superconducting DC induction diathermy devices: --- Part 4: Indirect resistance furnace: The purpose is to specify the special technical requirements for indirect resistance furnaces: --- Part 41: Mesh belt resistance heating unit: The purpose is to specify the special technical requirements for mesh belt resistance heating units: --- Part 42: Push resistance heating unit: The purpose is to specify the special technical requirements for push-type resistance heating units: --- Part 43: Forced convection well type resistance furnace: The purpose is to specify the special technical requirements for forced convection pit type resistance furnace: --- Part 44: Box resistance furnace: The purpose is to specify the special technical requirements for box-type resistance furnaces: --- Part 45: Vacuum quenching furnace: The purpose is to specify the special technical requirements for vacuum quenching furnaces: --- Part 46: Bell resistance furnace: The purpose is to specify the special technical requirements for bell-type resistance furnaces: --- Part 47: Vacuum heat treatment and brazing furnace: The purpose is to specify the special technical requirements for vacuum heat treatment and brazing furnaces: --- Part 48: Trolley resistance furnace: The purpose is to specify the special technical requirements for trolley resistance furnaces: --- Part 49: Natural convection well resistance furnace: The purpose is to specify the special technical requirements for natural convection well resistance furnaces: --- Part 410: Single crystal furnace: The purpose is to specify the special technical requirements for single crystal furnaces: --- Part 411: Electric heating bath furnace: The purpose is to specify the special technical requirements for electric heating bath furnaces: --- Part 412: Box quenching furnace: The purpose is to specify the special technical requirements for box-type quenching furnaces: --- Part 413: Experimental resistance furnace: The purpose is to specify the special technical requirements for experimental resistance furnaces: --- Part 414: Industrial gem furnaces: The purpose is to specify the special technical requirements for industrial gemstone furnaces: --- Part 415: Aluminum annealing furnace: The purpose is to specify the special technical requirements for aluminum annealing furnaces: --- Part 416: Polycrystalline silicon ingot furnace: The purpose is to specify the special technical requirements for polysilicon ingot furnaces: --- Part 417: Silicon carbide single crystal growth device: The purpose is to specify the special technical requirements for silicon carbide single crystal growth equipment: --- Part 5: High-frequency dielectric heating equipment: The purpose is to specify the special technical requirements for electrothermal and electrochemical plasma equipment: --- Part 6: Industrial microwave heating devices: The purpose is to specify the special technical requirements for industrial microwave heating devices: --- Part 7: Electrothermal devices with electron guns: The purpose is to specify the special technical requirements for electrothermal devices with electron guns: --- Part 8: Electroslag remelting furnace: The purpose is to specify the special technical requirements for electroslag remelting furnaces: --- Part 9: High-frequency dielectric heating equipment: The purpose is to specify the special technical requirements for high-frequency dielectric heating equipment: --- Part 10: Semi-thermal system: The purpose is to specify the special technical requirements for semi-thermal systems: --- Part 11: Electromagnetic treatment device: The purpose is to specify the special technical requirements for electromagnetic treatment devices: --- Part 12: Infrared heating device: The purpose is to specify the special technical requirements for infrared heating devices: This document and each specific part are formulated according to the general part, and the relevant provisions of the general part are completed according to the characteristics of various devices: Kind and complementary: Basic technical conditions for electrothermal and electromagnetic treatment devices Part 417: Silicon carbide single crystal growth apparatus

1 Scope

This document specifies the product classification, technical requirements, test methods, inspection rules, marks, packaging, transportation and Storage and ordering and delivery: This document is applicable to electrothermal devices for growing silicon carbide single crystals by indirect resistance heating under vacuum or protective atmosphere: high frequency sense The device for growing silicon carbide single crystal that should be heated is used as reference: This document is applicable to the silicon carbide single crystal growth device of physical vapor transport method, and the silicon carbide single crystal growth device of other methods is used as a reference:

2 Normative references

The contents of the following documents constitute the essential provisions of this document through normative references in the text: Among them, dated references For documents, only the version corresponding to the date is applicable to this document; for undated reference documents, the latest version (including all amendments) is applicable to this document: GB 150 (all parts) pressure vessels GB/T 2900:23-2008 Electrotechnical Terminology Industrial Electric Heating Devices GB 3095-2012 Ambient Air Quality Standard GB/T 5959:1-2019 Safety of electrothermal and electromagnetic treatment devices Part 1: General requirements GB 8978-1996 Integrated Wastewater Discharge Standard GB/T 10066:1-2019 Test methods for electrothermal and electromagnetic treatment devices Part 1: General part GB/T 10066:4-2004 Test methods for electric heating equipment Part 4: Indirect resistance furnace GB/T 10067:1-2019 Basic technical requirements for electrothermal and electromagnetic treatment devices Part 1: General part GB/T 10067:4-2005 Basic technical conditions for electric heating devices Part 4: Indirect resistance furnace GB 12348-2008 Environmental Noise Emission Standard for Boundary of Industrial Enterprises GB 16297-1996 Comprehensive Emission Standard of Air Pollutants JB/T 9691-1999 Electric heating equipment product model compilation method

3 Terms and Definitions

The following terms and definitions defined in GB/T 2900:23-2008 and GB/T 10067:1-2019 apply to this document: 3:1 In a high vacuum state or a low positive pressure protective atmosphere, using indirect resistance heating or high frequency induction heating, it is produced by physical vapor transport method: Industrial electrothermal equipment for growing silicon carbide single crystals: 3:2 A method of growing crystals by sublimation and recrystallization of solid phase raw materials under high temperature conditions: Note: Place the solid-phase raw material on the bottom of the crucible, place the seed crystal on the top of the crucible, heat the raw material and control the temperature of the seed crystal to be lower than the temperature of the raw material by an appropriate ......

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Tips & Frequently Asked Questions:

Question 1: How long will the true-PDF of GB/T 10067.417-2023_English be delivered?

Answer: Upon your order, we will start to translate GB/T 10067.417-2023_English as soon as possible, and keep you informed of the progress. The lead time is typically 2 ~ 4 working days. The lengthier the document the longer the lead time.

Question 2: Can I share the purchased PDF of GB/T 10067.417-2023_English with my colleagues?

Answer: Yes. The purchased PDF of GB/T 10067.417-2023_English will be deemed to be sold to your employer/organization who actually pays for it, including your colleagues and your employer's intranet.

Question 3: Does the price include tax/VAT?

Answer: Yes. Our tax invoice, downloaded/delivered in 9 seconds, includes all tax/VAT and complies with 100+ countries' tax regulations (tax exempted in 100+ countries) -- See Avoidance of Double Taxation Agreements (DTAs): List of DTAs signed between Singapore and 100+ countries

Question 4: Do you accept my currency other than USD?

Answer: Yes. If you need your currency to be printed on the invoice, please write an email to Sales@ChineseStandard.net. In 2 working-hours, we will create a special link for you to pay in any currencies. Otherwise, follow the normal steps: Add to Cart -- Checkout -- Select your currency to pay.