|
Std ID |
Description (Standard Title) |
Detail |
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SJ 1170-1977
|
(Y31 phosphor)
|
SJ 1170-1977
|
|
SJ 1185-1977
|
Color television test pattens (Provisional)
|
SJ 1185-1977
|
|
SJ 119-1973
|
(Chinese Industry Standard)
|
SJ 119-1973
|
|
SJ 119-1986
|
Rotary wafer switches (low current rating), with central mounting, maximum number of positions; 12, maximum diameter: 55mm, Type KX01
|
SJ 119-1986
|
|
SJ 1224-1977
|
(General technical conditions of vacuum evaporation equipment)
|
SJ 1224-1977
|
|
SJ 1225-1977
|
Detail specification for germanium detector diodes, Type 2AP11~2AP17
|
SJ 1225-1977
|
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SJ 1226-1977
|
Detail specification for germanium detector diodes, Type 2AP9~2AP10
|
SJ 1226-1977
|
|
SJ 1227-1977
|
Detail specification for germanium detector diodes, Type 2AP1~2AP8, 2AP21 and 2AP27
|
SJ 1227-1977
|
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SJ 1228-1977
|
Detail specification for germanium wideband detector diodes, Type 2AP30~2AP31
|
SJ 1228-1977
|
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SJ 1229-1977
|
Detail specification for germanium switching diodes, Type 2AK1~20
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SJ 1229-1977
|
|
SJ 1230-1977
|
Methods of measurement for high frequency rectified current of germanium detector diodes
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SJ 1230-1977
|
|
SJ 1231-1977
|
(Germanium switching diode reverse recovery time of the test method)
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SJ 1231-1977
|
|
SJ 123-1965
|
(Chinese Industry Standard)
|
SJ 123-1965
|
|
SJ 1233-1977
|
(CB10 polystyrene capacitor)
|
SJ 1233-1977
|
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SJ 1234-1977
|
(DB11 polystyrene capacitor)
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SJ 1234-1977
|
|
SJ 1241-1977
|
Generic specification for paper dielectic capacitors
|
SJ 1241-1977
|
|
SJ 1242-1977
|
(CZ11 type paper capacitor)
|
SJ 1242-1977
|
|
SJ 1243-1977
|
(CZ12 type paper capacitor)
|
SJ 1243-1977
|
|
SJ 1244-1977
|
(CZ30 seal paper capacitor)
|
SJ 1244-1977
|
|
SJ 1245-1977
|
(CZ31 low-sealing paper capacitor)
|
SJ 1245-1977
|
|
SJ 1246-1977
|
(CZ32 seal paper capacitor)
|
SJ 1246-1977
|
|
SJ 1247-1977
|
Hermetically sealed paper dielectric capacitors for Type CZ40
|
SJ 1247-1977
|
|
SJ 1248-1977
|
Hermetically sealed paper dielectric capacitors for Type CZ41
|
SJ 1248-1977
|
|
SJ 1249-1977
|
Hermetically sealed high-voltage paper dielectric capacitors for Type CZ82
|
SJ 1249-1977
|
|
SJ 1263-1977
|
XED/XCD-type C-cores for single-phase transformers
|
SJ 1263-1977
|
|
SJ 1267-1977
|
Thermal resistance measurements of sinks for semiconductor devices under natural air cooling conditions
|
SJ 1267-1977
|
|
SJ 1269-1977
|
Through-hole glass power insulators, Type FBJ
|
SJ 1269-1977
|
|
SJ 1270-1977
|
Through-hole glass insulators
|
SJ 1270-1977
|
|
SJ 1271-1977
|
(Chinese Industry Standard)
|
SJ 1271-1977
|
|
SJ 1274-1977
|
Diamond wortle
|
SJ 1274-1977
|
|
SJ 1276-1977
|
Techical requirements for quality inspection of metallic coatings and chemically treated layers
|
SJ 1276-1977
|
|
SJ 1277-1977
|
Quality inspection rules for the acceptance of metallic coatings and chemically treated layers
|
SJ 1277-1977
|
|
SJ 1278-1977
|
Inspection methods appearance of metallic coatings and chemically treated layers
|
SJ 1278-1977
|
|
SJ 1279-1977
|
Test methods for metallic coatings
|
SJ 1279-1977
|
|
SJ 1280-1977
|
Test methods for porosity of metallic coatings
|
SJ 1280-1977
|
|
SJ 1281-1977
|
Test methods for thickness of metallic coatings and chemically treated layers
|
SJ 1281-1977
|
|
SJ 1282-1977
|
Test methods for adhesion of metallic coatings
|
SJ 1282-1977
|
|
SJ 1283-1977
|
Test methods for corrosion of metallic coatings and chemically treated layers
|
SJ 1283-1977
|
|
SJ 1284-1977
|
Methods for evaluation of corrosion test results for metallic coatings and chemically treated layers
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SJ 1284-1977
|
|
SJ 1285-1977
|
Test methods for electric insulating property of aluminium alloy anodizing
|
SJ 1285-1977
|
|
SJ 1286-1977
|
Electronic tubes, Type FU-105Z
|
SJ 1286-1977
|
|
SJ 1287-1977
|
Electronic tubes, Type FU-101F and F-101Z
|
SJ 1287-1977
|
|
SJ 1370-1978
|
(CBM 443 (403) BF type FM AM four with variable capacitor dielectric film)
|
SJ 1370-1978
|
|
SJ 1372-1978
|
Dimension tolerances for moulding plastic parts
|
SJ 1372-1978
|
|
SJ 1373-1978
|
(Fax type designation)
|
SJ 1373-1978
|
|
SJ 1374-1978
|
(Teletype Model naming)
|
SJ 1374-1978
|
|
SJ 1381-1978
|
Structure and technology of test diode
|
SJ 1381-1978
|
|
SJ 1382-1978
|
Electronic tubes, Type FU-822Z (F)
|
SJ 1382-1978
|
|
SJ 1383-1978
|
Electronic tubes, Type FU-104Z (F)
|
SJ 1383-1978
|
|
SJ 1385-1978
|
General specification for noise-generator diodes and gas discharge noise tubes
|
SJ 1385-1978
|
|
SJ 1386-1978
|
Measurement conditions for noise-generator diodes and gas discharge noise tubes
|
SJ 1386-1978
|
|
SJ 1387-1978
|
Methods of measurement for filament current and filament voltage of noise-generator diodes
|
SJ 1387-1978
|
|
SJ 1388-1978
|
Methods of measurement for anode conductance of noise-generator diodes
|
SJ 1388-1978
|
|
SJ 1389-1978
|
Methods of measurement for diodes leakage current between electrodes of noise-generator diodes
|
SJ 1389-1978
|
|
SJ 1390-1978
|
Methods of measurement for nonliearity factor of excess noise power of noise-generator diodes
|
SJ 1390-1978
|
|
SJ 1391-1978
|
Methods of measurement for voltage standing wave ratio on cold conditions of noise-generator diodes
|
SJ 1391-1978
|
|
SJ 1392-1978
|
Methods of measurement for excess noise power of noise-generator diodes
|
SJ 1392-1978
|
|
SJ 1393-1978
|
Methods of measurement for cathode preheating time of gas discharge noise tubes
|
SJ 1393-1978
|
|
SJ 1394-1978
|
Methods of measurement for firing voltage of gas discharge noise tubes
|
SJ 1394-1978
|
|
SJ 1395-1978
|
Methods of measurement for anode current and tube voltage drop of gas discharge noise tubes
|
SJ 1395-1978
|
|
SJ 1396-1978
|
Methods of measurement for voltage standing wave ratio of gas discharge noise tubes
|
SJ 1396-1978
|
|
SJ 1397-1978
|
Methods of measurement for decaying characteristic of gas discharge noise tubes
|
SJ 1397-1978
|
|
SJ 1398-1978
|
Methods of measurement for excess noise ratio and nonstationary characteristic of gas discharge noise tubes
|
SJ 1398-1978
|
|
SJ 1405-1978
|
Detail specification for silicon NPN high-frequency high power transistors, Type 3DA1
|
SJ 1405-1978
|
|
SJ 1406-1978
|
Detail specification for silicon NPN high-frequency high power transistors, Type 3DA96
|
SJ 1406-1978
|
|
SJ 1407-1978
|
Detail specification for silicon NPN high-frequency high power transistors, Type 3DA4
|
SJ 1407-1978
|
|
SJ 1408-1978
|
Detail specification for silicon NPN high frequency high power transistors, Type 3DA101
|
SJ 1408-1978
|
|
SJ 1409-1978
|
Detail specification for silicon NPN high-frequency high pwer transistors, Type 3DA3
|
SJ 1409-1978
|
|
SJ 1410-1978
|
Detail specification for silicon NPN high-frequency high power transistors, Type 3DA98
|
SJ 1410-1978
|
|
SJ 1411-1978
|
Detail specification for silicon NPN high-frequency high power transistors, Type 3DA5
|
SJ 1411-1978
|
|
SJ 1412-1978
|
Detail specification for silicon NPN high-frequency high power transistors, Type 3DA14
|
SJ 1412-1978
|
|
SJ 1413-1978
|
Detail specification for silicon NPN high-frequency high power transistors, Type 3DA2
|
SJ 1413-1978
|
|
SJ 1414-1978
|
Detail specification for silicon NPN high-frequency high power transistors, Type 3DA102
|
SJ 1414-1978
|
|
SJ 1415-1978
|
Detail specification for silicon NPN high-frequency high power transistors, Type 3DA28
|
SJ 1415-1978
|
|
SJ 1416-1978
|
Detail specification for silicon NPN high-frequency high power transistors, Type 3DA100
|
SJ 1416-1978
|
|
SJ 1417-1978
|
Detail specification for silicon NPN high-frequency high power transistors, Type 3DA103
|
SJ 1417-1978
|
|
SJ 1418-1978
|
Detail specification for silicon NPN high-frequency high power transistors, Type 3DA10
|
SJ 1418-1978
|
|
SJ 1419-1978
|
Detail specification for silicon NPN high-frequency high power transistors, Type 3DA18
|
SJ 1419-1978
|
|
SJ 1420-1978
|
Detail specification for silicon NPN high-frequency high power transistors, Type 3DA104
|
SJ 1420-1978
|
|
SJ 1421-1978
|
Detail specification for silicon NPN high-frequency high power transistors, Type 3DA22
|
SJ 1421-1978
|
|
SJ 142-1978
|
(Electronic equipment - General technical requirements)
|
SJ 142-1978
|
|
SJ 1422-1978
|
Detail specificaiton for silicon NPN high-frequency high power transistors, Type 3DA37
|
SJ 1422-1978
|
|
SJ 1423-1978
|
Detail specification for silicon NPN high-frequency high power transistors, Type 3DA32
|
SJ 1423-1978
|
|
SJ 1424-1978
|
Detail specification for silicon NPN high-frequency high power transistors, Type 3DA105
|
SJ 1424-1978
|
|
SJ 1425-1978
|
Detail specification for silicon NPN high-frequency high power transistors, Type 3DA106
|
SJ 1425-1978
|
|
SJ 1426-1978
|
Detail specification for silicon NPN high-frequency high power transistors, Type 3DA21
|
SJ 1426-1978
|
|
SJ 1427-1978
|
Detail specification for silicon NPN high-frequency high power transistors, Type 3DA92
|
SJ 1427-1978
|
|
SJ 1428-1978
|
Detail specification for silicon NPN high-frequency high power transistors, Type 3DA107
|
SJ 1428-1978
|
|
SJ 1429-1978
|
Detail specification for silicon NPN high-frequency high power transistors, Type 3DA108
|
SJ 1429-1978
|
|
SJ 1430-1978
|
Detail specification for silicon NPN high-frequency high power transistors, Type 3DA89
|
SJ 1430-1978
|
|
SJ 1431-1978
|
Detail specification for silicon NPN high-frequency high power transistors, Type 3DA39
|
SJ 1431-1978
|
|
SJ 143-1965
|
(General technical requirements and test methods for ceramic parts are silver)
|
SJ 143-1965
|
|
SJ 1436-1978
|
Pulsed magnetron, Type CKM-104
|
SJ 1436-1978
|
|
SJ 1437-1978
|
Pulsed magnetron, Type CKM-104B
|
SJ 1437-1978
|
|
SJ 1438-1978
|
Pulsed magnetron, Type CKM-114
|
SJ 1438-1978
|
|
SJ 1439-1978
|
Pulsed magnetron, Type CKM-114B
|
SJ 1439-1978
|
|
SJ 1444-1978
|
(Chinese Industry Standard)
|
SJ 1444-1978
|
|
SJ 1445-1978
|
(Chinese Industry Standard)
|
SJ 1445-1978
|
|
SJ 1446-1978
|
(Chinese Industry Standard)
|
SJ 1446-1978
|
|
SJ 1447-1978
|
(Chinese Industry Standard)
|
SJ 1447-1978
|