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Std ID |
Description (Standard Title) |
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SJ/T 10977-1996
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Detailed specifications for electronic components - 2CK111, 2CK112 and 2CK113 silicon switching diodes (Applicable for certification)
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SJ/T 10978-1996
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Detailed specifications for electronic components - 2CC21 and 2CC26 silicon tuning variable capacitance diodes (Applicable for certification)
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SJ/T 10979-1996
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Detailed specifications for electronic components - 2CC22 and 2CC27 silicon tuning variable capacitance diodes (Applicable for certification)
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SJ/T 10980-1996
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Detailed specifications for electronic components - 2CC23 and 2CC28 silicon tuning variable capacitance diodes (Applicable for certification)
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SJ/T 10981-1996
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Detailed specifications for electronic components - 2CC24 and 2CC29 silicon tuning variable capacitance diodes (Applicable for certification)
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SJ/T 10982-1996
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Detailed specifications for electronic components -2CC25 and 2CC30 silicon band variable capacitance diodes (Applicable for certification)
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SJ/T 10992-1996
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Detailed specifications for electronic components - 2CW412-473 voltage-regulating diodes (Applicable for certification)
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SJ/T 10993-1996
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Detailed specifications for electronic components - 2CW380-411 voltage-regulating diodes (Applicable for certification)
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SJ 50033/100-1995
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Semiconductor discrete device. Detail specification for type 2CJ60 step recovery diodes
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SJ 50033/69-1995
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Semiconductor discrete device. Detail specification for type PIN 30 series for PIN diode
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SJ 50033/70-1995
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Semiconductor discrete device. Detail specification for type PIN35 series for PIN diode
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SJ 1414-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA102
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SJ 1415-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA28
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SJ 1416-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA100
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SJ 1417-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA103
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SJ 1418-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA10
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SJ 1419-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA18
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SJ 1420-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA104
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SJ 1421-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA22
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SJ 1422-1978
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Detail specificaiton for silicon NPN high-frequency high power transistors, Type 3DA37
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SJ 1423-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA32
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SJ 1424-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA105
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SJ 1425-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA106
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SJ 1426-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA21
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SJ 1427-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA92
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SJ 1428-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA107
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SJ 1429-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA108
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SJ 1430-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA89
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SJ 1431-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA39
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SJ 934-1975
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Detail specification for silicon NPN low frequency high power high reversse voltage transistors, Type 3DD100
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SJ 935-1975
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Detail specification for silicon NPN low frequency high power high reverse voltage transistors, Type 3DD101 and 3DD102
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SJ 936-1975
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Detail specification for silicon NPN low frequency high power high reverse voltage transistors, Type 3DD103 and 3DD104
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SJ 765-1974
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Detail specification for silicon NPN eqitaxial planar low-frequency high power transistors, Type 3DD50 and 3DD51
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SJ 766-1974
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Detail specification for silicon NPN alloy diffused low-frequency high power transistors, Type 3DD52
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SJ 767-1974
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Detail specification for silicon NPN epitaxial planar low-frequency high power transistors, Type 3DD53 and 3DD54
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SJ 768-1974
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Detail specification for silicon NPN alloy diffused low-frequency high power transistors, Type 3DD55
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SJ 769-1974
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Detail specification for silion NPN epitaxial planar low-frequency high power transistors, Type 3DD56 and 3DD57
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SJ 770-1974
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Detail specification for silicon NPN alloy diffused low-frequency high power transistors, Type 3DD58
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SJ 772-1974
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Detail specification for silion NPN alloy diffused low-frequency high power transistors, Type 3DD61
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SJ 773-1974
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Detail specification for silicon NPN epitaxial planar low-frequency high power transistors, Type 3DD62 and 3DD63
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SJ 774-1974
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Detail specification for silicon NPN alloy diffused low-frequency high power transistors, Type 3DD64
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SJ 775-1974
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Detail specification for silicon NPN epitaxial planar low-frequency high power transistors, Type 3DD65 and 3DD66
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SJ 776-1974
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Detail specification for silicon NPN alloy diffused low-frequency high power transistors, Type 3DD67
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SJ 777-1974
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Detail specification for silicon NPN epitaxial planar low-frequency high power transistors, Type 3DD68 and 3DD69
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SJ 778-1974
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Detail specification for silicon NPN alloy diffused low-frequency high power transistors, Type 3DD70
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SJ 779-1974
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Detail specification for silicon NPN epitaxial planar low-frequency high power transistors, Type 3DD71
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SJ 780-1974
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Detail specification for silicon NPN alloy diffused low-frequency high power transistors, Type 3DD72
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SJ 781-1974
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Detail specification for silicon NPN epitaxial planar low-frequency high power transistors, Type 3DD73
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SJ 782-1974
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Detail specfication for silicon NPN planar high frequency low power transistors, Type 3DG100
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SJ 783-1974
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Detail specification for silicon NPN epitaxial planar high frequency low power transistors, Type 3DG101
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SJ 784-1974
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Detail specification for silicon NPN epitaxial planar high frequency low power transistors, Type 3DG102
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SJ 785-1974
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Detail specification for silicon NPN epitaxial planar high frequency low power transistors, Type 3DG103
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SJ 786-1974
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Detail specification for silicon NPN planar high frequency low power transistors, Type 3DG110
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SJ 787-1974
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Detail specification for silicon NPN epitaxial planar high frequency low power transistors, Type 3DG111
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SJ 788-1974
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Detail specification for silicon NPN epitaxial planar high frequency low power transistors, Type 3DG112
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SJ 789-1974
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Detail specification for silicon NPN epitaxial planar high frequency low power transistors, Type 3DG120
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SJ 790-1974
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Detail specification for silicon NPN epitaxial planar high frequency low power transistors, Type 3DG121
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SJ 791-1974
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Detail specification for silicon NPN epitaxial planar high frequency low power transistors, Type 3DG122
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SJ 794-1974
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Detail specification for silicon NPN epitaxial planar high frequency low power low noise transistors, Type 3DG141
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SJ 795-1974
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Detail specification for silicon NPN epitaxial planar high frequency low power low noise transistors, Type 3DG142
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SJ 796-1974
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Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors, Type 3DG160
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SJ 797-1974
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Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors, Type 3DG161
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SJ 799-1974
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Detail specification for silicon NPN epitaxial planar high frequency low power reverse voltage transistors, Type 3DG170
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SJ 800-1974
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Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors, Type 3DG180
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SJ 801-1974
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Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors, Type 3DG181
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SJ/T 11767-2020
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(Diode power noise parameter test method)
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SJ 20957-2006
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General specification for large power semiconductor laser diode array
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SJ 50033/162-2003
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Semiconductor discrete device. Detail specification of type 2CW1022 for silicon bidirectional voltage regulator diodes
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SJ 50033/164-2003
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Semiconductor discrete devices. Detail specification for type PIN0002 PIN diode
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SJ 50033/165-2003
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Semiconductor discrete device Detail specification of type PIN0003 PIN diode
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SJ 50033/150-2002
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Semiconductor discrete device. Detail specification for silicon voltage-regulator diode for type 2DW230~236
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SJ 50033/151-2002
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Semiconductor discrete device. Detail specification for low-noise silicon voltage-regulator diodes for types 2DW14~18
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SJ 50033/152-2002
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Semiconductor discrete devices. Detail specification for type 2CK140 microwave switch diode
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SJ 50033/153-2002
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Semiconductor discrete devices. Detail specification for type 2CK141 microwave switch diode
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SJ 50033/161-2002
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Semiconductor discrete device. Detail specification for silicon voltage-regulator diode for type 2CW210~251
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SJ 20788-2000
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Measurment method for thermal impedance of semiconductor diodes
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SJ 50033/149-2000
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Semiconductr discrete devices. Detail specification for type 2CW100~121 glass passivation package sillcon voltage-requlator diodes
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SJ 50033/141-1999
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Semiconductor discrete devices. Detail specification for type 2EK150 FaAs high speed switching diode
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SJ 50033/144-1999
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Semiconductor discrete devices. Detail specification for types 2CW50~78 glass passivation package Silicon voltage-regulator diodes
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SJ 50033/115-1997
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Semiconductor discrete devices. Detail specification for type 2CK28 silicon large current switch diode
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SJ 50033/116-1997
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Semiconductor discrete devices. Detail specification for type 2CK29 silicon large current switch diode
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SJ 50033/117-1997
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Semiconductor discrete devices. Detail specification for type 2CK38 silicon large current switch diode
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SJ 50033/118-1997
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Semiconductor discrete devices. Detail specification for type 2EK31 GaAs switching diode
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SJ 50033/123-1997
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Semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN62317
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SJ 50033/124-1997
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Semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN101~105
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SJ 50033/125-1997
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Semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN11~15
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SJ 50033/126-1997
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Semiconductor discrete device. Detail specification for type 2DK13 SCHOTTKY ailicon switching rectifier diode
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SJ 50033/127-1997
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Semiconductor discrete devices. Detail specification for type 2DK14 SCHOTTKY ailicon switching rectifier diode
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SJ 50033/128-1997
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Semiconductor discrete devices. Detail specification for type 2DK15 SCHOTTKY ailicon switching rectifier diode
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SJ 50033/133-1997
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Semiconductor discrete devices. Detail specification for type SY5629-5665A tramsient voltage suppression diodes
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SJ 50033/135-1997
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Semiconductor discrete devices. Detail specification for type 2CZ10 silicon switching rectifier diode
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SJ 50033/136-1997
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Semiconductor optoelectronic devices. Detail specification for red light emitting diode for type GF116
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SJ 50033/137-1997
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Semiconductor optoelectronic devices. Detail specification for orange - Red light emitting diode for type GF216
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SJ 50033/107-1996
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Semiconductor discrete device. Detail specification for Gunn diodes for type 2EY621, 2EY622, 2EY623
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SJ 50033/108-1996
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Semiconductor discrete device. Detail specification for Gunn diodes for type 2EY5671, 2EY5672
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SJ 50033/109-1996
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Semiconductor discrete device. Detail specification for type GJ9032T and GJ9034T semiconductor laser diodes
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SJ 50033/110-1996
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Semiconductor optoelectronic devices. Detail specification for type GR9413 infrared light emitting diode
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SJ/T 10807-1996
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Detail specification for electronic component Glass passivated high voltage rectifier silicon stack for types 2CL61, 2CL62, 2CL63, 2CL64, 2CL65, 2CL66, 2CL67, 2CL68
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SJ/T 10838-1996
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Detailed specifications for electronic components - 2CZ201, 2CZ202 and 2CZ203 switching rectifier diodes (Applicable for certification)
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SJ/T 10954-1996
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Detail specification for electronic component silicon switching diode for type 2CK120
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