Home Cart Quotation Policy About-Us
www.ChineseStandard.net
Database: 221938 (17 Apr 2026)
SEARCH
Path: Home > SJ/T Standards > Page 40

Industry Standard: SJ/T

Prev << ...>> Next
Std ID Description (Standard Title)
SJ 50033/81-1995 Semiconductor discrete devices. Detail specification for type CS0524 GaAs microwave FET
SJ 50033/82-1995 Semiconductor discrete device. Detail specification for type 3DK100 NPN silicon low-power switching transistor
SJ 50033/83-1995 Semiconductor discrete device. Detail specification for type CS139 silicon P-channel MOS enhancement mode field-effect transistor
SJ 50033/84-1995 Semiconductor discrete device. Detail specification for type CS140 silicon N-channel MOS enhancement mode field-effect transistor
SJ 50033/85-1995 Semiconductor discrete device. Detail specification for type CS141 silicon N-channel MOS enhancement mode field-effect transistor
SJ 50033/86-1995 Semiconductor discrete device. Detail specification for type ＣＳ５１１４~ＣＳ５１１６ silicon P-channel deplition mode field-effect transistor
SJ 50033/87-1995 Semiconductor discrete device. Detail specification for type ＣＳ４０９１~ＣＳ４０９３ silicon N-channel deplition mode field-effect transistor
SJ 50033/88-1995 Semiconductor discrete device. Detail specification for type ＣＳ６７６０and ＣＳ６７６２ silicon N-channel deplition mode field-effect transistor
SJ 50033/89-1995 Semiconductor discrete device. Detail specification for type ＣＳ６７６8and ＣＳ６７70 silicon N-channel deplition mode field-effect transistor
SJ 50033/90-1995 Semiconductor discrete device. Detail specification for type 3DK106 NPN silicon low - Power switching transistor
SJ 50033/91-1995 Semiconductor discrete device. Detail specification for type 3CD030 low-fyequency and high-power transistor
SJ 50033/92-1995 Semiconductor discrete device. Detail specification for type 3CD100 low-frequency and high-power transistor
SJ 50033/93-1995 Semiconductor discrete device. Detail specification for type 3DG142 NPN silicon high-frequency low-noise low-power transistor
SJ 50033/94-1995 Semiconductor discrete device. Detail specification for type 3DG143 NPN silicon high-frequency low-noise low-power transistor
SJ 50033/95-1995 Semiconductor discrete device. Detail specification for type 3DG144 NPN silicon high-frequency low-noise low-power transistor
SJ 50033/96-1995 Semiconductor discrete device. Detail specification for type 3DG216 NPN silicon low-power difference matched. Pair transistor
SJ/Z 9170-1995 Specifications for determination of 3CG1321 type (2SB1321-TA) low-power transistors and similar products used for VCR
SJ 50033/10-1994 Discrete semiconductor devices Detailed specifications for 3DK207 power switching transistors
SJ 50033/11-1994 Discrete semiconductor devices Detailed specifications for 3DK208 power switching transistors
SJ 50033/1-1994 Semiconductor discrete device. Detail specification for type 3DA150 high frequency and power transistor
SJ 50033/12-1994 Discrete semiconductor devices Detailed specifications for 3DK209 power switching transistors
SJ 50033/13-1994 Discrete semiconductor devices Detailed specifications for 3DK210 power switching transistors
SJ 50033/14-1994 Discrete semiconductor devices Detailed specifications for 3DK305 power switching transistors
SJ 50033/15-1994 Discrete semiconductor devices Detailed specifications for 3DK306 power switching transistors
SJ 50033/16-1994 Discrete semiconductor devices Detailed specifications for 3DK307 power switching transistors
SJ 50033/17-1994 Discrete semiconductor devices Detailed specifications for 3DK308 power switching transistors
SJ 50033/2-1994 Semiconductor discret device. Detail specification for type 3CK2904, 3CK2904A, 3CK2905 and 3CK2905A PNP silicon cow-power switching transistor
SJ 50033/23-1994 Discrete semiconductor devices Detailed specifications for 3DK309 power switching transistors
SJ 50033/24-1994 Discrete semiconductor devices Detailed specifications for 3DK310 power switching transistors
SJ 50033/30-1994 Semiconductor discrete device. Detail specification for type 3DD155 power transistor
SJ 50033/31-1994 Semiconductor discrete device. Detail specification for type FH101 NPN silicon power Darlington transistor
SJ 50033/32-1994 Semiconductor discrete device. Detail specification for type 3DK312 power switching transistor
SJ 50033/33-1994 Semiconductor discrete device. Detail specification for type FH121 NPN silicon power Darlington transistor
SJ 50033/34-1994 Semiconductor discrete device. Detail specification for type FH129 NPN silicon power Darlington transistor
SJ 50033/36-1994 Semiconductor discrete device. Detail specification for type 3CD050 power transistor
SJ 50033/37-1994 Semiconductor discrete device. Detail specification for type 3DD164 power transistor
SJ 50033/8-1994 Discrete semiconductor devices Detailed specifications for 3DK12 power switching transistors
SJ 50033/9-1994 Discrete semiconductor devices Detailed specifications for 3DK206 power switching transistors
SJ 20306-1993 Detail specification for types FH181A NPN silicon power Darlington transistor
SJ 20307-1993 Detail specification for types FH646 PN silicon power Darlington transistor
SJ 20308-1993 Detail specification for type FH1025 PN silicon power Darlington transistor
SJ 20309-1993 Detail specification for types 3DK10 power Darlington transistor
SJ 20310-1993 Detail specification for types 3DD101 power transistor
SJ 20014-1992 Semiconductor discrete device. Detail specification for PNP silicon low-power transistor for types 3CG110 GP, GT and types GCT classes
SJ 20015-1992 Semiconductor discrete device. Detail specification for PNP silicon high-frequency low-power transistor for types 3DG130 GP, GT and types GCT classes
SJ 20016-1992 Semiconductor discrete device. Detail specification for PNP silicon low-power high-reverse-voltage transistor for types 3DG182 GP, GT and types GCT classes
SJ 3254-1989 Methods for screen of samples of medium-low power transistors for measurements
SJ 2852-1988 Discrete semiconductor devices--Detail specfication for base and cap of high power transistors
SJ 3120-1988 Detail specification for electronic component--Ambient-rated bipolar transistors for high frequency amplification, Type 3DG1215
SJ 3121-1988 Detail specification for electronic components--Ambient-rated bipolar transistors for high frequency amplification, Type 3DG2464
SJ 3122-1988 Detail specification for electronic components--Ambient-rated bipolar transistors for high frequency amplification, Type 3DG3177
SJ 3123-1988 Detail specification for electronic components--Ambient-rated bipolar transistors for high frequency amplification, Type 3DG1779
SJ 2672.1-1986 Detail specification for electronic components--Case-rated 175MHz low voltage bipolar power transistors, Type 3DA301
SJ 2672.2-1986 Detail specification for electronic components--Case-rated 175Mhz low voltage bipolar power transistors, Type 3DA302
SJ 2672.3-1986 Detail specification for electronic components--Case-rated 175MHz low voltage bipolar power transistors, Type 3DA303
SJ 2672.4-1986 Detail specification for electronic components--Case-rated 175MHz low voltag bipolar power transistors, Type 3DA304
SJ 2672.5-1986 Detail specification for electronic components--Case-rated 175MHz low voltage bipolar power transistors, Type 3DA305
SJ 2672.6-1986 Detail specification for electronic components--Case-rated 175MHz low voltage bipolar power transistors, Type 3DA306
SJ 2672.7-1986 Detail specification for electronic components--Case-rated 175MHz low voltage bipolar power transistors, Type 3DA307
SJ 2672.8-1986 Detail specification for electronic components--Case-rated 175MHz low voltage bipolar power transistors, Type 3DA308
SJ 2672.9-1986 Detail specification for electronic components--Case-rated 175MHz low voltage bipolar power transistors, Type 3DA309
SJ 2673.1-1986 Detail specification for electronic components--Case-rated 470MHz low voltage bipolar power transistors, Type 3DA311
SJ 2673.2-1986 Detail specification for electronic components--Case-rated 470MHz low voltage bipolar power transistors, Type 3DA312
SJ 2673.3-1986 Detail specification for electronic components--Case-rated 470MHz low voltage bipolar power transistors, Type 3DA313
SJ 2673.4-1986 Detail specification for electronic components--Case-rated 470MHz low voltage bipolar power transistors, Type 3DA314
SJ 2673.5-1986 Detail specification for electronic components--Case-rated 470MHz low voltage bipolar power transistors, Type 3DA315
SJ 2673.6-1986 Detail specification for electronic components--Case-rated 470MHz low voltage bipolar transistors, Type 3DA316
SJ 2699-1986 Detail specification for silicon NPN high frequency low noise low power transistors, Type 3DG388
SJ 2700-1986 Detail specification for silicon NPN high frequency medium power transistors, Type 3DG2060
SJ 2701-1986 Detail specification for silicon PNP low power transistors, Type 3DX673
SJ 2702-1986 Detail specification for silicon NPN high frequency low power transistors, Type 3DG458
SJ 2271-1983 Type 3DG104 silicon NPN epitaxial planar super-high frequency low power triodes
SJ 2272-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG44
SJ 2273-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG81
SJ 2274-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG113
SJ 2275-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG85
SJ 2276-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG114
SJ 2277-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG115
SJ 2278-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG72
SJ 2279-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG123
SJ 2281-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG132
SJ 2282-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG143
SJ 2283-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG144
SJ 2284-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG145
SJ 2285-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG146
SJ 2286-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG147
SJ 2287-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Tuype 3DG148
SJ 2288-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG149
SJ 2289-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG151
SJ 2290-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG151
SJ 2291-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG153
SJ 2292-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG154
SJ 2293-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG155
SJ 2356-1983 Detail specification for silicon PNP low frequency low voltage high power transistors, Type 3CD347
SJ 2357-1983 Detail specification for silicon PNP low frequency low voltage high power transistors, Type 3CD149, 3CD150 and 3CD349
SJ 2358-1983 Detail specification for silicon PNP low frequency low voltage high power transistors, Type 3CD151, 3CD152 and 3CD351
SJ 2359-1983 Detail specification for silicon PNP low frequency low voltage high power transistors, Type 3CD153, 3CD154 and 3CD353
SJ 2360-1983 Detail specification for silicon PNP low frequency low voltage high power transistors, Type 3CD155, 3CD156 and 3CD355
SJ 2361-1983 Detail specification for silicon PNP low frequency low voltage high power low frequency low voltage high power transistors, Type 3CD157, 3CD158 and 3CD357
SJ 2362-1983 Detail specification for silicon PNP low frequency low voltage high power transistors, Type 3CD159 and 3CD160
Refund Policy Privacy Policy Terms of Service