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GB/T 43798-2024: Test method of positive photoresist for manufacturing of flat panel display array
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GB/T 43798-2024: Test method of positive photoresist for manufacturing of flat panel display array

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ICS 31.030 CCSL90 National Standards of People's Republic of China Positive photoresist materials for flat panel display arrays Test Methods displayarray Released on 2024-03-15 2024-10-01 Implementation State Administration for Market Regulation The National Standardization Administration issued

Table of Contents

Preface III 1 Scope 1 2 Normative references 1 3 Terms and Definitions 1 4 Test Conditions 2 4.1 Environmental conditions 2 4.2 Reagents and Materials 2 4.3 Other Supporting Facilities 2 5 Test Item 2 5.1 Film Moire 2 5.2 Exposure 4 5.3 Exposure test to observe the integrity of the pattern 6 5.4 Critical Dimension (CD) 6 5.5 Residual film rate 7 5.6 Solid content 8 5.7 Liquid Particle Counting 9 5.8 Viscosity 10 5.9 Relative density 11 5.10 Water mass fraction 11 5.11 Metal impurity content 11 6 Test report 13

Foreword

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1.Structure and drafting rules for standardization documents" Drafting. Please note that some of the contents of this document may involve patents. The issuing organization of this document does not assume the responsibility for identifying patents. This document was proposed and coordinated by the National Technical Committee for Semiconductor Equipment and Materials Standardization (SAC/TC203). This document was drafted by. BOE Technology Group Co., Ltd., Shanghai Tongcheng Electronic Materials Co., Ltd., China Electronics Technology Standards Institute of Chemistry, Fuyang Xinyihua Materials Technology Co., Ltd., Jiangyin Runma Electronic Materials Co., Ltd., Fujian Hongguang Semiconductor Materials Co., Ltd. company. The main drafters of this document are. Yang Lan, Cheng Long, Wu Yiran, Zhao Junsha, Cao Kewei, Li Lin, Wu Jingwei, Yue Shuang, Li Lu, Ge Yeming, He Ke, Zeng Chengcai and Yuan Xiaolei. Positive photoresist materials for flat panel display arrays Test Methods

1 Scope

This document describes the test methods for positive photoresist materials used in flat panel display arrays. This document is applicable to the performance testing of positive photoresist materials used in the manufacture of display arrays such as liquid crystal display devices and organic light-emitting display devices.

2 Normative references

The contents of the following documents constitute the essential clauses of this document through normative references in this document. For referenced documents without a date, only the version corresponding to that date applies to this document; for referenced documents without a date, the latest version (including all amendments) applies to This document. GB/T 23942 General rules for inductively coupled plasma atomic emission spectrometry of chemical reagents GB/T 25915.1 Clean rooms and related controlled environments Part 1.Classification of air cleanliness by particle concentration GB/T 33087 Specifications and test methods for high purity water for instrumental analysis GB/T 37403 Tetramethylammonium hydroxide developer for thin film transistor liquid crystal displays (TFT-LCD) GB/T 39486 General rules for inductively coupled plasma mass spectrometry analysis of chemical reagents

3 Terms and definitions

The following terms and definitions apply to this document. 3.1 Exposure energy The dose of light energy or other radiation energy absorbed per unit area of photoresist material. Note. It is used to measure the sensitivity of photoresist materials to exposure. In optical exposure, under given exposure light intensity conditions, the sensitivity is usually adjusted by the exposure time. Exposure. 3.2 Substrate Substrate material for photoresist coating. Note. In this document, the substrate wafer may be a single crystal silicon wafer, an epitaxial silicon wafer, or a glass wafer for a flat panel display, etc. 3.3 Softbake/prebake After the photoresist material passes through the coating process, the solvent in the photoresist film is evaporated through an oven or hot plate to form the adhesive required for the exposure process. Membrane process. 3.4 Hardbake The photoresist material is baked in an oven or hot plate after being coated, pre-baked, exposed and developed. Note. The solvent in the photoresist film is further evaporated so that it can be used in subsequent processes. 3.5 coating film mura The uneven thickness or density of the photoresist material, the presence of foreign matter in the photoresist material, the unstable coating process, etc. may cause the film surface to form ...