GB/T 4937.22-2018 English PDFUS$359.00 · In stock
Delivery: <= 3 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 4937.22-2018: Semiconductor devices -- Mechanical and climatic test methods -- Part 22: Bond strength Status: Valid
Basic dataStandard ID: GB/T 4937.22-2018 (GB/T4937.22-2018)Description (Translated English): Semiconductor devices -- Mechanical and climatic test methods -- Part 22: Bond strength Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: L40 Classification of International Standard: 31.080.01 Word Count Estimation: 18,191 Date of Issue: 2018-09-17 Date of Implementation: 2019-01-01 Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration GB/T 4937.22-2018: Semiconductor devices -- Mechanical and climatic test methods -- Part 22: Bond strength---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order. Semiconductor devices - Mechanical and climatic test methods - Part 22. Bond strength ICS 31.080.01 L40 National Standards of People's Republic of China Semiconductor device mechanical and climatic test methods Part 22. Bond strength Part 22. Bondstrength (IEC 60749-22.2002, IDT) Published on.2018-09-17 2019-01-01 implementation State market supervision and administration China National Standardization Administration issued ContentForeword III 1 Scope and purpose 1 1.1 Test Description 1 1.2 Test device (applicable to all methods) 1 2 Method A. Lead Tension (Single Bonding Point) and Method B. Lead Tension (Double Bonding Point) (see Appendix A) 1 2.1 Scope 1 2.2 General description of the test 1 3 Method C. Bonding and pulling off 2 3.1 Scope 2 3.2 Procedure 2 3.3 Applied force 2 3.4 Failure criterion 2 3.5 Failure Category 2 4 Method D. Bonding shear (for flip-chip bonding) 3 4.1 Scope 3 4.2 Procedure 3 4.3 Applied force 3 4.4 Failure criterion 3 4.5 Failure Category 3 5 Method E. push open test and method F. pull open test 3 5.1 Scope 3 5.2 Method E Procedure 3 5.3 Method F Procedure 4 5.4 Failure criteria for Method E and Method F 4 5.5 Applied Force (Applicable to Method E and Method F) 4 6 Method G. Lead Ball Shear Test 4 6.1 Scope 4 6.2 Overview 4 6.3 Terms and Definitions 5 6.4 Equipment and materials 7 6.5 Procedure 7 6.6 Acceptable test limits 8 7 The following details are specified in the relevant documents 10 Appendix A (Normative) Guide 12ForewordGB/T 4937 "Mechanical and Climatic Test Methods for Semiconductor Devices" consists of the following components. --- Part 1. General; --- Part 2. Low pressure; --- Part 3. External visual inspection; --- Part 4. Strongly accelerated steady-state damp heat test (HAST); ---Part 5. Steady-state temperature and humidity bias life test; ---Part 6. High temperature storage; --- Part 7. Internal water vapor content test and other residual gas analysis; --- Part 8. Sealing; ---Part 9. Logo durability; --- Part 10. Mechanical shock; --- Part 11. rapid temperature change double tank method; --- Part 12. Sweeping vibration; --- Part 13. Salt spray; --- Part 14. Terminal strength (lead robustness); ---Part 15. Resistance to soldering of through-hole mounting devices; --- Part 16. Particle collision noise detection (PIND); ---Part 17. Neutron irradiation; ---Part 18. Ionizing radiation (total dose); ---Part 19. Chip shear strength; --- Part 20. The combined effects of moisture-resistant and soldering heat on plastic surface mount devices; ---Part 20-1. Operation, packaging, marking and transport of surface mount devices sensitive to the combined effects of moisture and soldering heat; ---Part 21. Solderability; ---Part 22. Bonding strength; --- Part 23. High temperature working life; --- Part 24. Accelerated moisture-resistant and non-biased strong accelerated stress test (HSAT); ---Part 25. Temperature cycling; --- Part 26. Electrostatic discharge (ESD) sensitivity test human body model (HBM); --- Part 27. Electrostatic discharge (ESD) sensitivity test mechanical model (MM); --- Part 28. Electrostatic discharge (ESD) sensitivity test, charged device model (CDM), device level; ---Part 29. Latch test; --- Part 30. Pre-treatment of unsealed surface mount devices prior to reliability testing; --- Part 31. Flammability of plastic encapsulated devices (internal); --- Part 32. Flammability of plastic encapsulated devices (external); ---Part 33. Accelerated moisture resistance without bias high pressure cooking; --- Part 34. Power cycling; --- Part 35. Acoustic scanning microscopy of plastic electronic components; ---Part 36. Constant acceleration; --- Part 37. Plate-level drop test method using accelerometers; --- Part 38. Soft error test methods for semiconductor memory devices; --- Part 39. Measurement of moisture diffusivity and water dissolution rate of raw materials for semiconductor components; --- Part 40. Plate-level drop test method using tension meter; --- Part 41. Reliability test methods for non-volatile memory devices; --- Part 42. Storage of temperature and humidity; --- Part 43. Guide to the reliability identification scheme for integrated circuits (ICs); --- Part 44. Test method for neutron beam irradiation single particle effect of semiconductor devices. This part is the 22nd part of GB/T 4937. This part is drafted in accordance with the rules given in GB/T 1.1-2009. This section uses the translation method equivalent to IEC 60749-22.2002 "Semiconductor device mechanical and climatic test methods Part 22. Bond strength. Please note that some of the contents of this document may involve patents. The issuing organization of this document is not responsible for identifying these patents. This part was proposed by the Ministry of Industry and Information Technology of the People's Republic of China. This part is under the jurisdiction of the National Semiconductor Device Standardization Technical Committee (SAC/TC78). This section drafted by. China Electronics Technology Group Corporation, the thirteenth research institute, Shenzhen Institute of Standard Technology. The main drafters of this section. Selection, Peng Hao, Gao Ruixin, Liu Wei, Gao Jinhuan, Ma Kun. Semiconductor device mechanical and climatic test methods Part 22. Bond strength1 Scope and purposeThis part of GB/T 4937 applies to semiconductor devices (discrete devices and integrated circuits). The purpose of this section is to measure the bond strength or determine if the bond strength meets the specified requirements. 1.1 Test Description Seven test methods are specified, each of which has different purposes, as follows. --- Method A and Method B. Test the bonding strength inside the device by directly applying a tensile force to the inner leads; --- Method C. for bonding outside the device, applying pull-off stress between the lead or the lead and the wiring board or substrate; --- Method D. for internal bonding, applying shear stress between the chip and the substrate or to a similar surface bonding structure; --- Method E and Method F. for external bonding, applying a push-on stress or a pull-up stress between the chip and the substrate; --- Method G. Used to test the strength of wire bond shear resistance. 1.2 Test device (applicable to all methods) The test device shall include equipment that applies specified stresses at the bond points, leads or terminals as required by the specified test method. The device Calibrated measurements and indications can be provided for stress applied in failure (in N). The device measures force within 100mN (package Including 100mN) should have an accuracy of ±2.5mN, the force between 100mN and 500mN should have an accuracy of ±5mN, and the measurement is super A force of over 500 mN should have an accuracy of ±2.5% of the indicated value. 2 Method A. Lead Tension (Single Bond Point) and Method B. Lead Tension (Double Bond Point) (see Appendix A) 2.1 Scope The method is suitable for use in a semiconductor device package with internal leads bonded by soldering, thermocompression bonding, ultrasonic welding and other related technologies Lead-to-die bonding, lead-to-substrate bonding, or inner lead-lead bonding. 2.2 General description of the test 2.2.1 Method A procedure The leads connecting the chips or the substrate are cut so that the tensile test can be performed at both ends. In the case of a short lead, close to a certain end The lead is broken to perform a tensile test at the other end. For pin-type bonding, use appropriate equipment to secure the leads, then lead or clamp the leads The device of the wire applies a pulling force that does not exceed an angle of 5° with the surface of the chip or substrate. 2.2.2 Method B Procedure A hook is inserted under the lead connecting the chip or the substrate and the lead end, and the hook is applied to the hook after the device is fixed. Try to be on the lead The center applies a pulling force, and the angle between the pulling force and the normal line of the chip or the substrate surface or the perpendicular to the line connecting the two bonding points is not more than 5°. 2.2.3 Force applied (applicable to Method A and Method B) Gradually apply a pulling force to the lead or bond point to crack [a in 2.2.4), or to achieve b) in the specified minimum tensile force 2.2.4. 2.2.4 Failure criteria The failure criteria are as follows. a) Record the value of the pull force at the time of cracking of the lead or bond point and compare it with the values given in Table 2 to determine if it is acceptable. in case There is no corresponding lead diameter in Table 2, and the curve in Figure 3 should be used to determine the limit value of the bond pull. This curve only applies The bonding tension is perpendicular to the chip. b) Gradually apply tension to the specified minimum. If the lead and bond points are not cracked, the bond is considered acceptable. Note. Method B corrects the pull value according to the information provided in Appendix A. 2.2.5 Failure category When specified, the cracking of the leads or bonding points is classified as follows. a) the lead is broken at the necking point (the position where the section is reduced due to the bonding process); b) the lead is broken at the non-necked point; c) the bonding on the chip (the interface between the lead and the metallization layer) fails; d) the bonding of the substrate, the package stud or the non-chip position (the interface between the lead and the metallization layer) fails; e) the metallization layer is lifted from the chip; f) the metallization layer is lifted from the substrate or package terminal; g) chip rupture; h) The base is ruptured. Note. Method B is not recommended for measuring the absolute value of bond strength (see Appendix A). However, this method can be used as a bond quality monitoring in the production process. 3 Method C. Bonding pull off 3.1 Scope This method is typically used for external bonding of device packages. 3.2 Procedure The lead or the lead and the device package are fixed, and a pulling force is applied at an angle between the lead or the lead and the wiring board or the substrate. If There is no other rule, the angle is 90°. 3.3 Applied force Gradually apply tension to the lead (or lead) or bond point crack (see 3.4.1), or to achieve the specified minimum pull (see 3.4.2). 3.4 Failure criteria 3.4.1 Record the tensile value at the point of cracking of the bond point and compare it with the values given in Table 2 to determine if it is acceptable. If not in Table 2 For the corresponding lead diameter, the curve in Figure 3 should be used to determine the limit of the bond pull. This curve only applies to bond pull perpendicular to The case of a wiring board or a pedestal. The tension is gradually applied to the specified minimum value, and only the bonding point itself is first invalidated, and the test result is effective. only Cracking of the bond point itself can be considered as invalidation. 3.4.2 Gradually apply tension to the specified minimum. If the lead (or the lead) and the bonding point are not cracked, the bond is considered qualified. 3.5 Failure category When specified, the cracking of the leads or terminals or bonding points should be classified as follows. a) the lead or the lead end is cracked in the deformation zone (welding affected zone); b) the lead or the lead end is cracked in the non-bonding process affected zone; c) failure at the bonding interface (welding in the solder or between the lead or the lead and the wiring board or the substrate conductive layer bonded thereto) interface); d) the conductive layer is lifted from the wiring board or the substrate; e) The inside of the wiring board or substrate is broken. 4 Method D. Bonding shear (for flip-chip bonding) 4.1 Scope This method is generally used to verify the internal bonding between the semiconductor chip of the surface bonding structure and the substrate. Can also be used to inspect substrates and installation Bonding between the intermediate carrier or sub-substrate of the chip. 4.2 Procedure Use a suitable tool or file to contact the chip (or carrier) at a location just above the main substrate, perpendicular to the chip (or Stress is applied to one side of the body and parallel to the direction of the main substrate, and the bonding failure is caused by the shear stress. 4.3 Applied force Gradually apply tension to the bond point to crack (see 4.4.1), or to achieve the specified minimum stress (see 4.4.2). 4.4 Failure criteria 4.4.1 Record the stress values at the time of bond failure to determine if it is acceptable. The stress should be no less than 50mN times the number of bonding points. Stress applied When the bonding point itself first fails, the test result is valid. Only the crack of the bond point itself can be considered as invalid. 4.4.2 Alternatively, increase the stress to 50mN times the number of bonding points. If the bond point and the substrate or chip are not cracked, The bond can be considered acceptable. 4.5 Failure Category When specified, failures should be classified as follows. a) failure of the bonding material or bonding base when applicable; b) the chip (or carrier) or substrate is broken (ie, a portion of the chip or substrate immediately below the bonding point moves); c) The metallization layer is lifted (ie, the metallization layer or bonding pedestal is separated from the chip/carrier or substrate). 5 Method E. push open test and method F. pull open test 5.1 Scope This method is used for devices with beam leads. Method E is typically used for process control, for semiconductor wafers bonded to a specific substrate, and therefore not suitable for production batch or inspection Random sampling in the inspection lot. Method F is typically used for beam lead samples bonded to a ceramic substrate or other suitable substrate. 5.2 Method E procedure A metallized substrate with holes is used. The hole should be close to the center of the substrate and large enough to provide clearance for the push-off tool, but not so large Bonding area. The push-off tool should be large enough to minimize device breakage during the test, but not as large as the beam fixed in the bond area Lead contact. Firmly secure the substrate and insert the push-open tool through the small hole. The push-off tool should not cause significant impact when it comes into contact with the device (less than 0.25mm/min). The lower side of the bonding device is applied at a constant rate to a value specified in 5.5 or a failure occurs. 5.3 Method F Procedure The calibrated pull-out device shall include a pull-off tool (eg, a nichrome wire thermoelectric ring) that is attached to the beam lead chip A hard setting adhesive material (for example, a heat-sensitive polyvinyl acetate resin) is connected. Make sure that the adhesive material does not spread under the beam or the bottom of the chip unit. The base is securely held in the pull-out fixture and the pull-out tool should maintain a fixed mechanical connection with the adhesive material. Within 5° of the device normal Gradually increase the stress, at least to the value specified in 5.5 or the upper surface of the chip is 2.5 mm away from the substrate. 5.4 Failure criteria for Method E and Method F The failure criteria are as follows. a) the semiconductor chip is broken; b) the beam lead is lifted from the bonding point; c) the beam lead breaks at the bond; d) the beam lead is broken at the edge of the semiconductor chip; e) the beam lead is broken between the bonding point and the edge of the semiconductor chip; f) the bonding point is lifted from the substrate; g) The metallization layer is lifted (the metallization layer is separated from the chip or bonding region). 5.5 Applied Force (Applicable to Method E and Method F) For a nominal beam width of non-deformed (before bonding), a force of 500 mN is applied per mm (straight line). Bond strength should be divided by breaking stress The nominal beam width of the front is determined. 6 Method G. lead ball shear test 6.1 Scope Method G was used to test the strength of wire bond shear resistance. It is recommended to add this method outside of Method A and Method B. It can provide More information about the robustness of metallurgical bonding, relative to methods A and B, is more concerned with bonding itself than with exposure Bonding is not directly related to failure (such as breakage of the lead at the root, neck, and span). The method provides a standard procedure for detecting a series of spherical bond shear strengths bonded by thermoforming or thermosonic bonding techniques. 6.2 Overview Bonding shearing uses a chisel-like tool to cut or push a spherical or wedge-shaped bond point away from the bond area (see Figure 1). Record score The force of departure is used as the bonding shear force. If the bonding shear force of the gold ball bonding is related to the diameter of the bonding ball, the gold ball bonding point and the key may be indicated. The metallurgical bonding quality between the metallization layers of the junction is shown in Figure 2 and Table 1. Aluminum wedge bond bonding shear force, with the metal of the carrier The wire tensile strength comparison can indicate the integrity of the weld between the aluminum wire and the metallization layer of the bond zone. Spherical bonding includes a larger spherical surface or a nail head portion of the lead (hot-welding or first-time bonding operation in thermocompression or ultrasonic welding or both) In the process, the base bonding zone and the spherical bonding bonding zone interface or the welding surface are obtained. These test methods are spherical bonds of small diameter leads (from 18μm to 76μm), which are commonly used in integrated circuits and hybrid microelectronics. In the component. Only when the height and diameter of the ball are large enough and there is sufficient distance from the adjacent influential structure, allowing the periphery of the bonded ball to be removed The area so that the shear test tool is placed between adjacent bond points. This method is destructive. Suitable for process development or process control or quality assurance with a suitable sampling plan. 6.3 Terms and definitions 6.3.1 Cut mode definition (see Figure 1) definitionofshearmodes 6.3.1.1 Mode 1---bonding out of mode1-ballift The entire ball bond point is detached from the bond area leaving only an impression on the bond area. A small amount of intermetallic compound residue on the bonding area Or no residue. 6.3.1.2 Mode 2 - Bonding tear/ball bond tear/wedge bond shear mode2-bondshear/balshear/wedgeshear The bonded spheres are separated from the intermetallic compound. An intermetallic compound of a bonding sphere and a portion of gold remain on the metallization layer of the bonding region. 6.3.1.3 Mode 3 - Bonding area is out of mode3-bondpadlift The bonding zone metallization layer is separated from the substrate. Some bonding zone metallization layers and intermetallic compounds are attached to the bonding balls. 6.3.1.4 Mode 4---Sag (broken) mode4-cratering(chip-out) The bonding area is lifted up and a part of the substrate is taken up. The bonding area metallization layer and a portion of the s......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 4937.22-2018_English be delivered?Answer: Upon your order, we will start to translate GB/T 4937.22-2018_English as soon as possible, and keep you informed of the progress. The lead time is typically 1 ~ 3 working days. 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