GB/T 4937.26-2023 English PDFUS$804.00 · In stock
Delivery: <= 5 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 4937.26-2023: Semiconductor devices - Mechanical and climate test methods - Part 26: Electrostatic discharge(ESD)sensitivity testing - Human body model(HBM) Status: Valid
Basic dataStandard ID: GB/T 4937.26-2023 (GB/T4937.26-2023)Description (Translated English): Semiconductor devices - Mechanical and climate test methods - Part 26: Electrostatic discharge(ESD)sensitivity testing - Human body model(HBM) Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: L40 Classification of International Standard: 31.080.01 Word Count Estimation: 46,439 Date of Issue: 2023-09-07 Date of Implementation: 2024-04-01 Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration GB/T 4937.26-2023: Semiconductor devices - Mechanical and climate test methods - Part 26: Electrostatic discharge(ESD)sensitivity testing - Human body model(HBM)---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order. ICS 31.080.01 CCSL40 National Standards of People's Republic of China Mechanical and climatic test methods for semiconductor devices Part 26.Electrostatic discharge (ESD) susceptibility testing Human Body Model (HBM) (IEC 60749-26.2018,IDT) Published on 2023-09-07 2024-04-01 Implementation State Administration for Market Regulation Released by the National Standardization Administration Committee Table of contentsPreface III Introduction IV 1 Scope 1 2 Normative reference documents 1 3 Terms and Definitions 1 4 Instruments and Equipment4 4.1 Waveform confirmation equipment 4 4.2 Oscilloscope 4 4.3 Additional requirements for digital oscilloscopes 4 4.4 Current sensor (induced current probe) 4 4.5 Evaluation load 5 4.6 Human Body Model Simulator 5 4.7 HBM test equipment parasitic characteristics 5 5 Stress testing equipment verification and routine validation 6 5.1 General requirements for HBM test equipment evaluation 6 5.2 Test procedure 6 5.3 HBM test equipment verification 9 5.4 Test fixture board verification for socket-based test equipment 10 5.5 General waveform inspection requirements 11 5.6 High voltage discharge path inspection 12 5.7 Test equipment waveform recording 12 5.8 Security12 6 Grading Procedure 13 6.1 Device Classification13 6.2 Parameter and functional testing 13 6.3 Device stress test 13 6.4 Pin classification 13 6.5 Pin grouping 15 6.6 Pin stress combination 15 6.7 HBM stress for low parasitic simulator 18 6.8 Post-stress testing 18 7 Failure criteria 18 8 Device Classification19 Appendix A (informative) HBM test method flow 20 Appendix B (informative) HBM test equipment parasitic characteristics 23 B.1 Optional trailing edge pulse detection equipment/instrument23 B.2 Optional pre-pulse voltage rise test equipment25 B.3 Capacitive parasitic effects of normally open relay test equipment 26 B.4 Test to determine whether the HBM simulator is a low-parasitic simulator26 Appendix C (Informative) Examples of testing products using Table 2, Table 3, or Table 2 and dual-lead HBM test equipment 28 C.1 Overview 28 C.2 Procedure A (according to Table 2) 29 C.3 Optional Procedure B (according to Table 3) 30 C.4 Optional Procedure C (according to Table 2) 31 Appendix D (Informative) Coupled Non-Power Pin Pair Example 33 Appendix E (normative) Sampling test method for non-power supply (I/O) pins with the same name 34 E.1 Purpose and Overview34 E.2 Pin Sampling Overview and Statistical Details 34 E.3 IC product selection 35 E.4 Randomly select and test I/O pins with the same name35 E.5 Determine if sampling can be done using the provided Excel spreadsheet36 E.6 HBM test of I/O pin sample with the same name 36 E.7 Test example of sampling I/O pins with the same name36 Reference 39ForewordThis document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents" Drafting. This document is Part 26 of GB/T 4937 "Mechanical and Climatic Test Methods for Semiconductor Devices". GB/T 4937 has been released The following parts. ---Part 1.General provisions; ---Part 2.Low pressure; ---Part 3.External visual inspection; ---Part 4.Highly Accelerated Steady State Hot and Damp Test (HAST); ---Part 11.Rapid temperature change double liquid tank method; ---Part 12.Sweep vibration; ---Part 13.Salt spray; ---Part 14.Terminal strength (lead firmness); ---Part 15.Soldering heat resistance of through-hole mounting devices; ---Part 17.Neutron irradiation; ---Part 18.Ionizing radiation (total dose); ---Part 19.Chip shear strength; ---Part 20.Resistance of plastic surface-mounted devices to the combined effects of moisture and welding heat; ---Part 20-1.Handling, packaging, marking and transportation of surface-mounted devices sensitive to the combined effects of moisture and soldering heat; ---Part 21.Solderability; ---Part 22.Bonding strength; ---Part 23.High temperature working life; ---Part 26.Electrostatic discharge (ESD) sensitivity test human body model (HBM); ---Part 27.Electrostatic discharge (ESD) sensitivity test machine model (MM); ---Part 30.Pretreatment of non-sealed surface-mounted devices before reliability testing. ---Part 31.Flammability of plastic wrappers (caused internally); ---Part 32.Flammability of plastic wrappers (externally caused); ---Part 42.Temperature and humidity storage. This document is equivalent to IEC 60749-26.2018 "Mechanical and climatic test methods for semiconductor devices - Part 26.Electrostatic discharge" (ESD) Sensitivity Test Human Body Model (HBM)》. Please note that some content in this document may be subject to patents. The publisher of this document assumes no responsibility for identifying patents. This document is proposed by the Ministry of Industry and Information Technology of the People's Republic of China. This document is under the jurisdiction of the National Semiconductor Device Standardization Technical Committee (SAC/TC78). This document was drafted by. China Electronics Technology Group Corporation Thirteenth Research Institute, Hebei Beixin Semiconductor Technology Co., Ltd., Anhui Rongchuang Xinke Automation Equipment Manufacturing Co., Ltd., Beijing Saidi Junxin Electronic Product Testing Laboratory Co., Ltd., Hebei Zhongdian Kehang Testing Technical Service Service Co., Ltd., Jiejie Semiconductor Co., Ltd., Foshan Chuandong Magnetoelectric Co., Ltd. The main drafters of this document. Gao Lei, Zhang Kui, Lu Shibin, Chi Lei, Zhai Yuying, Peng Hao, Gao Jinhuan, Zhang Ruixia, Huang Jie, Zhao Peng, Xu Xin, Wei Bing, Li Chonglin, Yan Tianbao, Jin Zhe.IntroductionSemiconductor devices are common basic products in the electronics industry chain and are the most basic units in electronic systems. GB/T 4937 "Semiconductors" "Mechanical and Climatic Test Methods for Semiconductor Devices" is a basic and universal standard for testing semiconductor devices. It is important for the evaluation and assessment of semiconductor devices. The quality and reliability of the device play an important role and are planned to be composed of 44 parts. ---Part 1.General principles. The purpose is to specify general guidelines for mechanical and climatic testing methods of semiconductor devices. ---Part 2.Low pressure. The purpose is to test the ability of components and materials to avoid electrical breakdown failure. ---Part 3.External visual inspection. The purpose is to detect whether the materials, design, structure, marking and process quality of semiconductor devices comply with the procurement requirements. Purchase document requirements. ---Part 4.Strongly Accelerated Steady State Hot and Damp Test (HAST). The purpose is to specify the strongly accelerated steady-state hot and humid test (HAST) to detect Test the reliability of non-hermetic packaged semiconductor devices in humid environments. ---Part 5.Steady-state temperature and humidity bias life test. The purpose is to specify the steady-state temperature and humidity offset life test to detect non-airtight Reliability of packaged semiconductor devices in humid environments. ---Part 6.High temperature storage. The purpose is to detect the impact of high-temperature storage on semiconductor devices without applying electrical stress. ---Part 7.Internal water vapor measurement and other residual gas analysis. The purpose is to detect the quality of the packaging process and provide information about the gas information on the long-term chemical stability of the body in the shell. ---Part 8.Sealing. The purpose is to detect the leakage rate of semiconductor devices. ---Part 9.Marking durability. The purpose is to detect mark durability on semiconductor devices. ---Part 10.Mechanical impact. The purpose is to test the adaptability of semiconductor devices and printed board assemblies to moderately severe impacts. ability. ---Part 11.Rapid temperature change double liquid tank method. The purpose is to specify rapid temperature changes in semiconductor devices (double bath method) Test procedures, failure criteria, etc. ---Part 12.Sweep vibration. The purpose is to detect the impact of vibration on semiconductor devices within a specified frequency range. ---Part 13.Salt spray. The purpose is to detect the corrosion resistance of semiconductor devices. ---Part 14.Terminal strength (lead firmness). The purpose is to detect the tightness of semiconductor device lead/package interface and leads. Solidity. ---Part 15.Soldering heat resistance of through-hole mounting devices. The purpose is to detect the wave resistance of through-hole mounted solid-state packaged semiconductor devices. The ability of the soldering iron or soldering iron to create thermal stress on the leads. ---Part 16.Particle Collision Noise Detection (PIND). The purpose is to specify the detection method for the presence of free particles in cavity devices. ---Part 17.Neutron irradiation. The purpose is to detect the susceptibility of semiconductor devices to performance degradation in neutron environments. ---Part 18.Ionizing radiation (total dose). The purpose is to provide for the evaluation of the effects of low dose rate ionizing radiation on semiconductor devices. Rapid annealing test method. ---Part 19.Chip shear strength. The purpose is to detect the materials and processes used to mount semiconductor chips on tube sockets or substrates. Completeness of artistic steps. ---Part 20.Plastic surface-mounted devices are resistant to the combined effects of moisture and welding heat. The purpose is to simulate storage in a warehouse or dry The moisture absorbed by plastic-packaged surface-mounted semiconductor devices in a dry packaging environment is used to evaluate their resistance to soldering heat. ---Part 20-1.Handling, packaging, marking and transportation of surface-mounted devices sensitive to the combined effects of moisture and soldering heat. The purpose is Specifies methods for handling, packaging, transportation, and use of plastic-encapsulated surface-mounted semiconductor devices that are sensitive to the combined effects of moisture and soldering heat. ---Part 21.Solderability. The purpose is to specify the terminals of component packages soldered using lead-tin solder or lead-free solder. Solderability test procedure. ---Part 22.Bonding strength. The purpose is to detect the bonding strength of semiconductor devices. ---Part 23.High temperature working life. The purpose is to specify the effects of bias conditions and temperature on solid-state devices over time. experiment method. ---Part 24.Accelerated moisture resistance without bias strong accelerated stress test. The purpose is to detect non-hermetically sealed solid-state devices in humid environments. reliability in the environment. ---Part 25.Temperature cycling. The purpose is to detect semiconductor devices, components and circuit board assemblies subjected to extreme high temperatures and extreme The ability of low-temperature alternating effects to induce mechanical stress. ---Part 26.Electrostatic discharge (ESD) sensitivity test Human Body Model (HBM). The purpose is to specify reliable, repeatable HBEESD test method. ---Part 27.Electrostatic discharge (ESD) sensitivity test machine model (MM). The purpose is to specify reliable, repeatable MMESD test method. ---Part 28.Electrostatic discharge (ESD) sensitivity testing at the charged device model (CDM) device level. The purpose is to provide reliable, Repeatable CDMESD test method ---Part 29.Latching test. The purpose is to specify methods for detecting latch-up characteristics of integrated circuits and latch-up failure criteria. ---Part 30.Pretreatment of non-sealed surface-mounted devices before reliability testing. The purpose is to specify unsealed surface mounters Standard procedure for pre-processing parts before reliability testing. ---Part 31.Flammability of plastic-encapsulated devices (caused internally). The purpose is to detect whether the plastic package components are damaged due to overload. The body heats up and burns. ---Part 32.Flammability of plastic-encapsulated devices (externally caused). The purpose is to detect whether the plastic packaged device is caused by external heating. combustion. ---Part 33.Accelerated moisture-resistant non-offset high-pressure cooking. The purpose is to confirm the internal failure mechanism of semiconductor device packages. ---Part 34.Power Cycle. The purpose is to detect cyclic power losses by applying cyclic power losses to the internal chips and connectors of semiconductor devices. Test the thermal and mechanical stress resistance of semiconductor devices. ---Part 35.Acoustic microscopic examination of plastically sealed electronic components. The purpose is to stipulate the use of acoustic microscopes on plastic-encapsulated electronic components. Method for detecting defects (delamination, cracks, voids, etc.). ---Part 36.Steady-state acceleration. The purpose is to specify the test method for steady-state acceleration of cavity semiconductor devices to detect their structure. Structural and mechanical type defects. ---Part 37.Board-level drop test method using accelerometer. The purpose is to specify board level drop testing using accelerometers The method enables repeatable detection of drop tests on surface-mounted devices while reproducing common failure modes during product-level testing. ---Part 38.Soft error test methods for semiconductor devices with memory. The purpose is to specify the operation of semiconductor devices with memory Test method for soft error susceptibility in high-energy particle environments (such as alpha radiation). ---Part 39.Measurement of moisture diffusivity and water solubility of organic materials used in semiconductor devices. The purpose is to specify applications in semiconductor Method for measuring the moisture diffusivity and water solubility of organic materials used in bulk device encapsulation. ---Part 40.Board-level drop test method using strain gauges. The purpose is to specify a board level drop test method using strain gauges. Law. Repeatable detection of surface mount device drop tests while reproducing failure modes common during product-level testing ---Part 41.Non-volatile memory reliability test methods. The purpose is to specify the effective endurance, data According to the requirements of holding and temperature cycle testing. ---Part 42.Temperature and humidity storage. The purpose is to specify test methods for testing the ability of semiconductor devices to withstand high temperature and high humidity environments. ---Part 44.Neutron irradiation single event effect (SEE) test method for semiconductor devices. The purpose is to specify the detection of high-density clusters Test methods for single event effects (SEE) in integrated circuits. GB/T 4937 (all parts) adopts IEC 60749 (all parts) in one-to-one correspondence to ensure that the semiconductor device test methods are consistent with national standards. consistent with international standards to achieve semiconductor device inspection methods, reliability evaluation, and quality levels in line with international standards. By formulating this series of standards, it is determined Unify test methods and stresses, and improve the semiconductor device standard system. Mechanical and climatic test methods for semiconductor devices Part 26.Electrostatic discharge (ESD) susceptibility testing Human Body Model (HBM)1 ScopeThis document is based on the susceptibility of components and microcircuits to damage or degradation caused by electrostatic discharge (ESD) specified on the Human Body Model (HBM). degree, and established ESD testing, evaluation and grading procedures for components and microcircuits. The purpose of this document is to establish a test method that can reproduce HBM failures and provide reliable and repeatable testing methods for different types of components. Duplicate HBMESD test results, and the test results do not change due to the test equipment. Repeatable data ensures HBMESD sensitivity Accurate classification and comparison of grades. ESD testing of semiconductor devices is based on this test method, the machine model (MM) test method (see IEC 60749-27) or IEC 60749 (All sections). Unless otherwise specified, this test method is the chosen method.2 Normative reference documentsThis document has no normative references.3 Terms and definitionsThe following terms and definitions apply to this document. 3.1 associatednon-supplypin A non-power pin (usually an I/O pin) connected to a power pin group. Note. A non-power pin is considered to be interconnected with the power pin group if one of the following conditions exists. a) Functional implementation of circuits (I/O drivers) connected to non-power supply pins (high/low impedance) requires current provided by the power supply pin group (e.g. VDDIO); b) There is a parasitic circuit between the non-power pin and the power pin group (such as an open-drain non-power pin to a nearby N-well guard ring). VCC power pin set). 3.2 Clonednon-supply(I/O)pin with the same name A group of outputs that have the same I/O elements, circuit principles, and share the same interconnected power pins (sets) including ESD power clamps. input, output or bidirectional pins. 3.3 component A basic unit capable of controlling electrical signals, such as a resistor, diode, transistor, integrated circuit, or hybrid circuit. 3.4 component failurecomponentfailure The component under test does not meet one or more static or dynamic parameters specified in the product data. ......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 4937.26-2023_English be delivered?Answer: Upon your order, we will start to translate GB/T 4937.26-2023_English as soon as possible, and keep you informed of the progress. The lead time is typically 3 ~ 5 working days. The lengthier the document the longer the lead time.Question 2: Can I share the purchased PDF of GB/T 4937.26-2023_English with my colleagues?Answer: Yes. The purchased PDF of GB/T 4937.26-2023_English will be deemed to be sold to your employer/organization who actually pays for it, including your colleagues and your employer's intranet.Question 3: Does the price include tax/VAT?Answer: Yes. Our tax invoice, downloaded/delivered in 9 seconds, includes all tax/VAT and complies with 100+ countries' tax regulations (tax exempted in 100+ countries) -- See Avoidance of Double Taxation Agreements (DTAs): List of DTAs signed between Singapore and 100+ countriesQuestion 4: Do you accept my currency other than USD?Answer: Yes. If you need your currency to be printed on the invoice, please write an email to Sales@ChineseStandard.net. In 2 working-hours, we will create a special link for you to pay in any currencies. Otherwise, follow the normal steps: Add to Cart -- Checkout -- Select your currency to pay. |
