GB/T 4937.18-2018 English PDF

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GB/T 4937.18-2018: Semiconductor devices -- Mechanical and climatic test methods -- Part 18: Ionizing radiation (total dose)
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 4937.18-2018	199	Add to Cart	3 days	Semiconductor devices -- Mechanical and climatic test methods -- Part 18: Ionizing radiation (total dose)	Valid

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Basic data

Standard ID: GB/T 4937.18-2018 (GB/T4937.18-2018)
Description (Translated English): Semiconductor devices -- Mechanical and climatic test methods -- Part 18: Ionizing radiation (total dose)
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: L40
Classification of International Standard: 31.080.01
Word Count Estimation: 10,186
Date of Issue: 2018-09-17
Date of Implementation: 2019-01-01
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration

GB/T 4937.18-2018: Semiconductor devices -- Mechanical and climatic test methods -- Part 18: Ionizing radiation (total dose)

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Semiconductor devices - Mechanical and climatic test methods - Part 18. Ionizing radiation(total dose) ICS 31.080.01 L40 National Standards of People's Republic of China Semiconductor device mechanical and climatic test methods Part 18. Ionizing radiation (total dose) Part 18. Ionizingradiation(totaldose) (IEC 60749-18.2002, IDT) Published on.2018-09-17 2019-01-01 implementation State market supervision and administration China National Standardization Administration issued

Foreword

GB/T 4937 "Mechanical and Climatic Test Methods for Semiconductor Devices" consists of the following components. --- Part 1. General; --- Part 2. Low pressure; --- Part 3. External visual inspection; --- Part 4. Strongly accelerated steady-state damp heat test (HAST); ---Part 5. Steady-state temperature and humidity bias life test; ---Part 6. High temperature storage; --- Part 7. Internal water vapor content test and other residual gas analysis; --- Part 8. Sealing; ---Part 9. Logo durability; --- Part 10. Mechanical shock; --- Part 11. rapid temperature change double tank method; --- Part 12. Sweeping vibration; --- Part 13. Salt spray; --- Part 14. Terminal strength (lead robustness); ---Part 15. Resistance to soldering of through-hole mounting devices; --- Part 16. Particle collision noise detection (PIND); ---Part 17. Neutron irradiation; ---Part 18. Ionizing radiation (total dose); ---Part 19. Chip shear strength; --- Part 20. The combined effects of moisture-resistant and soldering heat on plastic surface mount devices; ---Part 20-1. Operation, packaging, marking and transport of surface mount devices sensitive to the combined effects of moisture and soldering heat; ---Part 21. Solderability; ---Part 22. Bonding strength; --- Part 23. High temperature working life; --- Part 24. Accelerated moisture-resistant and non-biased strong accelerated stress test (HSAT); ---Part 25. Temperature cycling; --- Part 26. Electrostatic discharge (ESD) sensitivity test human body model (HBM); --- Part 27. Electrostatic discharge (ESD) sensitivity test mechanical model (MM); --- Part 28. Electrostatic discharge (ESD) sensitivity test, charged device model (CDM), device level; ---Part 29. Latch test; --- Part 30. Pre-treatment of unsealed surface mount devices prior to reliability testing; --- Part 31. Flammability of plastic encapsulated devices (internal); --- Part 32. Flammability of plastic encapsulated devices (external); ---Part 33. Accelerated moisture resistance without bias high pressure cooking; --- Part 34. Power cycling; --- Part 35. Acoustic scanning microscopy of plastic electronic components; ---Part 36. Constant acceleration; --- Part 37. Plate-level drop test method using accelerometers; --- Part 38. Soft error test methods for semiconductor memory devices; --- Part 39. Measurement of moisture diffusivity and water dissolution rate of raw materials for semiconductor components; --- Part 40. Plate-level drop test method using tension meter; --- Part 41. Reliability test methods for non-volatile memory devices; --- Part 42. Storage of temperature and humidity; --- Part 43. Guide to the reliability identification scheme for integrated circuits (ICs); --- Part 44. Test method for neutron beam irradiation single particle effect of semiconductor devices. This part is the 18th part of GB/T 4937. This part is drafted in accordance with the rules given in GB/T 1.1-2009. This section uses the translation method equivalent to IEC 60749-18.2002 "Semiconductor device mechanical and climatic test methods Part 18. Ionizing radiation (total dose). Please note that some of the contents of this document may involve patents. The issuing organization of this document is not responsible for identifying these patents. This part was proposed by the Ministry of Industry and Information Technology of the People's Republic of China. This part is under the jurisdiction of the National Semiconductor Device Standardization Technical Committee (SAC/TC78). This section was drafted. The 13th Research Institute of China Electronics Technology Group Corporation, Xinjiang Institute of Physics and Chemistry, Chinese Academy of Sciences, Northwest Nuclear Institute of Technology. The main drafters of this section. Xi Shanbin, Peng Hao, Guo Qi, Lu Wei, Chen Wei, Lin Dongsheng, He Baoping, Jin Xiaoming, Cui Bo, Chen Hairong. Semiconductor device mechanical and climatic test methods Part 18. Ionizing radiation (total dose)

1 Scope

This part of GB/T 4937 performs 60Co γ-ray source ionizing radiation on packaged semiconductor integrated circuits and semiconductor discrete devices. The total dose test provides a test procedure. This section provides an accelerated annealing test method to evaluate the effect of low dose rate ionizing radiation on the device. This annealing test for low dose rates The application of radiation or devices that exhibit time-varying effects in certain applications is important. This section applies only to steady-state irradiation and is not suitable for pulsed irradiation. This section is primarily for military or space related applications. This test may cause severe degradation of the electrical properties of the irradiated device and is therefore considered a destructive test.

2 Terms and definitions

The following terms and definitions apply to this document. 2.1 Ionizing radiation effectionizingradiationeffects A change in electrical parameters of a discrete device or integrated circuit is caused by radiation induced charges. Note. Also known as the total dose effect. 2.2 Testing in-fluxtest in irradiation Electrical testing of the device during irradiation. 2.3 Nonin-fluxtest in non-irradiation Electrical testing of the device at any time other than during the irradiation period. 2.4 Excavation test remotetests An electrical test of the device after removing the device from the irradiated position. 2.5 Time-dependent effect After irradiation, significant degradation of the electrical parameters of the device is caused by the generation or (and) annealing of the radiation induced trap charge. Note. A similar effect occurs in the device during irradiation. 2.6 Accelerated annealing test acceleratedannealingtest A method of increasing the temperature to accelerate the time-varying effect.

3 test equipment

Equipment shall include radiation sources, electrical parameter test devices, test circuit boards, cables, patch panels or switch systems, suitable dosimetry systems ......

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