GB/T 42974-2023 English PDFUS$349.00 ยท In stock  
  Delivery: <= 4 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 42974-2023: Semiconductor integrated circuits - Flash memory(FLASH) Status: Valid 
 Basic dataStandard ID: GB/T 42974-2023 (GB/T42974-2023)Description (Translated English): Semiconductor integrated circuits - Flash memory(FLASH) Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: L56 Classification of International Standard: 31.200 Word Count Estimation: 18,111 Date of Issue: 2023-09-07 Date of Implementation: 2024-01-01 Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration GB/T 42974-2023: Semiconductor integrated circuits - Flash memory(FLASH)---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.ICS 31.200 CCSL56 National Standards of People's Republic of China Semiconductor integrated circuit Flash memory (FLASH) 2024-01-01 Implementation State Administration for Market Regulation Released by the National Standardization Administration Committee ForewordThis document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents" Drafting. Please note that some content in this document may be subject to patents. The publisher of this document assumes no responsibility for identifying patents. This document is under the jurisdiction of the National Semiconductor Device Standardization Technical Committee (SAC/TC78). This document was drafted by. China Electronics Technology Standardization Institute, GigaDevice Innovation Technology Group Co., Ltd., Hefei Meiling IoT Technology Technology Co., Ltd., Cunxin Technology (Beijing) Co., Ltd., Xintianxia Technology Co., Ltd., and Sanqi (Huizhou) Electronic Technology Co., Ltd. The main drafters of this document. Luo Xiaoyu, He Wei, Xin Jun, Hu Hong, Su Zhiqiang, Li Dongqi, Han Xu, Long Dongqing, Zhang Jing, Li Baiquan, Wang Rusong, Li Jing, Li Hailong. Semiconductor integrated circuit Flash memory (FLASH)1 ScopeThis document specifies the classification, technical requirements, electrical test methods and inspection rules of flash memory (FLASH). This document applies to the design, manufacturing, procurement, and acceptance of FLASH.2 Normative reference documentsThe contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to this document. GB/T 191 Packaging, storage and transportation pictorial mark GB/T 4937.3 Mechanical and climatic test methods for semiconductor devices Part 3.External visual inspection GB/T 4937.4 Mechanical and climatic test methods for semiconductor devices Part 4.Highly accelerated steady-state hot and humid test (HAST) GB/T 4937.11 Mechanical and climatic test methods for semiconductor devices Part 11.Rapid temperature change double liquid tank method GB/T 4937.13 Mechanical and climatic test methods for semiconductor devices Part 13.Salt spray GB/T 4937.14 Mechanical and climatic test methods for semiconductor devices Part 14.Terminal strength (lead robustness) GB/T 4937.15 Mechanical and climatic test methods for semiconductor devices Part 15.Soldering heat resistance of through-hole mounted devices GB/T 4937.21 Mechanical and climatic test methods for semiconductor devices Part 21.Solderability GB/T 4937.23 Mechanical and climatic test methods for semiconductor devices Part 23.High temperature operating life GB/T 4937.26 Mechanical and climatic test methods for semiconductor devices Part 26.Electrostatic discharge (ESD) sensitivity tester Body model (HBM) GB/T 4937.27 Mechanical and climatic test methods for semiconductor devices Part 27.Electrostatic discharge (ESD) sensitivity testing machine Machine Model (MM) GB/T 9178 Integrated circuit terminology GB/T 12750 Semiconductor device integrated circuits Part 11.Specifications for semiconductor integrated circuits (excluding hybrid circuits) GB/T 17574-1998 Semiconductor devices integrated circuits Part 2.Digital integrated circuits GB/T 35003 Non-volatile memory endurance and data retention test methods GB/T 36477-2018 Semiconductor integrated circuit flash memory test method IEC 60749-9 Mechanical and climatic test methods for semiconductor devices Part 9.Marking durability (Semiconductor IEC 60749-24 Mechanical and climatic test methods for semiconductor devices Part 24.Accelerated moisture resistance - unbiased strongly accelerated stress test sistance-UnbiasedHAST) ......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 42974-2023_English be delivered?Answer: Upon your order, we will start to translate GB/T 42974-2023_English as soon as possible, and keep you informed of the progress. 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