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GB/T 42969-2023 English PDF

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GB/T 42969-2023: Displacement damage test method for components
Status: Valid
Standard IDUSDBUY PDFLead-DaysStandard Title (Description)Status
GB/T 42969-2023189 Add to Cart 3 days Displacement damage test method for components Valid

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Basic data

Standard ID: GB/T 42969-2023 (GB/T42969-2023)
Description (Translated English): Displacement damage test method for components
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: L56
Classification of International Standard: 31.200
Word Count Estimation: 10,183
Date of Issue: 2023-09-07
Date of Implementation: 2024-01-01
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration

GB/T 42969-2023: Displacement damage test method for components

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 31.200 CCSL56 National Standards of People's Republic of China Component displacement damage test method Published on 2023-09-07 2024-01-01 Implementation State Administration for Market Regulation Released by the National Standardization Administration Committee

Foreword

This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents" Drafting. Please note that some content in this document may be subject to patents. The publisher of this document assumes no responsibility for identifying patents. This document is proposed by the Ministry of Industry and Information Technology of the People's Republic of China. This document is under the jurisdiction of the National Semiconductor Device Standardization Technical Committee (SAC/TC78). This document was drafted by. China Academy of Space Technology, Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Northwest Nuclear Technology Research Institute Research Institute, the 44th Research Institute of China Electronics Technology Group Corporation, Xinjiang Institute of Physics and Chemistry Technology, Chinese Academy of Sciences, and Yangzhou University. The main drafters of this document. Luo Lei, Yu Qingkui, Tang Min, Zhu Hengjing, Zhang Hongwei, Zheng Chun, Chen Wei, Ding Lili, Wang Chaomin, Li Yudong, Wen Lin, Xue Yuxiong. Component displacement damage test method

1 Scope

This document describes test methods for displacement damage of components. This document applies to optoelectronic integrated circuits and discrete devices, such as charge coupled devices (CCD), optocouplers, image sensors (APS), Photosensitive tubes, etc., use protons and neutrons to conduct displacement damage irradiation tests. The displacement damage irradiation test of other components shall be carried out as a reference.

2 Normative reference documents

The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to this document. GB 18871 Basic standards for ionizing radiation protection and radiation source safety GB/T 19022-2003 Measurement management system measurement process and measurement equipment requirements GB/T 27418-2017 Evaluation and expression of measurement uncertainty

3 Terms and definitions

The following terms and definitions apply to this document. 3.1 Displacement damage Particles in materials cause damage to the lattice structure of the material through elastic or inelastic collisions. 3.2 The energy absorbed by a unit mass of material to produce displacement damage. Note. The displacement damage dose is often characterized by the displacement damage equivalent fluence of certain energy particles, such as the equivalent fluence of 10MeV protons and 1MeV neutrons to describe the device. Displacement damage of parts. 3.3 Non-ionizing energy lossnon-ionizingenergyloss;NIEL The energy transferred by incident particles to the crystal lattice within unit distance through non-ionizing means. Note. The common unit of non-ionization energy loss is megaelectron volts square centimeter per gram (MeV·cm2/g). 3.4 in-situ testing Without moving the device, perform electrical parameter or functional testing on the device at the irradiation position. 3.5 shift testremotetest Conduct electrical parameter or functional testing after removing the device from the irradiation position.
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