GB/T 3859.2-2013 English PDF

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GB/T 3859.2-2013: Semiconductor converters -- General requirements and line commutated converters -- Part 1-2: Application guide
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GB/T 3859.2: Historical versions

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 3859.2-2013	1639	Add to Cart	10 days	Semiconductor converters -- General requirements and line commutated converters -- Part 1-2: Application guide	Valid
GB/T 3859.2-1993	RFQ	ASK	11 days	Semiconductor convertors. Application guide	Obsolete

Similar standards

GB/T 37404   GB/T 31487.3   GB/T 3859.1   GB/T 8446.1   GB/T 8446.2   GB/T 8446.3   

Basic data

Standard ID: GB/T 3859.2-2013 (GB/T3859.2-2013)
Description (Translated English): Semiconductor converters -- General requirements and line commutated converters -- Part 1-2: Application guide
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: K46
Classification of International Standard: 29.200
Word Count Estimation: 74,769
Older Standard (superseded by this standard): GB/T 3859.2-1993
Quoted Standard: GB/T 2900.33-2004; GB/T 3859.1-2013; GB/T 3859.3-2013; GB 4208; GB/T 10236; GB/T 16935.1-2008; GB/T 17950; GB/T 18494.1
Adopted Standard: IEC/TR 60146-1-2-2011, MOD
Regulation (derived from): National Standards Bulletin 2013 No. 10
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary: This standard specifies: GB/T 3859. 1 specification covers the basic requirements, under different circumstances application guide, so in GB/T 3859. 1 prescribed to control form adapted to specific applications. For ease of use GB/T 3859. 1, gives backgro

GB/T 3859.2-2013: Semiconductor converters -- General requirements and line commutated converters -- Part 1-2: Application guide

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Semiconductor converters - General requirements and line commutated converters - Part 1-2.Application guide ICS 29.200 K46 National Standards of People's Republic of China Replace GB/T 3859.2-1993 Semiconductor converter General requirements and grid commutating converter Part 1-2.Application Guidelines (IEC /T R60146-1-2.2011,MOD) Released on.2013-07-19 Implemented on.2013-12-02 General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China Issued by China National Standardization Administration

Table of contents

Preface Ⅶ 1 Scope 1 2 Normative references 1 3 Terms and definitions 1 3.1 Terms related to converter failure 1 3.2 Terms related to transient phenomena generated by converters 3 3.3 Terms related to temperature 3 3.4 Terms related to harmonics 4 4 Performance of the converter and its system 5 4.1 Application area 5 4.1.1 Overview 5 4.1.2 Variable current systems and equipment 5 4.1.3 Power supply regulation (active power and passive power) 6 4.2 Main technical parameters 6 4.2.1 Main items that should be given 6 4.2.2 Other information 6 4.2.3 Abnormal operating conditions 7 4.3 Converter transformer and reactor 7 4.4 Calculation factor 7 4.4.1 Overview 7 4.4.2 Voltage ratio 12 4.4.3 Grid-side current factor of the converter 12 4.4.4 Current factor on the valve side of the converter 12 4.4.5 Voltage adjustment value 12 4.4.6 Magnetic circuit 13 4.4.7 Power loss factor 13 4.5 Parallel connection and series connection 13 4.5.1 Parallel connection or series connection of valve devices 13 4.5.2 Parallel or series connection of components and equipment units 13 4.6 Power factor 14 4.6.1 Overview 14 4.6.2 The text symbols used to determine the fundamental power factor 14 4.6.3 In rectifier operation and inverter operation, it is used to approximate the fundamental wave power factor cosφ1N and reactive power Q1LN. 15 4.6.4 Calculation of fundamental wave power factor cosφ1 16 4.6.5 Variable flow factor 17 4.7 DC voltage adjustment value 18 4.7.1 Overview 18 4.7.2 Inherent DC voltage adjustment value 18 4.7.3 DC voltage adjustment value caused by AC system impedance 20 4.7.4 Information that the supply and demand parties should exchange on the DC voltage adjustment value of the converter 22 4.8 Reliable operation in inverter state 22 4.9 AC voltage waveform 22 4.10 Circuit operating conditions that affect the voltage applied to the converter valve device 23 4.11 Overvoltage protection 24 4.12 Influence of environmental conditions on converter operation 25 5 Calculation of main parameters 25 5.1 Actual calculation of operating parameters 25 5.1.1 Overview 25 5.1.2 Assumptions 25 5.1.3 Preliminary calculation 26 5.1.4 Calculation of operating conditions 26 5.2 Voltage change of power supply system caused by converter load 28 5.2.1 Fundamental voltage change 28 5.2.2 Minimum R1SC value required for voltage changes 28 5.2.3 The ratio of the converter transformer 29 5.2.4 Transformer rating 30 5.3 Compensation of reactive power consumption of converter 30 5.3.1 Average reactive power consumption 30 5.3.2 Average reactive power to be compensated 30 5.3.3 Voltage fluctuation for fixed reactive power compensation 31 5.4 Supply voltage distortion 31 5.4.1 Commutation gap 31 5.4.2 Operation of multiple converters in the same power supply network 33 5.5 Harmonics generated by converter operation on the grid side 34 5.5.1 Root mean square value of grid-side current 34 5.5.2 Harmonics on the grid side (approximate method for 6-pulse converter) 34 5.5.3 Harmonic distortion and minimum R1SC requirements 36 5.5.4 Estimation of phase shift of harmonic current 37 5.5.5 Superposition of harmonic current 37 5.5.6 Peak and average harmonic spectrum 37 5.5.7 Phase shift of transformer 38 5.5.8 Sequence triggering of two 6-pulse converters 38 5.6 Power factor compensation and harmonic distortion 38 5.6.1 General 38 5.6.2 Resonant frequency 38 5.6.3 Direct parallel capacitor compensation device 39 5.6.4 Estimation of resonance frequency 39 5.6.5 Detuning reactor 40 5.6.6 Ripple control frequency (carrier frequency) 41 5.7 Harmonic content of DC voltage 41 5.8 Other considerations 42 5.8.1 Random control angle 42 5.8.2 Instability of sub-harmonics 42 5.8.3 Harmonic filter 42 5.8.4 Estimation of cable capacity 42 5.9 Calculated current value when the DC side is short-circuited 42 5.10 Selection of immunity level 43 5.10.1 Overview 43 5.10.2 Selection of immunity level 43 6 Test requirements 46 6.1 Estimation of power loss from short circuit test 46 6.1.1 Single phase connection 46 6.1.2 Multi-phase double shot connection 46 6.1.3 Multiphase single shot connection 46 6.2 Steps to estimate power loss using the short-circuit method 46 6.3 Test method 47 6.3.1 Method A1 47 6.3.2 Method B 48 6.3.3 Method C 48 6.3.4 Method D 48 6.3.5 Method E 49 6.3.6 Method A2 49 7 Calculation of the load current and junction temperature of the converter 50 7.1 Description of peak load rated current 50 7.2 Characters related to effective junction temperature 51 7.3 Determine the ability to withstand peak loads by calculating the effective junction temperature 51 7.3.1 Overview 51 7.3.2 Approximate power pulse waveform applied to a semiconductor device 52 7.3.3 Superposition method for temperature calculation 53 7.3.4 Calculation of continuous load effective junction temperature 53 7.3.5 Periodic load effective junction temperature calculation 54 7.3.6 Calculation of effective junction temperature for several typical applications 54 8 Converter operation 55 8.1 Stability 55 8.2 Static characteristics 55 8.3 Dynamic characteristics of the control system 56 8.4 Operation mode of single converter and double converter 56 8.4.1 Single converter connection 56 8.4.2 Restrictions during dual converter connection and rectification and inverter operation 57 8.5 Transition current 58 8.6 Suppression of DC Circulating Current in Dual Converter Connection 59 8.6.1 Overview 59 8.6.2 Limit trigger delay angle 59 8.6.3 Control circulation 59 8.6.4 Blocking trigger pulse 59 8.7 Working Principle of Inverter for DC Motor Control 59 8.7.1 Overview 59 8.7.2 Motor magnetic field reversal 60 8.7.3 Use the reverse switch to reverse the motor armature 60 8.7.4 Double converter connection of motor armature 61 9 Converter fault handling 61 9.1 Overview 61 9.2 Fault detection 61 9.3 Fault current protection 61 Appendix A (informative appendix) Several overvoltage protection measures 62 Fig. 1 Voltage when the converter fails 2 Figure 2 Circle diagram 16 for the approximation of the fundamental wave power factor Figure 3 When p=6, the fundamental power factor with dxN as a variable is 16 Figure 4 Fundamental power factor 17 with dxN as variable when p=12 Figure 5 When p=6 and p=12, the function dLN with dxN as the independent variable 21 Figure 6 AC voltage waveform 23 Figure 7 Circuit operating conditions that affect the voltage applied to the converter valve device 24 Figure 8 Schematic diagram of overvoltage protection measures 25 Figure 9 AC side harmonic current spectrum (p=6) 35 Figure 10 The influence of capacitor rating and AC motor load on resonance frequency and amplification factor 39 Figure 11 Harmonic content of DC voltage (p=6) 41 Figure 12 Power distribution example 44 Figure 13 Diagram 47 of Test Method A1 Figure 14 Schematic diagram of test method D 48 Figure 15 Single peak load 50 Figure 16 Repeated peak load 50 Figure 17 Approximate power pulse waveform 52 Figure 18 Calculation of effective junction temperature under continuous load 53 Figure 19 Effective Junction Temperature Calculation for Periodic Load 54 Figure 20 DC voltage waveform at different delay angles 56 Figure 21 DC voltage under different load and delay angle 57 Figure 22 Limitation of DC voltage during inverter operation 58 Figure 23 DC voltage when the DC current is lower than the transient current value 59 Figure 24 Operation sequence of converter-powered reversible DC motor 60 Figure A.1 The volt-ampere characteristics of high-voltage and high-energy MOVs 63 Figure A.2 Pulse derating curve of high-voltage and high-energy MOV 63 Figure A.3 Schematic diagram of MOV equivalent pulse derating curve (double logarithmic coordinate) 64 Figure A.4 Example of MOV connection position 65 Table 1 Electrical connection and calculation factor 8 Table 2 Characters used to determine the fundamental power factor 14 Table 3 Characters used to calculate the voltage adjustment value 19 Table 4 Rectification or inverter operating conditions 27 Table 5 Operating point 28 Table 6 Operating conditions 29 Table 7 Results of stepwise approximation 29 Table 8 Example of calculation results of active power consumption and reactive power consumption 30 Table 9 Example of notch depth for converter with special transformer 32 Table 10 Example of notch depth during operation of a converter powered by a utility transformer 33 Table 11 Example of notch depth caused by simultaneous operation of 10 converters 33 Table 12 I'L(α,μ)/IL values under different overlapping angles and retardation angles 34 Table 13 Minimum R1SC requirements for low-voltage systems 37 Table 14 Transformer phase displacement and harmonic order 38 Table 15 Approximate value of cable capacity (kvar/km) 42 Table 16 Current value of the converter when the DC side is short-circuited 43 Table 17 Calculated value 45 for the example in Figure 12 Table 18 Characters related to effective junction temperature 51 Table 19 Effective junction temperature calculation for several typical applications 55

Foreword

GB/T 3859 "Semiconductor Converter" is divided into the following parts. ---Part 1-1.Basic requirements and specifications; ---Part 1-2.Application Guidelines; ---Part 1-3.Transformers and reactors; ---Part 2.Semiconductor self-commutated converter including direct DC converter. This part is Part 1-2 of GB/T 3859. This section was drafted in accordance with the rules given in GB/T 1.1-2009. This part replaces GB/T 3859.2-1993 "Semiconductor Converter Application Guidelines". Compared with GB/T 3859.2-1993, the main technical changes in this part are as follows. ---Modified the standard name; ---Adjusted the text structure to make it consistent with IEC /T R60146-1-2.2011 as much as possible; --- Deleted the "subject content" and revised the "scope of application" (see Chapter 1, Chapter 1 of the.1993 edition); ---Adjusted the "cited documents" (see Chapter 2, Chapter 2 of the.1993 edition); ---Adjusted and revised "Terms and Definitions" (see Chapter 3, Chapter 3 of the.1993 edition); --- Deleted Chapter 4 "Converter Marking" of the.1993 edition, and the relevant content is stipulated in GB/T 3859.1-2013; ---Modified "application field of the converter", "main technical parameters of the converter", "parallel and series connection" and "environmental conditions and converter Safe operation" (see 4.1, 4.2, 4.5 and 4.12, 5.1, 5.2, 5.4 and 5.11 of the.1993 edition); ---Added "converter transformer and reactor" and "overvoltage protection" (see 4.3 and 4.11); ---Modified "commutation gap" and "harmonic content of DC voltage" (see 5.4.1 and 5.7, and 6.5.1 and 6.4 in.1993 edition); ---Added "fault current protection" (see 9.3); ---Added "several over-voltage protection measures" (see Appendix A); --- Deleted the "anti-interference performance of the trigger device" and the calculation formula for the ideal grid-side harmonic current of the converter (the 5.12 and 6.6.2.1); --- Deleted "The operation of the converter when the ambient temperature and the temperature of the cooling medium are higher than the specified value" "When the converter is used in high altitude areas" Correction of current capacity" and "temperature of the converter without exposure to operation" (1993 edition appendix A, appendix B and appendix C). This part uses the redrafting law to amend and adopt IEC /T R60146-1-2.2011 "General requirements for semiconductor converters and power grid commutation Converter Part 1-2.Application Guidelines. Compared with IEC /T R60146-1-2.2011, this part adds 4 articles (3.4, 4.11~4.12) and an appendix (Appendix A), and adjust 4.2.1 and 4.2.3.1 in IEC /T R60146-1-2.2011 to 4.2.1, 4.2.3.2 to 4.2.2.1, 4.2.3.3 adjusted to 4.2.2.2, 4.2.3.4 adjusted to 4.2.2.3, 4.2.3.5 adjusted to 4.2.2.4, 4.2.4 adjusted to 4.2.3, 5.10.1 and 5.10.2 are adjusted to 5.10.1, 5.10.3 is adjusted to 5.10.2, and 7.4 is adjusted to 4.10. The technical differences between this part and IEC /T R60146-1-2.2011 and the reasons are as follows. ---According to the actual citation in the standard provisions, some normative citation documents have been added (see Chapter 2); ---Added "terms related to harmonics" (see 3.4); ---Modified "application area" and "output-related parameters" (see 4.1 and 4.2.2.2); ---Added formulas applicable to non-uniform connection and asymmetric control (see 4.6.4.2); --- Added "overvoltage protection" and "impact of environmental conditions on converter operation" (see 4.11 and 4.12); --- In Table 10, the calculated value of the notch depth of the transformer is corrected to "0.0331", and the calculated value of the notch depth on the grid side is corrected to "0.0332". This section made the following editorial changes. Added informative Appendix A "Several Overvoltage Protection Measures". This part was proposed by China Electrical Equipment Industry Association. This part is under the jurisdiction of the National Power Electronics Standardization Technical Committee (SAC/TC60). Drafting organizations of this section. Xi'an Power Electronics Technology Research Institute, Xiamen Kehua Hengsheng Co., Ltd., Guangdong Zhicheng Champion Group Co., Ltd. Company, Baoding Wright Rectifier Co., Ltd., Suzhou Dentsu Power Electronics Co., Ltd., Qingdao Economic and Technological Development Zone Chuangtong Technology Development Co., Ltd., Wolong Electric Group Beijing Huatai Transformer Co., Ltd., Beijing Jinzi Tianzheng Intelligent Control Co., Ltd. The main drafters of this section. Lu Jianqiu, Zhou Guanyun, Wei Hongqi, Su Xianjin, Li Minying, Ma Yongbin, Sun Danfeng, Sui Xueli, He Baozhen, Yang Yanqiu, Han Yu. The previous versions of the standards replaced by this part are as follows. ---GB 3859-1983, GB/T 3859.2-1993. Semiconductor converter General requirements and grid commutating converter Part 1-2.Application Guidelines

1 Scope

This section gives guidelines for the application of the basic requirements and specifications covered by GB/T 3859.1 in different situations, so that GB/T 3859.1 The regulations are adapted to special applications in a controllable form. To facilitate the use of GB/T 3859.1, background information is given at key technical points. This section mainly covers the power grid commutating converter. As far as current standards cannot provide necessary information, this part itself is not a standard (Unless some accessories are involved).

2 Normative references

The following documents are indispensable for the application of this document. For dated reference documents, only the dated version applies to this article Pieces. For undated references, the latest version (including all amendments) applies to this document. GB/T 2900.33-2004 Electrical Terminology Power Electronic Technology (IEC 60050-551.1998, IDT) GB/T 3859.1-2013 General requirements for semiconductor converters and power grid commutated converters Part 1-1.Basic requirements specification (IEC 60146-1-1.2009, MOD) GB/T 3859.3-2013 General requirements for semiconductor converters and power grid commutated converters Part 1-3.Transformers and reactors (IEC 60146-1-3.1991, MOD) GB 4208 enclosure protection grade (IP code) (GB 4208-2008, IEC 60529.2001, IDT) GB/T 10236 Guidelines for Compatibility and Interference Protection of Semiconductor Converter and Power Supply System GB/T 16935.1-2008 Insulation coordination of equipment in low-voltage systems Part 1.Principles, requirements and tests (GB/T 16935.1- 2008, IEC 60664-1.2007, IDT) GB/T 17950 Semiconductor converter Part 6.Application guidelines for using fuses to protect semiconductor converters against overcurrent (GB/T 17950-2000, idtIEC 60146-6.1992) GB/T 18494.1 Converter Transformer Part 1.Industrial Converter Transformer (GB/T 18494.1-2001, idt IEC 61378-1.1997)

3 Terms and definitions

The following terms and definitions defined in GB/T 2900.33 and GB/T 3859.1 apply to this document. For ease of use, the following Some terms and definitions in GB/T 2900.33 and GB/T 3859.1 are repeatedly listed. 3.1 Terms related to converter failure 3.1.1 Breakthrough A failure in which the controllable valve device or the arm made of it loses the ability to block the voltage during the positive blocking period. ......

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