GB/T 36646-2018 English PDF

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GB/T 36646-2018: Equipment for preparation of nitride semiconductor materials by hydride vapor phase epitaxy
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 36646-2018	359	Add to Cart	4 days	Equipment for preparation of nitride semiconductor materials by hydride vapor phase epitaxy	Valid

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Basic data

Standard ID: GB/T 36646-2018 (GB/T36646-2018)
Description (Translated English): Equipment for preparation of nitride semiconductor materials by hydride vapor phase epitaxy
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: L95
Classification of International Standard: 31.220
Word Count Estimation: 18,125
Date of Issue: 2018-09-17
Date of Implementation: 2019-01-01
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration

GB/T 36646-2018: Equipment for preparation of nitride semiconductor materials by hydride vapor phase epitaxy

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Equipment for preparation of nitride semiconductor materials by hydride vapor phase epitaxy ICS 31.220 L95 National Standards of People's Republic of China For the preparation of nitride semiconductor materials Hydride vapor phase epitaxy equipment Published on.2018-09-17 2019-01-01 implementation State market supervision and administration China National Standardization Administration issued

Content

Foreword III 1 Scope 1 2 Normative references 1 3 Terms and Definitions 1 4 Product Classification and Marking 2 4.1 Classification 2 4.2 Model Mark 2 5 Working conditions 3 5.1 Power supply 3 5.2 Ambient temperature 3 5.3 Relative humidity 3 5.4 Atmospheric pressure 3 5.5 Cleanroom Level 4 5.6 Cooling water 4 5.7 Power gas 4 6 Requirements 4 6.1 Pressure rise rate 4 6.2 Gas Transport System 4 6.3 Electrical System 4 6.4 Control Software 4 6.5 Machine performance 5 6.6 Security 5 7 Detection method 6 7.1 Pressure rise rate test 6 7.2 Gas transport system testing 6 7.3 Electrical system testing 6 7.4 Control Software Detection 7 7.5 Machine performance test 7 7.6 Security Protection Test 9 8 Inspection rules 9 8.1 Inspection Category 9 8.2 Type test 9 8.3 Factory inspection 10 8.4 Decision Rule 10 9 Marking, packaging, transport and storage 10 9.1 Mark 10 9.2 Packing 11 9.3 Transportation 11 9.4 Storage 11 Appendix A (Normative) Nitride Epitaxial Material Thickness Measurement 12

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. Please note that some of the contents of this document may involve patents. The issuing organization of this document is not responsible for identifying these patents. This standard is proposed and managed by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203). This standard was drafted. Dongguan Zhongjiao Semiconductor Technology Co., Ltd., China Electronics Technology Standardization Institute. The main drafters of this standard. Liu Peng, Sun Yongjian, Ding Xiaomin, Feng Yabin, Wang Jianhui. For the preparation of nitride semiconductor materials Hydride vapor phase epitaxy equipment

1 Scope

This standard specifies the product classification for the preparation of hydride vapor phase epitaxy equipment for nitride semiconductor materials (hereinafter referred to as "HVPE equipment"). Classes and markings, working conditions, requirements, testing methods, inspection rules, marking, packaging, transportation and storage. This standard applies to the preparation of HVPE equipment with a diameter of 50.8mm ~ 152.4mm nitride semiconductor materials.

2 Normative references

The following documents are indispensable for the application of this document. For dated references, only dated versions apply to this article. Pieces. For undated references, the latest edition (including all amendments) applies to this document. GB/T 191-2008 packaging storage and transportation icon GB/T 3768-2017 Acoustic sound pressure method for the determination of noise source sound power level and sound energy level using the envelope measurement surface above the reflective surface Simple method GB/T 5080.7-1986 Equipment reliability test Verification test for failure rate and mean time between failures under the assumption of constant failure rate Inspection plan GB 5226.1-2008 Mechanical electrical safety machinery and electrical equipment - Part 1. General technical conditions GB/T 6388-1986 Transport packaging receipt and delivery mark GB/T 14264-2009 Semiconductor material terminology GB 50073-2013 clean factory design specification GB/T 50087-2013 Industrial Enterprise Noise Control Design Specification GB 50646-2011 Special Gas System Engineering Technical Specification SJ/T 37-1996 Modeling and naming method for special equipment for electronic industry

3 Terms and definitions

The following terms and definitions as defined in GB/T 14264-2009 and GB 50646-2011 apply to this document. 3.1 Hydride vapor phase epitaxy hydridevaporphaseepitaxy Among the chemical components required for epitaxial growth, at least one vapor phase epitaxy of a hydride is employed. 3.2 Reaction chamber reactionchamber A chamber for performing an epitaxial process on the substrate sheet. 3.3 Load capacity The maximum number of sheets of a substrate having a diameter of 50.8 mm can be arranged in a single layer on the carrier tray in the reaction chamber. Note. The diameter of the 2 吋 substrate is 50.8 mm. ......

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