GB/T 34504-2017 English PDF

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GB/T 34504-2017: Measurement method for surface metal contamination on sapphire polished substrate wafer
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 34504-2017	279	Add to Cart	3 days	Measurement method for surface metal contamination on sapphire polished substrate wafer	Valid

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Basic data

Standard ID: GB/T 34504-2017 (GB/T34504-2017)
Description (Translated English): Measurement method for surface metal contamination on sapphire polished substrate wafer
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H17
Classification of International Standard: 77.040
Word Count Estimation: 14,152
Date of Issue: 2017-10-14
Date of Implementation: 2018-05-01
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China

GB/T 34504-2017: Measurement method for surface metal contamination on sapphire polished substrate wafer

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Measurement method for surface metal contamination on sapphire polished substrate wafer ICS 77.040 H17 National Standards of People's Republic of China Sapphire polished substrate surface Residual metal elements measurement methods 2017-10-14 Published 2018-05-01 implementation General Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China China National Standardization Administration released

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standards Technical Committee Sub-Technical Committee on Materials (SAC/TC203/SC2) co-sponsored and centralized. This standard was drafted unit. Tiantong Holdings Co., Ltd.. The main drafters of this standard. Conson, Song Yan rock, Shao Feng, Shen Qu Huan, Yu Zhenjie. Sapphire polished substrate surface Residual metal elements measurement methods

1 Scope

This standard specifies the sapphire polishing substrate surface depth of 5nm residual metal elements total reflection X-ray fluorescence spectrometry Test method. This standard applies to sapphire polishing substrate surface residual, in the periodic table 11 (Na) ~ 92 (U) (remove aluminum and oxygen), And the areal density is between 109 atoms/cm2 and 1015 atoms/cm2. Other uses Sapphire polishing surface residual The measurement of remaining metal elements can be performed with reference to this standard.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version applies to this article Pieces. For undated references, the latest edition (including all amendments) applies to this document. GB/T 8979-2008 Pure nitrogen, high purity nitrogen and ultra pure nitrogen GB/T 14264 semiconductor materials terminology Design specifications for clean rooms 3 Terms, definitions and abbreviations GB/T 14264 defined and the following terms, definitions and abbreviations apply to this document. 3.1 Terms and definitions 3.1.1 Grazing angle glancingangle Total reflection X-ray fluorescence (TXRF) test method of X-ray incidence angle. 3.1.2 Angle scan anglescan Measurement of emitted fluorescent signal as a function of grazing angle. 3.1.3 Critical angle criticalangle Can produce the maximum angle of total reflection. When the grazing angle is less than this angle, total reflection of the incident X-ray occurs on the measured surface. 3.2 Abbreviations TXRF total reflection X-ray fluorescence spectrometry (totalreflectionX-rayfluorescence)

4 method principle

4.1 TXRF excitation Excitation of the sample stage by a primary X-ray grazing angle of incidence of less than 0.1 °. The incident X-ray passes Total reflection occurs on the surface of the sample, and the excited X-ray fluorescence is detected by a Si (Li) detector and then determined by a spectrometer Quantitative analysis. The X-ray loss wave exponentially declines through the sample surface. The decay intensity depends on the surface roughness of the sample and the total electron density. ......

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