GB/T 32651-2016 English PDF

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GB/T 32651-2016: Test method for measuring trace elements in photovoltaic-grade silicon by high-mass resolution glow discharge mass spectrometry
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 32651-2016	239	Add to Cart	3 days	Test method for measuring trace elements in photovoltaic-grade silicon by high-mass resolution glow discharge mass spectrometry	Valid

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Basic data

Standard ID: GB/T 32651-2016 (GB/T32651-2016)
Description (Translated English): Test method for measuring trace elements in photovoltaic-grade silicon by high-mass resolution glow discharge mass spectrometry
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H82
Classification of International Standard: 29.045
Word Count Estimation: 12,152
Date of Issue: 2016-04-25
Date of Implementation: 2016-11-01
Quoted Standard: GB/T 4842; GB/T 6682-2008
Regulation (derived from): National Standard Announcement No
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary: This standard specifies the use of high-quality resolution glow discharge mass spectrometry in the determination of trace elements in solar grade silicon method. This standard is applicable to the determination of trace elements in solar grade silicon materials, including iron (Fe), chromium (Cr), nickel (Ni), copper (Cu), zinc (Zn), boron (B) (Ca), sodium (Na), magnesium (Mg), aluminum (Al), arsenic (As), scandium (Sc), titanium, vanadium, manganese, , Gallium (Ga) and other elements of the measurement range of 5 ��g/kg ~ 50 mg/kg. The method is applicable to the analysis of a variety of physical forms and the addition of silicon material of any kind and concentration dopant, such as polysilicon powder, particles, blocks, ingots, sheets and monocrystalline silicon rods, blocks, sheets and the like.

GB/T 32651-2016: Test method for measuring trace elements in photovoltaic-grade silicon by high-mass resolution glow discharge mass spectrometry

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test method for measuring trace elements in photovoltaic-grade silicon by high-mass resolution glow discharge mass spectrometry ICS 29.045 H82 National Standards of People's Republic of China Using high-quality resolution glow discharge Mass spectrometry is measured in solar grade silicon Trace elements of the test method 2016-04-25 released 2016-11-01 implementation General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China China National Standardization Management Committee released

Foreword

This standard is drafted in accordance with the rules given in GB/T 1.1-2009. Please note that some of the contents of this document may involve patents. The issuer of this document does not assume responsibility for the identification of these patents. This standard is nationalized by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203). The main drafting unit of this standard. National Solar Photovoltaic Product Quality Supervision and Inspection Center (Wuxi City Product Quality Supervision and Inspection Center), Jiang Suzhong to Silicon Technology Development Co., Ltd., the national deep processing of silicon material quality supervision and inspection center, Jiangxi LDK LDK solar high-tech Technology Co., Ltd., China Electronic Technology Standardization Research Institute. The main drafters of this standard. He Li, Wu Jianguo, Wang Qin, Zhou Ying, Liu Xiaoxia, Lu Wenfeng, Chen Jin, Feng Lijuan, Li Jiande, Huang Xuewen, Sun Shaowu, Feng Yabin, Pei Huichuan. Using high-quality resolution glow discharge Mass spectrometry is measured in solar grade silicon Trace elements of the test method

1 Scope

This standard specifies the use of high-quality resolution glow discharge mass spectrometry to measure trace elements in solar grade silicon. This standard is suitable for the determination of trace elements in solar grade silicon materials, including iron (Fe), chromium (Cr), nickel (Ni), copper (Cu), zinc (Zn) Boron (B), phosphorus (P), calcium (Ca), sodium (Na), magnesium (Mg), aluminum (Al), arsenic (As), scandium (Sc), titanium (Ti) Manganese (Mn), cobalt (Co), gallium (Ga) and other elements of the determination of the range of 5μg/kg ~ 50mg/kg. This method is suitable for analyzing a variety of physical forms as well as adding any kind And concentration dopants, such as polysilicon powders, granules, blocks, ingots, sheets and monocrystalline silicon rods, blocks, sheets, and the like.

2 normative reference documents

The following documents are indispensable for the application of this document. For dated references, only the dated edition applies to this article Pieces. For undated references, the latest edition (including all modifications) applies to this document. GB/T 4842 argon Analysis of laboratory water specifications and test methods GB/T 6682-2008

3 terms and definitions

The following terms and definitions apply to this document. 3.1 High quality resolution highmassresolution Greater than 3500 mass resolution. 3.2 Photovoltaic silicon raw materials or solar grade silicon PVSifeedstockorsolargradesilicon Features to meet the requirements of the production of crystalline silicon solar cell requirements of silicon solid materials. 3.3 Standard sample referencematerial Materials having one or more elements that are sufficiently uniform and stable to the specified properties have been determined to conform to the intended use of the measurement process. 3.4 Sample specimen From the standard sample or test sample cut down, the size of the appropriate load to the high-resolution glow discharge mass spectrometer ion source into the The test object of the line analysis. ......

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