GB/T 30866-2014 English PDF

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GB/T 30866-2014: Test method for measuring diameter of monocrystalline silicon carbide wafers
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 30866-2014	149	Add to Cart	2 days	Test method for measuring diameter of monocrystalline silicon carbide wafers	Valid

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Basic data

Standard ID: GB/T 30866-2014 (GB/T30866-2014)
Description (Translated English): Test method for measuring diameter of monocrystalline silicon carbide wafers
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H83
Classification of International Standard: 29.045
Word Count Estimation: 5,520
Date of Issue: 7/24/2014
Date of Implementation: 2/1/2015
Regulation (derived from): National Standards Bulletin No. 19, 2014
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary: This standard specifies the method for measuring a micrometer silicon carbide single crystal diameter. This standard applies to the measurement of silicon carbide single crystal diameter.

GB/T 30866-2014: Test method for measuring diameter of monocrystalline silicon carbide wafers

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test method for measuring diameter of monocrystalline silicon carbide wafers ICS 29.045 H83 National Standards of People's Republic of China SiC single wafer diameter test methods Issued on. 2014-07-24 2015-02-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

This standard was drafted in accordance with GB/T 1.1-2009 given rules. The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and materials Technical Committee (SAC/TC 203/SC2) jointly proposed and managed. This standard was drafted. China Electronics Technology Group Corporation forty-sixth Research Institute, China Electronics Standardization Institute. The main drafters of this standard. ARCHIVES INNER Xian Lin, Hao Jian Min, He Xiukun, Liu Yun, Fengya Bin, Peikuai Chuan. SiC single wafer diameter test methods

1 Scope

This standard specifies the method for measuring a micrometer silicon carbide single crystal diameter. This standard applies to the measurement of silicon carbide single crystal diameter.

2 Method summary

Avoid single wafer of silicon carbide main and auxiliary reference plane, select the three measurement positions (Figure 1), with an outside diameter direction micrometer carbon Three pieces of silicon single crystal diameter, calculate the average diameter and diameter deviation.

1 a schematic diagram of a diameter measuring position

3 Equipment

Indexing value of 0.02mm micrometer diameter or other instrument equivalent accuracy.

4 sample preparation

SiC single crystal should be clean, dry and edges shall be smooth and flat.

5 Test Environment

5.1 Temperature. 18 ℃ ~ 28 ℃. 5.2 Relative humidity should not exceed 75%.

6 Test Procedure

6.1 micrometer diameter correction zero. ......

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