GB/T 29852-2013 English PDF

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GB/T 29852-2013: Test method for measuring phosphorus, arsenic and antimony in silicon materials used for photovoltaic applications by secondary ion mass spectrometry
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 29852-2013	169	Add to Cart	3 days	Test method for measuring phosphorus, arsenic and antimony in silicon materials used for photovoltaic applications by secondary ion mass spectrometry	Valid

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Basic data

Standard ID: GB/T 29852-2013 (GB/T29852-2013)
Description (Translated English): Test method for measuring phosphorus, arsenic and antimony in silicon materials used for photovoltaic applications by secondary ion mass spectrometry
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H82
Classification of International Standard: 29.045
Word Count Estimation: 7,720
Regulation (derived from): National Standards Bulletin No. 22 of 2013
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary: This standard specifies: Determination of photovoltaic cells with secondary ion mass spectrometry (SIMS) silicon materials phosphorus, arsenic and antimony content Method, This standard applies to: photovoltaic cells donor impurity phosphorus, arsenic and

GB/T 29852-2013: Test method for measuring phosphorus, arsenic and antimony in silicon materials used for photovoltaic applications by secondary ion mass spectrometry

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test method for measuring phosphorus, arsenic and antimony in silicon materials used for photovoltaic applications by secondary ion mass spectrometry ICS 29.045 H82 National Standards of People's Republic of China Solar cell silicon material P, As, Sb donor impurity Secondary ion mass spectrometry method for content Testmethodformeasuringphosphorus, arsenicandantimonyinsiliconmaterials Issued on. 2013-11-12 2014-04-15 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

This standard was drafted in accordance with GB/T 1.1-2009 given rules. Please note that some of the content of this document may involve patents. Release mechanism of the present document does not assume responsibility for the identification of these patents. The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and focal points. This standard was drafted. the information industry materials for Quality Supervision and Inspection Center, China Electronics Standardization Institute, National Electronic Power With auxiliary materials for Quality Supervision and Inspection Center, Tianjin Central European Semiconductor Materials Technology Co., Ltd. The main drafters of this standard. Manong agriculture, Heyou Qin, Wang Xue, He Xiukun, Pingya Bin, Peikuai Chuan, Zhang Xue-nan. Solar cell silicon material P, As, Sb donor impurity Secondary ion mass spectrometry method for content

1 Scope

This standard specifies the method for the determination of photovoltaic cells with secondary ion mass spectrometry (SIMS) with silicon phosphorus, arsenic and antimony content. This standard applies to solar cell silicon material donor impurity phosphorus, arsenic and antimony content quantitative analysis in which phosphorus, arsenic and antimony concentrations were Greater than 1 × 1014atoms/cm3.

2 principle of the method

Under high vacuum, a cesium ion source generating primary ions, the accelerated, purified and focused, bombarding the sample surface, a variety of sputtered particle Son, in which ions (ie, secondary ion) leads, by a different charge to mass ratio mass spectrometer to separate ions, record and calculate the sample of phosphorus, arsenic, Secondary ion intensity ratio of antimony and silicon (31P -)/(30Si -), (75As -)/(30Si -), (121Sb -)/(30Si-), and then by using the relative sensitivity Child quantified.

3 disturbances

3.1 sample surface adsorption of phosphorus, arsenic, antimony interfere with the sample of phosphorus, arsenic, antimony measurements. 3.2 from SIMS instrument sample chamber adsorbed to the surface of the sample can interfere with boron and aluminum samples of phosphorus, arsenic, antimony measurements. 3.3 in the sample holder window range of the sample surface should be flat, in order to ensure that each sample is moved to the analysis position, its surface with an ion collector The inclination of the optical system unchanged, otherwise the measurement accuracy and precision will be reduced. 3.4 Measuring accuracy and precision with the sample surface roughness increases significantly reduced, the surface of the sample by chemical mechanical polishing Light be eliminated. 3.5 Standard samples of phosphorus, arsenic, antimony uneven distribution will affect the measurement accuracy. 3.6 Standard samples of phosphorus, arsenic, antimony nominal concentration variation causes a measurement bias. 3.7 due to different instruments or different instruments in the same state, the detection limit may be different. 3.8 Because the secondary ion mass spectrometry is a destructive test, it should be sampled and the samples taken shall be representative of the nature of the batch of silicon materials. This standard does not establish uniform methods of sampling, as most appropriate sampling plan based on different samples circumstances are different. In order to achieve secondary Conference purpose, the sampling plan should be tested before the test to get the two sides recognized.

4 instruments and equipment

4.1 magnetic sector SIMS Instruments need to equip a cesium ion source, capable of detecting the negative ion secondary electron multiplier and a Faraday cup detector, mass resolution better than 4000. 4.2 cryogenic liquid nitrogen or liquid helium cooling plates If the vacuum analysis chamber is greater than 1.3 × 10-6Pa, application of liquid nitrogen or liquid helium cryogenic cooling plate surround analysis chamber sample holder. If the vacuum analysis chamber is less than 1.3 × 10-6Pa, the cooling is not required. ......

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