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GB/T 26070-2010 English PDF

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GB/T 26070-2010: Characterization of subsurface damage in polished compound semiconductor wafers by reflectance difference spectroscopy method
Status: Valid
Standard IDUSDBUY PDFLead-DaysStandard Title (Description)Status
GB/T 26070-2010329 Add to Cart 3 days Characterization of subsurface damage in polished compound semiconductor wafers by reflectance difference spectroscopy method Valid

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Basic data

Standard ID: GB/T 26070-2010 (GB/T26070-2010)
Description (Translated English): Characterization of subsurface damage in polished compound semiconductor wafers by reflectance difference spectroscopy method
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H17
Classification of International Standard: 77.040.99
Word Count Estimation: 14,178
Date of Issue: 1/10/2011
Date of Implementation: 10/1/2011
Regulation (derived from): Announcement of Newly Approved National Standards 2011 No. (No. 166 overall) 1
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary: This Standard specifies III-V compound semiconductor test methods polished crystal subsurface damage. This Standard is applicable to GaAs, InP (GaP, GaSb may be reference) and other measurements of subsurface damage of a compound semiconductor single crystal polished.

GB/T 26070-2010: Characterization of subsurface damage in polished compound semiconductor wafers by reflectance difference spectroscopy method


---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Characterization of subsurface damage in poloshed compound semiconductor wafers by reflectance difference spectoracopy method ICS 77.040.99 H17 National Standards of People's Republic of China The semiconductor wafer polishing compound subsurface Test methods for reflectance differential spectra of injury Issued on. 2011-01-10 2011-10-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

The standard equipment by the National Standardization Technical Committee and the Technical Committee material of the semiconductor material (SAC/TC203/SC2) centralized. This standard is drafted by the Institute of Semiconductors. The main drafters of this standard. Chen Yonghai, Zhao Youwen, mention Liu Wang, Wang Yuanli. The semiconductor wafer polishing compound subsurface Test methods for reflectance differential spectra of injury

1 Scope

1.1 standard specifies the test method Ⅲ-Ⅴ compound semiconductor single crystal polished subsurface damage. 1.2 This standard applies to GaAs, InP (GaP, GaSb can be reference) and other compound semiconductor single crystal polished subsurface damage measuring.

2 Definitions

2.1 Terms and Definitions The following terms and definitions apply to this document. 2.1.1 Subsurface damage subsurfacedamage After the semiconductor crystal by cutting, grinding, polishing and other processing techniques, within a distance of about polished surface of the sub-micron range, part of the integrity of the crystal will Damaged, there is a very thin (thickness is generally several tens to hundreds of nanometers) damage layer, in which there is a lot of dislocations, lattice distortion, etc. missing trap. The damaged layer called sub-surface damage layer. 2.1.2 Photoelastic effect photoelasticeffect When there is stress or strain elastic medium, the dielectric constant or the refractive index of the medium change. Change the dielectric constant or refractive index Variable closely related strain and applied stress. Anisotropic stress or strain will cause the dielectric function or refractive index anisotropy appears, guide Organic crystal material appears optical anisotropy (birefringence, dichroism). 2.1.3 Optically anisotropic opticalanisotropy When the optical properties of the material varies with the direction of propagation and the polarization state of the light, this material is said to have optical anisotropy. 2.1.4 Linearly polarized light linearlypolarizedlight Vibration of the electric vector is always in a fixed plane of linearly polarized light is called. 2.1.5 Reflection difference spectrum reflectancedifferencespectroscopy, RDS Measured near normal incidence conditions, the relative difference between the two orthogonal polarization of the incident light beam reflection coefficient with wavelength change is reflected poor Spectrum points. 2.2 Symbol The following symbols apply to this document. 2.2.1 Δr/r The test crystalline material relative differences in two axis directions of the optical anisotropy of the reflection coefficient, i.e. differential reflection signal. 2.2.2 Reflectance measured crystal material.
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