GB/T 11093-2007 English PDFUS$369.00 · In stock
Delivery: <= 3 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 11093-2007: Liquid encapsulated Czochralski-grown gallium arsenide single crystals and as-cut slices Status: Valid GB/T 11093: Historical versions
Basic dataStandard ID: GB/T 11093-2007 (GB/T11093-2007)Description (Translated English): Liquid encapsulated Czochralski-grown gallium arsenide single crystals and as-cut slices Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: H83 Classification of International Standard: 29.045 Word Count Estimation: 14,188 Date of Issue: 2007-09-11 Date of Implementation: 2008-02-01 Older Standard (superseded by this standard): GB/T 11093-1989 Quoted Standard: GB/T 1555; GB/T 2828.1; GB/T 4326; GB/T 8760; GB/T 13387; GB/T 14264; GB/T 14844; GJB 1927 Regulation (derived from): China National Standard Approval Announcement2007 No.11 (Total No.111) Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China Summary: This standard specifies the liquid encapsulated Czochralski GaAs single crystal and cut sheet requirements, test methods, inspection rules and signs, packaging, transport storage and so on. This standard applies to lec GaAs single crystal prepared by its cut slices. Products for the production of microwave devices, integrated circuits, optoelectronic devices, sensing element and an infrared window materials and other components. GB/T 11093-2007: Liquid encapsulated Czochralski-grown gallium arsenide single crystals and as-cut slices---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order. Liquid encapaulated czochralski-grouwn gallium arsenide single crystals and as-cut slices ICS 29.045 H83 National Standards of People's Republic of China Replacing GB/T 11093-1989 Liquid encapsulated Czochralski GaAs single crystal and cut sheet Posted 2007-09-11 2008-02-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released ForewordThis standard is GB/T 11093-1989 "liquid encapsulated Czochralski GaAs single crystal and cut film" amendments. This standard compared with GB/T 11093-1989, the main changes are as follows. --- Monocrystalline and cutting sheet grades according to GB/T 14844 "semiconductor material grades representation" has been revised; --- Increased by 76.2mm (3in), 100mm, 125mm and 150mm specifications of the product; --- Increasing the incorporation of impurity elements such as carbon products; --- Removed 40mm specifications of the products; --- Canceled by the dislocation density of the product classification. From the date of implementation of this standard, instead of the GB/T 11093-1989. The standard proposed by China Nonferrous Metals Industry Association. This standard by the National Standardization Technical Committee materials and equipment at the Technical Committee of semiconductor material. This standard was drafted. Beijing Nonferrous Metal Research Institute. The main drafters. Zhang Fengyi, Zhengan Sheng. This standard replaces the standards previously issued as follows. --- GB/T 11093-1989. Liquid encapsulated Czochralski GaAs single crystal and cut sheet1 ScopeThis standard specifies the liquid encapsulated Czochralski GaAs single crystal and cut sheet requirements, test methods, inspection rules and signs, packaging, transport vessel Memory and so on. This standard applies to liquid seal Czochralski GaAs single crystal prepared by cutting and sheet. Products for the production of microwave devices, integrated circuits, electrical light Member, and an infrared sensor window materials and other components.2 Normative referencesThe following documents contain provisions which, through reference in this standard and become the standard terms. For dated references, subsequent Amendments (not including errata content) or revisions do not apply to this standard, however, encourage the parties to the agreement are based on research Whether the latest versions of these documents. For undated reference documents, the latest versions apply to this standard. GB/T 1555 to the measurement method of a semiconductor single crystal GB/T 2828.1 Sampling procedures for inspection - Part 1. by acceptance quality limit (AQL) retrieval batch inspection sampling plan GB/T 4326 extrinsic semiconductor single crystals Hall mobility and Hall coefficient measurements GB/T 8760 GaAs single crystal dislocation density measurement GB/T 13387 Electronic Materials wafer reference surface length measurement method GB/T 14264 semiconductor material terms GB/T 14844 semiconductor material grades that way GJB1927 GaAs single crystal material test methods3 Requirements3.1 Categories Products by type conductivity and resistivity type into a semi-insulating (SI type), low resistance conductivity type (n-type and p-type). Grade 3.2 3.2.1 grade is expressed as a single crystal LEC-GaAs- □ () - < > GaAs single crystal growth method represents a liquid encapsulated Czochralski GaAs material of the formula Conductivity type, the elements within the brackets is the symbol for the dopant, if there are two or more dopants, Separated by "+" connection crystal orientation represented by Miller indices If not emphasize producing single crystal doped or not, the corresponding grades portion may be omitted. Example. LEC-GaAs-SI- < 100> indicates liquid encapsulated Czochralski semi-insulating < 100> direction of the GaAs single crystal; LEC-GaAs-n (Te) - < 100> indicates liquid encapsulated Czochralski doped tellurium (Te) n-type < 100> direction of the GaAs single crystal; LEC-GaAs-SI (Cr + O) - < 100> indicates liquid encapsulated Czochralski chromium (Cr) oxygen (O) double-doped semi-insulating < 100> direction of the GaAs single crystal. ......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 11093-2007_English be delivered?Answer: Upon your order, we will start to translate GB/T 11093-2007_English as soon as possible, and keep you informed of the progress. The lead time is typically 1 ~ 3 working days. The lengthier the document the longer the lead time.Question 2: Can I share the purchased PDF of GB/T 11093-2007_English with my colleagues?Answer: Yes. 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Unless special scenarios such as technical constraints or academic study, you should always prioritize to purchase the latest version GB/T 11093-2007 even if the enforcement date is in future. Complying with the latest version means that, by default, it also complies with all the earlier versions, technically. |
