GB 5820.2-1986 English PDF
US$519.00 ยท In stock
Delivery: <= 4 days. True-PDF full-copy in English will be manually translated and delivered via email.
GB 5820.2-1986: Detail specification for electronic components--Bipolar transistors for ambient-rated low and high frequency amplification types 3DG111B, 3DG111C, 3DG111E, 3DG111F
Status: Obsolete
Delivery: <= 4 days. True-PDF full-copy in English will be manually translated and delivered via email.
GB 5820.2-1986: Detail specification for electronic components--Bipolar transistors for ambient-rated low and high frequency amplification types 3DG111B, 3DG111C, 3DG111E, 3DG111F
Status: Obsolete
| Standard ID | USD | BUY PDF | Lead-Days | Standard Title (Description) | Status |
| GB 5820.2-1986 | 519 | Add to Cart | 4 days | Detail specification for electronic components--Bipolar transistors for ambient-rated low and high frequency amplification types 3DG111B, 3DG111C, 3DG111E, 3DG111F | Obsolete |
Basic data
Standard ID: GB 5820.2-1986 (GB5820.2-1986)Description (Translated English): Detail specification for electronic components--Bipolar transistors for ambient-rated low and high frequency amplification types 3DG111B, 3DG111C, 3DG111E, 3DG111F
Sector / Industry: National Standard
Classification of Chinese Standard: L21
Word Count Estimation: 13,194
Date of Issue: 1/24/1986
Date of Implementation: 9/1/1986
Adopted Standard: IEC 47 (CO)950, NEQ