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GB/T 15862-2012 English PDF

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GB/T 15862-2012: General specification of ion implantation equipment
Status: Valid

GB/T 15862: Evolution and historical versions

Standard IDContents [version]USDSTEP2[PDF] delivered inStandard Title (Description)StatusPDF
GB/T 15862-2012English279 Add to Cart 3 days [Need to translate] General specification of ion implantation equipment Valid GB/T 15862-2012
GB/T 15862-1995English399 Add to Cart 3 days [Need to translate] Generic specification for ion implantation equipment Obsolete GB/T 15862-1995

PDF similar to GB/T 15862-2012


Standard similar to GB/T 15862-2012

SJ/T 11795   GB/T 5838.45   GB/T 11446.9   GB/T 43725   GB/T 37947.4   GB/T 15861   

Basic data

Standard ID GB/T 15862-2012 (GB/T15862-2012)
Description (Translated English) General specification of ion implantation equipment
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard L97
Classification of International Standard 31.550
Word Count Estimation 12,196
Older Standard (superseded by this standard) GB/T 15862-1995
Quoted Standard GB/T 191; GB/T 4857.7-2005; GB/T 5080.7-1986; GB/T 13384-1992; GB/T 6388-1986; GB 18209.1; SJ/T 142; SJ/T 1276; SJ/T 10674
Regulation (derived from) National Standards Bulletin No. 28 of 2012
Issuing agency(ies) General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary This standard specifies the terms of the ion implanter, product classification, technical requirements, testing, inspection rules and signs, packaging, transportation and storage. This standard applies to electrical energy ion implantation semiconductor p

GB/T 15862-2012: General specification of ion implantation equipment

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
General specification of ion implantation equipment ICS 31-550 L97 National Standards of People's Republic of China Replacing GB/T 15862-1995 General specification for ion implanter Issued on. 2012-11-05 2013-02-15 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

This standard was drafted in accordance with GB/T 1.1-2009 given rules. This standard replaces GB/T 15862-1995 "ion implanter general technical conditions." This standard and GB/T 15862-1995 compared to the main changes are as follows. --- GB n193-1983 replaced by the GB/T 13384-1992; --- Increasing the term "implant angle" (see 3.6), "the largest wafer transfer efficiency" (see 3.7), and do the performance and test methods Appropriate requirements (see 6.4.6); --- Ambient temperature was 23 ℃ ± 2 ℃; relative humidity prescribed range of 30% to 50% (see 5.1.3); --- Safety requirements in terms of increasing the "warning signs" (see 6.3.1); --- Removed Tables 3 and 4; --- Uniformity measurement increases heat wave conditions and methods of measuring probe (see 6.4.4.1b)); --- Repeatable measurements increased inter-assay reproducibility of the measurement method (see 6.4.5.2); --- Inspection rules remove routine test items. The standard proposed by the Ministry of Industry and Information Technology of the People's Republic of China. The standard by the China Electronics Standardization Institute. This standard was drafted. China Electronics Technology Group Corporation 48th Research Institute. The main drafters of this standard. Guo Jianhui, Peng Libo, Luo Hong Yang. This standard replaces the standards previously issued as follows. --- GB/T 15862-1995. General specification for ion implanter

1 Scope

This standard specifies the terms of the ion implanter, product classifications, technical requirements, testing, inspection rules and signs, packaging, transportation and storage. This standard applies to semiconductor process electric energy ion implanter. Other ion implanter may also refer to use.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein Member. For undated references, the latest edition (including any amendments) applies to this document. GB/T 191 Packaging - Pictorial signs GB/T 4857.7-2005 Basic tests for transport packages - Part 7. fixed-frequency sinusoidal vibration test method GB/T 5080.7-1986 Equipment reliability testing efficiency constant failure rate assumption under the MTBF of the verification test Inspection program GB/T 6388-1986 transport package shipping mark GB/T 13384-1992 mechanical and electrical products packaging General technical conditions GB 18209.1 Safety of machinery - Indication, marking and actuation - Part 1. Requirements for visual, auditory and tactile signals SJ/T 142 General specification for electronic industrial equipment SJ/T 1276 metal plating and chemical treatment layer quality inspection technical requirements SJ/T 10674 General technical paint coating

3 Terms

The following terms and definitions apply to this document. 3.1 Beam energy beamenergy Reach the target on the ion kinetic energy. Note. The unit of electron volts (eV). 3.2 The target beam beamcurrentontarget Ion beam charge amount per unit time received by the target. Note. amperes (A). 3.3 Uniformity uniformity Characterization of ion implantation inhomogeneous dose level. Relative standard deviation. 3.4 Repeatability repeatability Inter Token (or to batch) ion implantation dose level will not be repeated under the same conditions, with the relative standard deviation.

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