|
Std ID |
Description (Standard Title) |
|
SJ/T 10964-1996
|
Detailed specifications for electronic components - 3DD401 silicon NPN case-rated transistors for low frequency amplification (Applicable for certification)
|
|
SJ/T 10965-1996
|
Detailed specifications for electronic components - 3CD546 silicon NPN case-rated transistors for low frequency amplification (Applicable for certification)
|
|
SJ/T 10966-1996
|
Detailed specifications for electronic components - 3DD100C silicon NPN case-rated transistors for low frequency amplification (Applicable for certification)
|
|
SJ/T 10967-1996
|
Detailed specifications for electronic components - 3DD203 silicon NPN case-rated transistors for low frequency amplification (Applicable for certification)
|
|
SJ/T 10968-1996
|
Detailed specifications for electronic components - 3DD205A silicon NPN case-rated transistors for high frequency amplification (Applicable for certification)
|
|
SJ/T 10969-1996
|
Detailed specifications for electronic components - 3DG2636 silicon NPN ambient-rated transistors for high frequency amplification (Applicable for certification)
|
|
SJ/T 10970-1996
|
Detailed specifications for electronic components - 3DG3077 silicon NPN ambient-rated transistors for high frequency amplification (Applicable for certification)
|
|
SJ/T 10971-1996
|
Detailed specifications for electronic components - 3DD204 silicon NPN case-rated transistors for low frequency amplification (Applicable for certification)
|
|
SJ/T 10972-1996
|
Detailed specifications for electronic components - 3DD207 silicon NPN case-rated transistors for low frequency amplification (Applicable for certification)
|
|
SJ/T 10973-1996
|
Detailed specifications for electronic components - 3DD200 bipolar transistors for silicon NPN low frequency amplification case (Applicable for certification)
|
|
SJ/T 10974-1996
|
Detailed specifications for electronic components - 3DD325 silicon NPN ambient-rated transistors for low frequency amplification (Applicable for certification)
|
|
SJ/T 10975-1996
|
Detailed specifications for electronic components - 3CG1825 silicon NPN ambient-rated transistors for high frequency amplification (Applicable for certification)
|
|
SJ/T 10976-1996
|
Detailed specifications for electronic components - QL62 silicon single phase bridge rectifiers (Applicable for certification)
|
|
SJ/T 10977-1996
|
Detailed specifications for electronic components - 2CK111, 2CK112 and 2CK113 silicon switching diodes (Applicable for certification)
|
|
SJ/T 10978-1996
|
Detailed specifications for electronic components - 2CC21 and 2CC26 silicon tuning variable capacitance diodes (Applicable for certification)
|
|
SJ/T 10979-1996
|
Detailed specifications for electronic components - 2CC22 and 2CC27 silicon tuning variable capacitance diodes (Applicable for certification)
|
|
SJ/T 10980-1996
|
Detailed specifications for electronic components - 2CC23 and 2CC28 silicon tuning variable capacitance diodes (Applicable for certification)
|
|
SJ/T 10981-1996
|
Detailed specifications for electronic components - 2CC24 and 2CC29 silicon tuning variable capacitance diodes (Applicable for certification)
|
|
SJ/T 10982-1996
|
Detailed specifications for electronic components -2CC25 and 2CC30 silicon band variable capacitance diodes (Applicable for certification)
|
|
SJ/T 10983-1996
|
Detail Specification of DC2 type flat cable connector
|
|
SJ/T 10984-1996
|
Detail specification for electronic components Type CA fixed tantalum capactors with solid electrolyte
|
|
SJ/T 10984-2016
|
(Electronic Component Detail specification CA-type solid electrolyte tantalum capacitors - Assessment level E)
|
|
SJ/T 10985-1996
|
Methods for the designation of electrostatic deflecting electrodes of cathode-ray tubes
|
|
SJ/T 10986-1996
|
Detailed specifications for electronic components - Semiconductor TV integrated circuits - CD5250CP SIF amplifiers
|
|
SJ/T 10987-1996
|
Detailed specifications for electronic components - Semiconductor TV integrated circuits - CD5435CP magnetic field sweep circuits
|
|
SJ/T 10988-1996
|
Detailed specifications for electronic components - Semiconductor TV integrated circuits - CD5132CP PIF amplifying circuits
|
|
SJ/T 10989-1996
|
Detailed specifications for electronic components - Semiconductor TV integrated circuits - CD5622CP PAL system chrominance signal processing circuits
|
|
SJ/T 10990-1996
|
Detailed specifications for electronic components - Semiconductor TV integrated circuits - CD5612CP Picture chrominance signal processing circuits
|
|
SJ/T 10991-1996
|
Detailed specifications for electronic components - Semiconductor integrated circuits - CW574CS voltage regulators for electronic tuners
|
|
SJ/T 10992-1996
|
Detailed specifications for electronic components - 2CW412-473 voltage-regulating diodes (Applicable for certification)
|
|
SJ/T 10993-1996
|
Detailed specifications for electronic components - 2CW380-411 voltage-regulating diodes (Applicable for certification)
|
|
SJ/T 10994-1996
|
Detail specification for electronic components High Voltage ceramic capacitors type CC81 Assessment level E
|
|
SJ/T 10995-1996
|
Detail specification for electronic components High Voltage ceramic capacitors type CT81 Assessment level E
|
|
SJ/T 10996-1996
|
Detail specification for electronic components. Type CD288 fixed aluminium electrolyte capacitors (Applicable for certification)
|
|
SJ/T 10997-1996
|
Detail specification for electronic components. Type CD289 fixed aluminium electrolyte capacitors
|
|
SJ/T 10998-1996
|
Detail specification for Electronic component Fixed polypropylene film dielectric metal foil D.C capacitors, type CBB13 Assessment level E
|
|
SJ/T 10999-1996
|
Detail specification for electronic components. Type CD30 fixed aluminium electrolyte capacitors (Applicable for certification)
|
|
SJ/T 11000-1996
|
Detail specification for electronic components. Type CD110 fixed aluminium electrolyte capacitors (Applicable for certification)
|
|
SJ/T 11001-1996
|
Detail specification for electronic components. Type CD291, CD292 and CD293 fixed aluminium electrolyte capacitors (Applicable for certification)
|
|
SJ/T 11002-1996
|
Detail specification for Electronic component fixed polypropylene film dielectric metal foil D.C capacitors, type CBB111 Assessment level E
|
|
SJ/T 11003-1996
|
Detailed specifications for electronic components - Semiconductor integrated circuits - CB14433 31/2-bit A/D converters (Applicable for certification)
|
|
SJ/T 11004-1996
|
Semiconductor TV integrated circuits - General principles of measuring methods for picture channel circuits
|
|
SJ/T 11005-1996
|
Semiconductor TV integrated circuits - General principles of measuring methods for audio channel circuits
|
|
SJ/T 11006-1996
|
Semiconductor TV integrated circuits - General principles of measuring methods for horizontal and vertical sweep circuits
|
|
SJ/T 11007-1996
|
Semiconductor TV integrated circuits - General principles of measuring methods for video signal and chrominance signal processing circuits
|
|
SJ/T 11008-1996
|
Detailed specifications for electronic components - Semiconductor TV integrated circuits - CD11235CP line and field sweep circuits
|
|
SJ/T 11009-1996
|
Detailed specifications for electronic components - Semiconductor TV integrated circuits - CD11215ACP PIF amplifying circuits
|
|
SJ/T 11010-1996
|
Detailed specifications for electronic components - Semiconductor TV integrated circuits - CD1124ACP SIF amplifying circuits
|
|
SJ/T 11011-1996
|
Analytical methods for pure silver brazing for electron device. Determination of lead by dithizone spectrophotometry
|
|
SJ/T 11011-2015
|
(Electronics ICP-AES test method silver brazing filler metal impurity content of lead, bismuth, zinc, cadmium, iron, magnesium, aluminum, tin, antimony, phosphorus)
|
|
SJ/T 11012-1996
|
Analytical methods for pure silver brazing for electron device Determination of magnesium and zinc by atomic absorption spectrophotometry
|
|
SJ/T 11013-1996
|
Analytical methods for pure silver brazing for electron device Determination of cadmium by atomic absorption spectrophotometry
|
|
SJ/T 11014-1996
|
Analytical methods for pure silver brazing for electron device Determination of antimony by malachite green spectrophotometry
|
|
SJ/T 11015-1996
|
Analytical methods for pure silver brazing for electron device Determination of iron by O-phenanthroline Spectrophotometry
|
|
SJ/T 11016-1996
|
Analytical methods for pure silver brazing for electron device Determination of bismuth by strychnine-potassium iodide spectrophotometry
|
|
SJ/T 11017-1996
|
Analytical methods for pure silver brazing for electron device Determination of phosphorus by phosphorimetry
|
|
SJ/T 11018-1996
|
Analytical methods for pure silver brazing for electron device Determination of sulfur by combustion-iodimetry
|
|
SJ/T 11018-2016
|
Analytical methods for pure silver brazing for electron device Determination of sulphur by combustion-iodimetry
|
|
SJ/T 11019-1996
|
Analytical methods for pure silver brazing for electron device Determination of Pb, Bi, Zn, Cd, Fe, Mg, Al, Sn and Sb by spectrochemical analysis
|
|
SJ/T 11020-1996
|
Analytical methods for silver copper brazing for electron device Determination of copper by iodimetry
|
|
SJ/T 11021-1996
|
Analytical methods for silver copper brazing for electron device Determination of Pb, Bi, Zn, Cd, Fe, Mg, Al, Sn and Sb by spectrochemical analysis
|
|
SJ/T 11022-1996
|
Analytical methods for silver copper brazing for electron device Determination of tin by C21H38BrN-absorption spectrophotometry
|
|
SJ/T 11023-1996
|
Analytical methods for silver copper brazing for electron device Determination of bismuth by atomic absorption spectrophotometry
|
|
SJ/T 11024-1996
|
Analytical methods for silver copper brazing for electron device Determination of antimony by atomic absorption spectrophotometry
|
|
SJ/T 11025-1996
|
Analytical methods for silver copper brazing for electron device Determination of lead by atomic absorption spectrophotometry
|
|
SJ/T 11026-1996
|
Analytical methods for silver copper brazing for electron device Determination of iron, cadmium and zinc by atomic absorption spectrophotometry
|
|
SJ/T 11027-1996
|
Analytical methods for silver copper brazing for electron device Determination of magnesium by atomic absorption spectrophotometry
|
|
SJ/T 11028-1996
|
Analytical methods for gold copper brazing for electron device Determination of copper by EDTA volumetry
|
|
SJ/T 11028-2015
|
(Determination of copper with gold and copper electronics solder analysis EDTA volumetric method)
|
|
SJ/T 11029-1996
|
Analytical methods for gold nickel brazing for electron device Determination of copper by EDTA volumetry
|
|
SJ/T 11029-2015
|
(Electronics determination of nickel with gold Nickel solder analysis EDTA volumetric method)
|
|
SJ/T 11030-1996
|
Analytical methods for gold copper and gold nickel brazing for electron device Determination of lead by dithizone spectrophotometry
|
|
SJ/T 11030-2015
|
(Electronic devices with gilt bronze and gold-nickel brazing filler metal impurities of lead, zinc, phosphorus ICP-AES determination)
|
|
SJ/T 11031-1996
|
Analytical methods for gold copper and gold nickel brazing for electron device Determination of phosphorus by phosphorimetry
|
|
SJ/T 11032-1996
|
Analytical methods for gold copper and gold nickel brazing for electron device Determination of zinc by atomic absorption spectrophotometry
|
|
SJ/T 11033-1996
|
Test method for density of electronic glass by the sink -- float comparator
|
|
SJ/T 11034-1996
|
Test method for d-c disruptive strength of electronic glass
|
|
SJ/T 11035-1996
|
Test method for chemical stability to resist water of electronic glass
|
|
SJ/T 11036-1996
|
Test method for average linear thermal expansion of electronic glass
|
|
SJ/T 11037-1996
|
Test method for thermal shock of electronic glass
|
|
SJ/T 11038-1996
|
Test method for softening point of electronic glass
|
|
SJ/T 11039-1996
|
Test method for annealing point and strain point of electronic glass
|
|
SJ/T 11040-1996
|
Test method for viscosity of electronic glass while high temperature
|
|
SJ/T 11041-1996
|
Test method for impact resistance strength of electronic glass
|
|
SJ/T 11042-1996
|
Test method for temperature (Tk-100) while volume resistivity of electronic glass is 100MΩ·cm
|
|
SJ/T 11043-1996
|
Test method for high frequency dielectric losses and dielectric constant of electronic glass
|
|
SJ/T 11044-1996
|
Detailed specifications for electronic components - UYF10 magnetic oxide cores - Assessment level A (Applicable for certification)
|
|
SJ/T 11045-1996
|
Type designation system for lithium batteries
|
|
SJ/T 11046-1996
|
Lithium-iodine battery for cardiac pacemaker
|
|
SJ/T 11047-1996
|
Detailed specifications for electronic components - CB14 fixed polystyrene film dielectric metal foil DC capacitors - Assessment level E (Applicable for certification)
|
|
SJ/T 11048-1996
|
Detailed specifications for electronic components - Varistors for surge suppression - MYG1 varistors for over-voltage protection - Assessment level E (Applicable for certification)
|
|
SJ/T 11049-1996
|
Motors for recorders, Permanent magnet D. C. --General specification for
|
|
SJ/T 11049-2001
|
Motors for recorders, permanent magnet D. C., general specification for
|
|
SJ/T 11050-1996
|
Prepreg materials for bonding sheets in the fabrication of multilayer printed boards
|
|
SJ/T 11050-2014
|
(Multilayer Printed epoxy prepreg fiberglass cloth adhesive sheet)
|
|
SJ/T 11051-1996
|
Specifications for printed boards for TV broadcast receivers
|
|
SJ/T 11052-1996
|
Detailed specifications for electronic components - 3DG162 ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification)
|
|
SJ/T 11053-1996
|
Detailed specifications for electronic components - 3DG182 ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification)
|
|
SJ/T 11054-1996
|
Detailed specifications for electronic components - 3DG140 ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification)
|
|
SJ/T 11055-1996
|
Detailed specifications for electronic components - 4CS119 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification)
|