YS/T 719-2009 English PDF

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YS/T 719-2009: Flat magneting sputtering target. Silicon target for optical coating

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
YS/T 719-2009	209	Add to Cart	3 days	Flat magneting sputtering target. Silicon target for optical coating

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Basic data

Standard ID: YS/T 719-2009 (YS/T719-2009)
Description (Translated English): Flat magneting sputtering target. Silicon target for optical coating
Sector / Industry: Nonferrous Metallurgy Industry Standard (Recommended)
Classification of Chinese Standard: H63
Classification of International Standard: 77.150.99
Word Count Estimation: 6,628
Date of Issue: 2009-12-04
Date of Implementation: 2010-06-01
Quoted Standard: GB/T 1551; GB/T 2040; GB/T 5121; GB/T 5231; GB/T 12963
Regulation (derived from): MIIT [2009] No. 66
Issuing agency(ies): Ministry of Industry and Information Technology
Summary: This standard specifies the planar magnetron sputtering target of optical thin film silicon requirements, test methods, inspection rules, marking, packaging, transportation, storage and purchase order (or contract) content. This standard applies to planar magnetron sputtering optical thin film silicon target.

YS/T 719-2009: Flat magneting sputtering target. Silicon target for optical coating

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Flat magneting sputtering target.Silicon target for optical coating ICS 77.150.99 H63 People's Republic of China Nonferrous Metals Industry Standard Planar magnetron sputtering target Optical thin film silicon target Posted 2009-12-04 2010-06-01 implementation Ministry of Industry and Information Technology of the People's Republic of China released

Foreword

This standard by the National Standardization Technical Committee of non-ferrous metals and centralized. This standard is drafted by. Lida Optical Company. The main drafters of this standard. WORKING Yangtai Li, Fu Yong, Duan Yuling, Zhang Xiangdong, Zhao Lun. Planar magnetron sputtering target Optical thin film silicon target

1 Scope

This standard specifies the optical thin film planar magnetron sputtering using a silicon target requirements, test methods, inspection rules, marking, packaging, transportation and storage And purchase order (or contract) content. This standard applies to planar magnetron sputter optical film silicon target.

2 Normative references

The following documents contain provisions which, through reference in this standard and become the standard terms. For dated references, subsequent Amendments (not including errata content) or revisions do not apply to this standard, however, encourage the parties to the agreement are based on research Whether the latest versions of these documents. For undated reference documents, the latest versions apply to this standard. GB/T 1551 silicon and germanium two probe method for measuring resistivity DC GB/T 2040 copper and copper alloy sheet GB/T 5121 (all parts) of copper and copper alloys - GB/T 5231 Wrought copper and copper alloy chemical composition and shape of the product GB/T 12963 polycrystalline silicon

3 Terms and Definitions

The following terms and definitions apply to this standard. The percentage of the actual area to be joined junction area between the silicon plate and the backplate account.

4 Requirements

4.1 Material Copper (back) and a silicon plate. 4.2 Chemical composition Chemical composition of the silicon plate by supply and demand sides agreed; copper grades and chemical composition in line with GB/T 5231 regulations. 4.3 size of the target and tolerance Target size and tolerance negotiated by both parties shall comply with the technical drawings signed by both parties. 4.4 surface conditions Target surface roughness and flatness negotiated by both parties. 4.5 appearance quality Copper and silicon plate appearance quality should conform to GB T 12963 and GB/T 2040 requirements /. 4.6 Resistivity Resistivity silicon plate should be (0.005 ~ 0.05) μΩ · cm. 4.7 Lap rate A silicon plate and a copper plate not less than 95% overlap, in which a single bad contact area of the region should be not more than 2.5% of the area of overlap. ......

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