YS/T 26-2016 English PDF

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YS/T 26-2016: Test methods for edge contour of silicon wafers

YS/T 26: Historical versions

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
YS/T 26-2016	349	Add to Cart	3 days	Test methods for edge contour of silicon wafers
YS/T 26-1992	199	Add to Cart	2 days	Test method for silicon wafer edge	Obsolete

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GB/T 1425   YS/T 273.1   GB/T 351   YS/T 581.15   YS/T 23   YS/T 15   

Basic data

Standard ID: YS/T 26-2016 (YS/T26-2016)
Description (Translated English): Test methods for edge contour of silicon wafers
Sector / Industry: Nonferrous Metallurgy Industry Standard (Recommended)
Classification of Chinese Standard: H21
Classification of International Standard: 29.045
Word Count Estimation: 10,169
Date of Issue: 2016-07-11
Date of Implementation: 2017-01-01
Older Standard (superseded by this standard): YS/T 26-1992
Regulation (derived from): Notice of the Ministry of Industry and Information Technology (2016 No. 37)
Issuing agency(ies): Ministry of Industry and Information Technology
Summary: This standard specifies the inspection method for the edge profile of the wafer (including the slit).

YS/T 26-2016: Test methods for edge contour of silicon wafers

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test methods for edge contour of silicon wafers ICS 77.040 H21 People's Republic of China Nonferrous Metals Industry Standard Replacing YS/T 26-1992 Wafer edge contour inspection method Released on.2016-07-11 2017-01-01 implementation Ministry of Industry and Information Technology of the People's Republic of China

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard replaces YS/T 26-1992 "Method for Inspection of Wafer Edge Profiles". Major changes in this standard compared to YS/T 26-1992 as follows. --- Increased normative references, terms and definitions, interference factors, etc.; --- Added non-destructive testing method B, method C. This standard is proposed and managed by the National Nonferrous Metals Standardization Technical Committee (SAC/TC243). This standard was drafted. Luoyang Monocrystalline Silicon Group Co., Ltd., Yanyan Semiconductor Materials Co., Ltd., Zhejiang Jinrui Technology Co., Ltd. Limited. The main drafters of this standard. Tian Suxia, Li Zhanguo, Miao Ligang, Jiao Erqiang, An Ruiyang, Shao Chengbo, Wang Wenwei. The previous versions of the standards replaced by this standard are. ---YS/T 26-1992. Wafer edge contour inspection method

1 Scope

This standard specifies the inspection method for the edge profile of the wafer (including the slit). This standard is applicable to the inspection of the edge profile of the chamfered silicon wafer (including the slit). The inspection of the edge profile of other materials such as gallium arsenide can be used. Execute according to this standard.

2 Normative references

The following documents are indispensable for the application of this document. For dated references, only the dated version applies to this article. Pieces. For undated references, the latest edition (including all amendments) applies to this document. GB/T 14264 semiconductor material terminology

3 Terms and definitions

The terms and definitions defined in GB/T 14264 apply to this document.

4 Method summary

This standard specifies three test methods A, B, and C. The test principles are as follows. a) Method A. forming a section along the radial direction of the silicon wafer, forming an edge region of the silicon wafer by means of an optical comparator or a projection microscope The profile is focused on the graph and the graph is compared to the edge profile template plot to determine if the edge profile is acceptable. This method is destructive The inspection of discrete points on the circumference, including the reference surface, is often used for the chamfered edge of the silicon reference surface with a diameter of not more than 150 mm. Detection of contours; b) Method B. Place the silicon wafer under a parallel light path, the edge of the silicon wafer is projected onto the display, and the image of the edge contour and the edge contour mode Compare the plate coordinates to determine if the edge profile is acceptable. The method is non-destructive and can be used to inspect silicon in addition to the reference surface and the incision. All the points on the contour of the sheet are often used for the detection of the silicon wafer except the reference surface and the outer edge contour of the slit. c) Method C. Place the silicon wafer under the light source, the light source is on the edge of the silicon wafer, and the CCD camera will cut the edge of the silicon wafer (excluding the reference surface) or cut The image of the contour shape of the mouth is imported into the computer, and the detected image is analyzed by a dedicated analysis software, and then the contour shape is plotted. The image and test results are displayed on the display. The test principle is shown in Figure 1. The method is non-contact, non-destructive and can be measured The outline shape of the edge of the wafer and the slit are tested, and the outline size can be measured. The method is simple and convenient to operate and can be determined intuitively. The wafer edge and slit are suitable for the inspection of wafer edge profiles of various sizes, angles and shapes. This method is applicable For daily process monitoring, such as commissioning of chamfering machines, daily quality control and purchase, factory inspection, etc. ......

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