YS/T 15-2015 English PDF

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YS/T 15-2015: Test method for thickness of epitaxial layers and diffused layers by angle lap stain
Status: Valid

YS/T 15: Historical versions

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
YS/T 15-2015	139	Add to Cart	3 days	Test method for thickness of epitaxial layers and diffused layers by angle lap stain	Valid
YS/T 15-1991	239	Add to Cart	2 days	Thcikness determination for silicon epitaxial layer and difussion layer - Angle lap-stain method	Obsolete

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GB/T 1425   YS/T 273.1   GB/T 351   YS/T 581.3   YS/T 581.15   YS/T 23   

Basic data

Standard ID: YS/T 15-2015 (YS/T15-2015)
Description (Translated English): Test method for thickness of epitaxial layers and diffused layers by angle lap stain
Sector / Industry: Nonferrous Metallurgy Industry Standard (Recommended)
Classification of Chinese Standard: H21
Classification of International Standard: 77.04
Word Count Estimation: 6,663
Date of Issue: 2015-04-30
Date of Implementation: 2015-10-01
Older Standard (superseded by this standard): YS/T 15-1991
Quoted Standard: GB/T 1550; GB/T 6617-2009; GB/T 14146; GB/T 14264; GB/T 14847
Regulation (derived from): Ministry of Industry and Information Technology Announcement (2015 No. 28)
Issuing agency(ies): Ministry of Industry and Information Technology
Summary: This Standard specifies the determination of silicon epitaxial layer and the diffusion layer thickness Bevelers staining. This Standard applies to the epitaxial layer and the substrate conductivity type diffusion layer or two layers of different resistivity measured by at least one order of magnitude any resistivity silicon epitaxial layer and the diffusion layer thickness measurement range of 1 ��m ~ 100 ��m.

YS/T 15-2015: Test method for thickness of epitaxial layers and diffused layers by angle lap stain

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(Silicon epitaxial layer and the diffusion layer thickness measurement angle grinding staining) ICS 77.040 H21 People's Republic of China Nonferrous Metals Industry Standard Replacing YS/T 15-1991 Silicon epitaxial layer and the diffusion layer thickness measurement Bevelers staining byanglelapstain Issued on. 2015-04-30 2015-10-01 implementation Ministry of Industry and Information Technology of the People's Republic of China released

Foreword

This standard was drafted in accordance with GB/T 1.1-2009 given rules. Instead of the standard YS/T 15-1991 "silicon epitaxial layer and the diffusion layer thickness measurement Bevelers staining." This standard YS/T 15-1991 "determination of silicon epitaxial layer and the diffusion layer thickness Bevelers staining" compared to the main changes are as follows. Measuring range --- original "1μm ~ 25μm" to "1μm ~ 100μm"; --- Normative references added GB/T 6617, GB/T 14146, GB/T 14264, GB/T 14847; --- Increasing the terms and definitions, disturbances; --- Method summary with microscopic image processing technology instead of the interference fringe computing Layer Thickness; --- "Reagents and Materials" Remove reagents and materials related to the interference fringes law; --- Deleted the original 2, increasing the bevel schematic; --- Modify the calculation and measurement procedures measurement results; --- Redefined precision. This standard by the national non-ferrous metals Standardization Technical Committee (SAC/TC243) and focal points. This standard was drafted. Nanjing Guosheng Electronics Co., have research New Material Co., Ltd. Shanghai Jing League silicon material. The main drafters of this standard. Marin treasure, Yang Fan, Ge Hua, Sun Yan, Xu Xinhua. This standard replaces the standards previously issued as follows. --- YS/T 15-1991. Silicon epitaxial layer and the diffusion layer thickness measurement Bevelers staining

1 Scope

This standard specifies the determination of silicon epitaxial layer and the diffusion layer thickness Bevelers staining. This standard applies to the epitaxial layer and a diffusion layer and a conductive substrate, or two different types of electrical resistivity by at least an order of magnitude of any resistance Silicon epitaxial layer and the diffusion layer thickness measurement rate measurement range of 1μm ~ 100μm.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein Member. For undated references, the latest edition (including any amendments) applies to this document. GB/T 1550 extrinsic conductivity type semiconductor material testing methods GB/T 6617-2009 measuring resistivity silicon spreading resistance probe GB/T 14146 silicon epitaxial layer carrier concentration - Mercury probe capacitance - voltage method GB/T 14264 semiconductor material terms GB/T 14847 lightly doped silicon epitaxial layer on the substrate thickness infrared reflectance measurements heavily doped

3 Terms and Definitions

Terms and definitions GB/T 14264 apply to this document defined.

4 Method summary

The sample was milled to obtain a small angle to the original surface slope, by staining revealed the interface between the layers on an incline. Image processing technology using a microscope to read thin ramp length is calculated according to the length of the thin layer thickness ramps.

5 disturbances

5.1 After dyeing blur the boundary between layers will affect the accuracy of the results. 5.2 9.3 difference operation will bring the measurement results on the computer screen image when the value of. Fig. 3 AB line should be perpendicular to the dividing line between the layers after dyeing, otherwise it will increase the measurement error when measuring 5.3.

6 Reagents and materials

6.1 hydrofluoric acid. (ρ = 1.15g/mL) AR. 6.2 Hydrogen peroxide (37), AR. 6.3 High water. resistivity greater than 2MΩ · cm (25 ℃). 6.4 etching solution. the hydrofluoric acid (6.1) and hydrogen peroxide (6.2) uniformly by 2.1 volume ratio. ......

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