YS/T 23-2016 English PDF

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YS/T 23-2016: Test method for thickness of epitaxial layers - Stacking fault size
Status: Valid

YS/T 23: Historical versions

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
YS/T 23-2016	169	Add to Cart	3 days	Test method for thickness of epitaxial layers - Stacking fault size	Valid
YS/T 23-1992	199	Add to Cart	2 days	Thickness determination for silicon epitaxial layers - Stacking fault method	Obsolete

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GB/T 1425   YS/T 273.1   GB/T 351   YS/T 581.3   YS/T 581.15   YS/T 15   

Basic data

Standard ID: YS/T 23-2016 (YS/T23-2016)
Description (Translated English): Test method for thickness of epitaxial layers - Stacking fault size
Sector / Industry: Nonferrous Metallurgy Industry Standard (Recommended)
Classification of Chinese Standard: H21
Classification of International Standard: 29.045
Word Count Estimation: 7,751
Date of Issue: 2016-04-05
Date of Implementation: 2016-09-01
Older Standard (superseded by this standard): YS/T 23-1992
Regulation (derived from): The Ministry of Industry and Notice No. 2016 in 2016; the industry standard for the record 2016 No. 6
Issuing agency(ies): Ministry of Industry and Information Technology
Summary: This standard specifies methods for measuring the thickness of silicon epitaxial layers using the stacking fault size method.

YS/T 23-2016: Test method for thickness of epitaxial layers - Stacking fault size

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test method for thickness of epitaxial layers-Stacking fault size ICS 77.040 H21 People's Republic of China non-ferrous metal industry standards Replacing YS/T 23-1992 Determination of silicon epitaxial layer thickness - Stacking fault size method 2016-04-05 release 2016-09-01 implementation Ministry of Industry and Information Technology of the People's Republic of China

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard replaces YS/T 23-1992 "silicon epitaxial layer thickness measurement stacking fault size method." This standard and YS/T 23-1992 phase Than the main changes are as follows. --- Added "Terms and definitions" "Interference factor" (see Chapter 3, Chapter 5); --- Remove non-destructive testing methods; --- In Chapter 6 added chromium-free etching solution B preparation (see 6.9); --- Modify the microscope in Chapter 7 measuring instruments and remove the micrometer; --- In Chapter 8 added a sample preparation two (see 8.3); --- Modify the Chapter 9 measurement steps; --- Modify the measurement results of the calculation formula, with the results of microscopy image processing instead of side length calculation; --- Increasing the relationship between the epitaxial layer thickness T and the stacking fault pattern edge length L (see Appendix A). This standard is proposed and managed by the National Nonferrous Metal Standardization Technical Committee (SAC/TC243). This standard was drafted unit. Nanjing Guosheng Electronics Co., Ltd., research Semiconductor Materials Co., Ltd., Shanghai Crystal Alliance Silicon Materials Co., Ltd.. The main drafters of this standard. Marin Bao, Yang Fan, Ge Hua, Liu Xiaoqing, Sun Yan, Xu Xinhua. This standard replaces the standards previously issued as. --- YS/T 23-1992. Determination of silicon epitaxial layer thickness - Stacking fault size method

1 Scope

This standard specifies the method of measuring the thickness of silicon epitaxial layer using stacking fault size method. This standard applies to < 111>, < 100> and < 110> grown on a silicon single crystal substrate 2μm ~ 120μm silicon epitaxial layer thickness measuring.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version applies to this article Pieces. For undated references, the latest edition (including all amendments) applies to this document. GB/T 14264 semiconductor materials terminology GB/T 14847 heavily doped substrate with lightly doped silicon epitaxial layer thickness of the infrared reflection measurement method

3 Terms and definitions

GB/T 14264 defined terms and definitions apply to this document.

4 method summary

Epitaxial layer exists in the growth of a complete stacking fault, the chemical corrosion can be observed using an interference microscope. At < 111>, < 100>, < 110> Among the three kinds of epitaxial layers grown on a silicon substrate with a low index crystal orientation, fully grown stacking faults appear to be respectively closed on the surface of the epitaxial layer Isometric triangles, squares and isosceles triangles. Due to the fact that the silicon single crystal substrate has a certain crystal orientation deviation, the actually observed stacking fault figure Shape will be slightly deformed. For the three kinds of epitaxial wafers with low index, the relation between the thickness T of the epitaxial layer and the length L of the stacking fault pattern See Appendix A for details. Table 1 the thickness of the epitaxial layer T and the stacking layer staggered graphics edge length L relationship Substrate orientation < 111> < 100> < 110> Staggered graphics Isometric Triangle Square Isosceles triangle T and L relationship T = 0.816LT = 0.707LT = 0.577L

5 Interference factors

5.1 corrosive liquid placed too long, there is volatility, precipitation phenomenon, affecting the corrosion effect. ......

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