YS/T 14-2015 English PDF

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YS/T 14-2015: Test method for thickness of heteroepitaxy layers and polycrystalline layers

YS/T 14: Historical versions

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
YS/T 14-2015	249	Add to Cart	3 days	Test method for thickness of heteroepitaxy layers and polycrystalline layers
YS/T 14-1991	199	Add to Cart	2 days	(Measurement heteroepitaxial layer and the polycrystalline silicon layer thickness)	Obsolete

Similar standards

GB/T 1425   YS/T 273.1   GB/T 351   YS/T 581.15   YS/T 23   YS/T 15   

Basic data

Standard ID: YS/T 14-2015 (YS/T14-2015)
Description (Translated English): Test method for thickness of heteroepitaxy layers and polycrystalline layers
Sector / Industry: Nonferrous Metallurgy Industry Standard (Recommended)
Classification of Chinese Standard: H21
Classification of International Standard: 77.04
Word Count Estimation: 7,742
Date of Issue: 2015-04-30
Date of Implementation: 2015-10-01
Older Standard (superseded by this standard): YS/T 14-1991
Quoted Standard: GB/T 6617; GB/T 14264; GB/T 14847
Regulation (derived from): Ministry of Industry and Information Technology Announcement (2015 No. 28)
Issuing agency(ies): Ministry of Industry and Information Technology
Summary: This standard specifies a method for measuring the thickness of a heteroepitaxial layer and a silicon polycrystal layer. This standard is applicable to the measurement of the thickness of the heteroepitaxial layer and the silicon polycrystal layer with the thickness of 100nm between the substrate and the deposited layer. The measurement range is 1��m ~ 100��m.

YS/T 14-2015: Test method for thickness of heteroepitaxy layers and polycrystalline layers

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test method for thickness of heteroepit layers layers and polycrystalline layers ICS 77.040 H21 People's Republic of China Nonferrous Metals Industry Standard Replacing YS/T 14-1991 Heteroepitaxial layer and silicon polycrystalline layer thickness measurement method 2015-04-30 released 2015-10-01 implementation Issued by the Ministry of Industry and Information Technology of the People's Republic of China

Foreword

This standard is drafted in accordance with the rules given in GB/T 1.1-2009. This standard replaces YS/T 14-1991 "Method for measuring the thickness of heteroepitaxial layers and silicon polycrystalline layers". This standard and YS/T 14-1991 "heteroepitaxial layer and silicon polycrystalline layer thickness measurement method" compared to the main changes are as follows. --- measuring range from 1μm ~ 20μm to 1μm ~ 100μm; - Added normative references to documents and interference factors; - Method summary in the use of surface step meter to measure the height of the bench instead of surface finish measuring height; --- modified the sample preparation process, measurement steps and Figure 1, Figure 2; --- recalculate the precision. This standard is proposed by the National Committee for Standardization of Nonferrous Metals (SAC/TC243). The drafting of this standard. Nanjing Guosheng Electronics Co., Ltd., a new research materials Co., Ltd., Shanghai Crystal Union Silicon Materials Co., Ltd.. The main drafters of this standard. Ma Linbao, Yang Fan, Ge Hua, Liu Xiaoqing, Sun Yan, Xu Xinhua. This standard replaced the previous version of the standard release. --- YS/T 14-1991. Heteroepitaxial layer and silicon polycrystalline layer thickness measurement method

1 Scope

This standard specifies the measurement method for the thickness of the heteroepitaxial layer and the silicon polycrystalline layer. This standard is applicable to measuring the thickness of the heteroepitaxial layer and the silicon polycrystalline layer with an interface layer thickness between the substrate and the deposited layer of less than 100 nm, The measurement range is 1μm ~ 100μm.

2 normative reference documents

The following documents are indispensable for the application of this document. For dated references, only the dated edition applies to this article Pieces. For undated references, the latest edition (including all modifications) applies to this document. GB/T 6617 Wafer resistivity determination Extended resistance probe method GB/T 14264 terminology for semiconductor materials Measurement of Infrared Reflectance of Light - Doped Silicon Epitaxial Layer on heavily Doped Substrates

3 terms and definitions

GB/T 14264 The terms and definitions defined apply to this document.

4 method summary

In the surface of the test sample, in addition to leaving a certain measurement area outside all the wax hiding, the reserved area of the measured layer corrosion, the formation of A step. The thickness of the heteroepitaxial layer or the silicon polycrystalline layer can be obtained by removing the mask wax and measuring the height of the step with a surface step meter.

5 interference factors

5.1 Ambient temperature and humidity, instrument vibration will affect the measurement results. 5.2 The finish after surface treatment of the specimen will affect the measurement trajectory. 5.3 The unevenness of the two measuring trajectories will affect the measurement accuracy.

6 reagents and materials

6.1 hydrofluoric acid. ρ = 1.15 g/mL, analytical grade. 6.2 nitric acid. ρ = 1.42g/mL, analytical grade. 6.3 high purity water. resistivity greater than 2MΩ · cm (25 ℃). 6.4 Trichlorethylene. Analytical purity. 6.5 anhydrous ethanol. analytical grade. 6.6 Chemical etching agent A. A mixture of hydrofluoric acid (6.1). nitric acid (6.2) = 1. 80. 6.7 Chemical etching agent B. hydrofluoric acid (6.1). nitric acid (6.2) = 1. 10 mixture. ......

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