JJF 1760-2019 English PDFUS$559.00 · In stock
Delivery: <= 5 days. True-PDF full-copy in English will be manually translated and delivered via email. JJF 1760-2019: Calibration Specification for Standard Slices of Single Crystal Silicon Resistivity Status: Valid
Basic dataStandard ID: JJF 1760-2019 (JJF1760-2019)Description (Translated English): Calibration Specification for Standard Slices of Single Crystal Silicon Resistivity Sector / Industry: Metrology & Measurement Industry Standard Classification of Chinese Standard: A56 Classification of International Standard: 17.220 Word Count Estimation: 24,265 Date of Issue: 2019 Date of Implementation: 2020-03-27 Issuing agency(ies): State Administration for Market Regulation JJF 1760-2019: Calibration Specification for Standard Slices of Single Crystal Silicon Resistivity---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order. Calibration Specification for Standard Slices of Single Crystal Silicon Resistivity National Measurement Technical Specification of the People's Republic of China Calibration Specification for Standard Sample of Silicon Single Crystal Resistivity 2019-09-27 release 2020-03-27 Implementation Issued by the State Administration of Market Supervision and Administration Standard sample of silicon single crystal resistivity Calibration specifications Replace JJG48-2004 Focal point. National Radio Measurement Technical Committee Main drafting unit. China Academy of Metrology Participated in the drafting unit. Fujian Institute of Metrology This specification is entrusted to the National Radio Measurement Technical Committee for interpretation The main drafters of this specification. Gao Ying (Chinese Academy of Metrology) Li Lanlan (Chinese Academy of Metrology) Participating drafters. Haiyan Luo (Fujian Institute of Metrology) Yang Aijun (Fujian Institute of Metrology) table of ContentsIntroduction (Ⅱ) 1 Scope (1) 2 References (1) 3 Terms and units of measurement (1) 3.1 Resistivity (1) 3.2 Thickness (1) 3.3 Diameter (1) 3.4 Sheet resistance (1) 3.5 Conductivity type (1) 3.6 Four probes (1) 3.7 Uniformity of local radial resistivity (1) 4 Overview (2) 5 Metrological characteristics (2) 5.1 Measuring range of standard sample resistivity (2) 5.2 The nominal value of the resistivity of the standard sample (2) 5.3 Parameters and performance requirements of standard samples (2) 6 Calibration conditions (3) 6.1 Environmental conditions (3) 6.2 Calibration equipment (3) 7 Calibration items and calibration methods (3) 7.1 Calibration items (3) 7.2 Visual inspection (4) 7.3 Determination of conductivity type (4) 7.4 Diameter measurement (4) 7.5 Thickness measurement (4) 7.6 Resistivity or sheet resistance measurement (5) 7.7 Local Radial Resistivity Uniformity Measurement (6) 8 Expression of calibration results (7) 9 Recalibration interval (7) Appendix A Original Record Format (8) Appendix B. Internal page format of the calibration certificate (10) Appendix C Examples of Uncertainty Evaluation of Calibration for Major Projects (11) Appendix D. Standard sample thickness correction coefficient table (16) Appendix E Standard Sample Diameter Correction Factor (17) Appendix F Standard Sample Resistivity Temperature Coefficient Table (18)IntroductionThis specification is based on JJF 1071-2010 "Rules for Compiling National Measurement and Calibration Specifications" and JJF 1059.1-2012 Compilation of "Measurement Uncertainty Evaluation and Representation". This specification replaces JJG48-2004 "Silicon Single Crystal Resistivity Standard Sample", compared with JJG48-2004, except In addition to the editorial changes, the main technical changes are as follows. --- Added introduction, cited documents, terminology and unit of measurement; --- Removed the level classification of silicon single crystal resistivity standard samples; --- Removed the cleaning method of silicon single crystal resistivity standard sample; --- Modified the measurement range of resistivity, changed from the original 0.005Ω · cm ~ 5000Ω · cm 0.003Ω · cm ~ 1000Ω · cm; --- Modified the calibration method of the silicon single crystal resistivity standard sample diameter; --- Modified the calibration method of silicon single crystal resistivity standard sample thickness; --- Modified the calibration method of the uniformity of the radial resistivity of the standard sample of silicon single crystal resistivity. Previous releases of this specification. --- JJG48-2004; --- JJG48-1990. Calibration Specification for Standard Sample of Silicon Single Crystal Resistivity1 ScopeThis specification applies to silicon single crystal resistivity standard samples with resistivity between 0.003Ω · cm ~ 1000Ω · cm Calibration.2 Reference documentsThis specification refers to the following documents. JJG508-2004 Four Probe Resistivity Tester GB/T 14264 Terminology of semiconductor materials For dated reference documents, only the dated version applies to this specification; for those without date references The latest version (including all amendments) is applicable to this specification.3 Terms and units of measurement3.1 Resistivity A measure of the degree to which a charged carrier is blocked by a material. Resistivity is the reciprocal of conductivity. Symbol is ρ, unit It is Ω · cm. 3.2 Thickness The distance through the wafer through a given point on the wafer perpendicular to the surface direction. Usually the thickness of the geometric center of the wafer Is the nominal thickness of the wafer. The unit is μm. 3.3 diameter The length of the line that traverses the surface of the wafer, passes the center point of the wafer, and does not intersect with the reference plane or other reference areas on the circumference degree. The unit is mm. 3.4 Sheet resistance The sheet resistance of a semiconductor or thin metal film, the potential gradient parallel to the current multiplied by the current density and thickness ratio. Also called square resistance. The symbol is Rs and the unit is Ω/□. 3.5 Conductivity type Conductive characteristics determined by the nature of most carriers in semiconductor materials. 3.6 Four-point probe A point probe device for measuring the resistivity of materials. One pair of probes is used to pass the current flowing through the sample, the other The probe measures the potential difference caused by the current. 3.7 Regional uniformity of radialresistivity The center point of the wafer and a number of symmetrically distributed set points (typical settings The change of resistivity between the radius of 5mm and the radius of 10mm from the center point is taken. Divide the maximum difference by medium Interval, expressed as a percentage. ......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of JJF 1760-2019_English be delivered?Answer: Upon your order, we will start to translate JJF 1760-2019_English as soon as possible, and keep you informed of the progress. The lead time is typically 3 ~ 5 working days. The lengthier the document the longer the lead time.Question 2: Can I share the purchased PDF of JJF 1760-2019_English with my colleagues?Answer: Yes. 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